APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

5 Nov 2012

Volume 101, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages)

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Surface acoustic wave nebulization on nanocrystalline ZnO film

Y. Q. Fu, Y. Li, C. Zhao, F. Placido, and A. J. Walton

Appl. Phys. Lett. 101, 194101 (2012); http://dx.doi.org/10.1063/1.4767126 (3 pages) | Cited 1 time

Online Publication Date: 8 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Surface acoustic wave (SAW) nebulization/atomization has been realised on thin ZnO film based SAW devices. The surface acoustic wave nebulization (SAWN) process has been observed to produce significant mist generation and ejected satellite droplets. By modifying the geometry of the interdigitated transducers to reduce the wavelengths from 400 μm to 120 μm, higher frequency SAWN has been achieved by increasing radio frequency driving frequencies from 11.8 MHz to 37.2 MHz, respectively. Compared with the commonly used LiNbO3 SAWN devices, ZnO film devices exhibit better thermal dissipation, and to date, they have shown no susceptibility to substrate failure during fabrication or operation. They also have the added advantage of the technology being suitable for direct integration with microsystems and integrated circuit microelectronics.
Show PACS
43.38.Rh Surface acoustic wave transducers

Guided atom gyroscope on an atom chip with symmetrical state-dependent microwave potentials

Hui Yan

Appl. Phys. Lett. 101, 194102 (2012); http://dx.doi.org/10.1063/1.4766291 (4 pages)

Online Publication Date: 8 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We proposed to realize area-enclosed Raman-type atom interferometer on an atom chip based on the moving guide. Symmetrical state-dependent microwave potentials are applied to split and recombine the atoms with different internal states along the free-propagation direction of a magnetic guide, while the atoms are translated along another direction with the moving guide back and forth. For the long coherence time of the atom internal states and the moving guide scheme, compact and large area-enclosed atom gyroscope can be realized on an atom chip.
Show PACS
07.10.-h Mechanical instruments and equipment
85.65.+h Molecular electronic devices

Excited-state thermionic emission in III-antimonides: Low emittance ultrafast photocathodes

Joel A. Berger, B. L. Rickman, T. Li, A. W. Nicholls, and W. Andreas Schroeder

Appl. Phys. Lett. 101, 194103 (2012); http://dx.doi.org/10.1063/1.4766350 (4 pages)

Online Publication Date: 9 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The normalized rms transverse emittance of an electron source is shown to be proportional to math, where m* is the effective mass of the state from which the electron is emitted, by direct observation of the transverse momentum distribution for excited-state thermionic emission from two III-V semiconductor photocathodes, GaSb and InSb, together with a control experiment employing two-photon emission from gold. Simulations of the experiment using an extended analytical Gaussian model of electron pulse propagation are in close agreement with the data.
Show PACS
85.60.Ha Photomultipliers; phototubes and photocathodes
79.40.+z Thermionic emission

Effect of N2 dielectric barrier discharge treatment on the composition of very thin SiO2-like films deposited from hexamethyldisiloxane at atmospheric pressure

R. Reuter, N. Gherardi, and J. Benedikt

Appl. Phys. Lett. 101, 194104 (2012); http://dx.doi.org/10.1063/1.4764938 (3 pages)

Online Publication Date: 9 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The continuous deposition of thin SiO2-like films by means of a dielectric barrier discharge with helium or nitrogen gas with small admixture of hexamethyldisiloxane (HMDSO) has been compared to a layer-by-layer deposition process, in which a very thin (0.7 nm and 2.5 nm) films are deposited from HMDSO precursor and treated afterwards by a pure N2 dielectric barrier discharge (DBD). Presented results clearly show that a carbon-free SiO2-like films can be obtained in the latter process, even if the continuous deposition led to carbon-rich material. Surface reactions of N2-DBD generated excited species (metastables, ions, or possibly photons) with surface bonded carbon are responsible for this effect. Moreover, OH-free and oxidation-resistant films can be produced even at the room substrate temperature.
Show PACS
68.55.-a Thin film structure and morphology
78.66.Nk Insulators
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close