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5 Nov 2012

Volume 101, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages)

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett
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A little ribbing: Flux starvation engineering for rippled indium tin oxide nanotree branches

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett

Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages) | Cited 1 time

Online Publication Date: 5 November 2012

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Combining vapour-liquid-solid growth with glancing angle deposition (VLS-GLAD) facilitates fabrication of branched nanowires not possible with either technique alone. Indium tin oxide (ITO) nanostructures grown by VLS-GLAD produce extremely porous nanotree structures, where periodic branch diameter oscillations are sometimes observed. We explain this rippled branch growth with a simple model linking the physics governing branch growth to the process variables controlled in VLS-GLAD. The model is verified by inducing specific, aperiodic ripples onto growing ITO branches through macroscopic vapour flux control and manipulation of local shadowing.
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81.07.Bc Nanocrystalline materials
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.10.Bk Growth from vapor
61.43.Gt Powders, porous materials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Effects of laser irradiation on the self-assembly of MnAs nanoparticles in a GaAs matrix

Pham Nam Hai, Wataru Nomura, Takashi Yatsui, Motoichi Ohtsu, and Masaaki Tanaka

Appl. Phys. Lett. 101, 193102 (2012); http://dx.doi.org/10.1063/1.4765355 (4 pages)

Online Publication Date: 6 November 2012

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We investigate the effects of laser irradiation on the self-assembly of MnAs nanoparticles during solid-phase decomposition in a GaAs matrix. It is found that laser irradiation suppresses the growth of MnAs nanoparticles from small to large size, and that the median diameter D1 in the size distribution of small MnAs nanoparticles depends on the incident photon energy E following D1 ∼ E−1/5. We explain this behavior by the desorption of Mn atoms on the MnAs nanoparticle surface due to resonant optical absorption, in which incident photons excite intersubband electronic transitions between the quantized energy levels in the MnAs nanoparticles.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
81.16.Dn Self-assembly
68.43.Nr Desorption kinetics

Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: Importance of parasitic oxidation for third generation photovoltaic applications

A. M. Hartel, S. Gutsch, D. Hiller, C. Kübel, N. Zakharov, P. Werner, and M. Zacharias

Appl. Phys. Lett. 101, 193103 (2012); http://dx.doi.org/10.1063/1.4766284 (4 pages) | Cited 2 times

Online Publication Date: 7 November 2012

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We report on an in-situ oxidation effect during annealing of SiO2/SiO1.0N0.23 multilayers prepared by plasma enhanced chemical vapour deposition (PECVD). This in-situ oxidation leads to an undesired growth of the tunneling oxide and also affects the silicon nanocrystal (SiNC) size control, i.e., a NC shrinkage. The origin of this oxidation is identified to be a “quasi-wet” oxidation by O–H groups incorporated in the PECVD-SiO2 barrier layers. By varying the thickness of the PECVD-SiO2 layer underneath a single SiO1.0N0.23 layer, the extent of NC oxidation is tuned. The shrinkage of SiNCs is proven by a blueshift of the photoluminescence peak position as well as by transmission electron microscopy.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.16.Pr Micro- and nano-oxidation
81.40.Gh Other heat and thermomechanical treatments
78.55.Ap Elemental semiconductors

Modification of the conduction band edge energy via hybridization in quantum dots

Joshua T. Wright and Robert W. Meulenberg

Appl. Phys. Lett. 101, 193104 (2012); http://dx.doi.org/10.1063/1.4766289 (4 pages)

Online Publication Date: 7 November 2012

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X-ray absorption near edge structure spectroscopy (XANES) and theoretical modeling have been used to examine effects of hybridization on the conduction band edge in doped CdSe quantum dots (QDs). Experimentally, Cd M3-edge XANES provides evidence for a lowering of the CB minimum for Cu doped CdSe QDs that is dependent on Cu concentration. Theoretical modeling suggests the effects of hybridization between Cu and Cd atoms in the QD can explain our experimental results. The model can be extended for other dopant systems and provide a simple, yet effective, method to predict the effects of hybridization on the CB levels in QDs.
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73.21.La Quantum dots
78.67.Hc Quantum dots
78.70.Dm X-ray absorption spectra
61.72.uj III-V and II-VI semiconductors

Antenna-enhanced infrared near-field nanospectroscopy of a polymer

Jón Mattis Hoffmann, Benedikt Hauer, and Thomas Taubner

Appl. Phys. Lett. 101, 193105 (2012); http://dx.doi.org/10.1063/1.4766178 (4 pages) | Cited 2 times

Online Publication Date: 9 November 2012

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Scattering-type scanning near-field optical microscopy (s-SNOM) allows for optical nanoscale imaging and provides information about topographical and chemical material properties with subwavelength resolution. In this letter, we demonstrate that the sensitivity of s-SNOM can be improved by means of infrared resonant antennas. This technique is comparable to the application of resonant nanostructures in far-field surface-enhanced infrared spectroscopy. We find that the near-field amplitude spectra of the polymer poly(ethyl methacrylate) obtained on resonant structures are increased in absolute value as well as in contrast over those obtained on non-resonant, highly reflective materials such as gold.
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78.30.Jw Organic compounds, polymers
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.79.Fc Near-field scanning optical microscopes

Current-induced nanogap formation and graphitization in boron-doped diamond films

V. Seshan, C. R. Arroyo, A. Castellanos-Gomez, F. Prins, M. L. Perrin, S. D. Janssens, K. Haenen, M. Nesládek, E. J. R. Sudhölter, L. C. P. M. de Smet, H. S. J. van der Zant, and D. Dulic

Appl. Phys. Lett. 101, 193106 (2012); http://dx.doi.org/10.1063/1.4766346 (4 pages)

Online Publication Date: 9 November 2012

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A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to ∼1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation.
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81.05.uj Diamond/nanocarbon composites
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
61.72.Cc Kinetics of defect formation and annealing
71.20.Mq Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
81.16.Be Chemical synthesis methods

Adding colors to polydimethylsiloxane by embedding vertical silicon nanowires

Hyunsung Park, Kwanyong Seo, and Kenneth B. Crozier

Appl. Phys. Lett. 101, 193107 (2012); http://dx.doi.org/10.1063/1.4766944 (4 pages)

Online Publication Date: 9 November 2012

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We demonstrate that embedding silicon nanowires into polydimethylsiloxane (PDMS) presents a means for adding color, i.e., provides filtering at visible and near-infrared wavelengths. Silicon nanowires are etched from a silicon wafer and transferred to a PDMS film. Each measured transmission spectrum exhibits a dip at a wavelength determined by the nanowire radius. This is in agreement with electromagnetic simulations, which also help elucidate the roles of scattering and absorption in the observed results.
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81.05.Qk Reinforced polymers and polymer-based composites
81.07.Gf Nanowires

Detecting signals buried in noise via nanowire transistors using stochastic resonance

Katsuhiko Nishiguchi and Akira Fujiwara

Appl. Phys. Lett. 101, 193108 (2012); http://dx.doi.org/10.1063/1.4766946 (4 pages) | Cited 1 time

Online Publication Date: 9 November 2012

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We demonstrate stochastic resonance (SR), which takes advantage of noise to detect a weak signal, using a field-effect transistor (FET). An FET's structure composed of a nanowire channel enables current characteristics to show strong nonlinearity, which overcomes thermal limitation, and dynamic bistability, both of which boost an effect of SR and silhouette noise from noise. Moreover, the dynamic bistability enables SR effect to be enhanced by adding common noise to multiple FETs. The FET providing such unique characteristics opens the way to use SR for practical applications.
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85.30.Tv Field effect devices

The selective removal of metallic carbon nanotubes from As-grown arrays on insulating substrates

Andrew Tunnell, Vincent Ballarotto, and John Cumings

Appl. Phys. Lett. 101, 193109 (2012); http://dx.doi.org/10.1063/1.4765661 (4 pages)

Online Publication Date: 9 November 2012

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We present a method of selectively removing metallic single-walled carbon nanotubes (SWCNTs) from as-grown arrays on quartz substrates. The process utilizes an external silicon piece as a temporary global top gate to increase the resistance of the semiconducting SWCNTs while current is passed through the metallic SWCNTs, causing electrical breakdown through joule heating. The resulting SWCNT field-effect transistors (FETs) consistently produce on/off current ratios greater than 1000. Additionally, we find that the high frequency parasitic losses between 1 GHz and 6 GHz on the completed SWCNT FETs are significantly lower than on comparable SWCNT FETs fabricated on silicon substrates.
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85.30.Tv Field effect devices
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