APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

5 Nov 2012

Volume 101, Issue 19, Articles (19xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages)

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

E. García-Hemme, R. García-Hernansanz, J. Olea, D. Pastor, A. del Prado, I. Mártil, and G. Gónzalez-Díaz

Appl. Phys. Lett. 101, 192101 (2012); http://dx.doi.org/10.1063/1.4766171 (5 pages)

Online Publication Date: 6 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have analyzed the increase of the sheet conductance (ΔG□) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-metal transition limit show a remarkably high ΔG□, even higher than that measured in a silicon reference sample. This increase in the ΔG□ magnitude is contrary to the classic understanding of recombination centers action and supports the lifetime recovery predicted for concentrations of deep levels above the insulator-metal transition.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.56.-a Photoconduction and photovoltaic effects
71.30.+h Metal-insulator transitions and other electronic transitions
71.55.Cn Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
72.80.Cw Elemental semiconductors

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

T. Hofmann, P. Kühne, S. Schöche, Jr-Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva

Appl. Phys. Lett. 101, 192102 (2012); http://dx.doi.org/10.1063/1.4765351 (4 pages)

Online Publication Date: 6 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22±0.01)m0 at 1.5 K to (0.36±0.03)m0 at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.Fs III-V and II-VI semiconductors
78.70.Gq Microwave and radio-frequency interactions
85.30.Tv Field effect devices
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.My Galvanomagnetic and other magnetotransport effects

Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

Ph. Ebert, S. Landrock, Y. P. Chiu, U. Breuer, and R. E. Dunin-Borkowski

Appl. Phys. Lett. 101, 192103 (2012); http://dx.doi.org/10.1063/1.4765360 (4 pages) | Cited 2 times

Online Publication Date: 6 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of counterdoping on the Be dopant distribution in delta (δ)-doped layers embedded in Si-doped and intrinsic GaAs is investigated by cross-sectional scanning tunneling microscopy. δ-doped layers in intrinsic GaAs exhibit a large spreading, whereas those surrounded by Si-doped GaAs remain spatially localized. The different spreading is explained by the Fermi-level pinning at the growth surface, which leads to an increased Ga vacancies concentration with increasing Si counterdoping. The Ga vacancies act as sinks for the diffusing Be dopant atoms, hence retarding the spreading.
Show PACS
61.72.uj III-V and II-VI semiconductors
61.72.jd Vacancies

Effect of current filament characteristics on the output current of high-gain photoconductive semiconductor switch

Zenggong Jiang, Wei Shi, Lei Hou, Huaimeng Gui, Weili Ji, Cheng Ma, and Lin Zhang

Appl. Phys. Lett. 101, 192104 (2012); http://dx.doi.org/10.1063/1.4761999 (4 pages)

Online Publication Date: 8 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The output current characteristics of a high-gain photoconductive semiconductor switch (PCSS) were analyzed under different bias voltages. The results indicate that the voltages on different discharge regions of current filament are dynamic, which determines the output current transient characteristics. The physical processes of anode region influenced by the bias voltage of PCSS dominate that the output current presents the characteristic of lock-on or overshoot. The quench of current filament is determined by the external circuit and the carrier recombination process, resulting in the turn-off of high-gain PCSS.
Show PACS
85.60.Bt Optoelectronic device characterization, design, and modeling
85.30.De Semiconductor-device characterization, design, and modeling
84.32.Dd Connectors, relays, and switches

Second order nonlinear optical properties of AIBIIIC2VI chalcopyrite semiconductors

V. Kumar, S. K. Tripathy, and Vijeta Jha

Appl. Phys. Lett. 101, 192105 (2012); http://dx.doi.org/10.1063/1.4765058 (5 pages) | Cited 1 time

Online Publication Date: 8 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The second-order nonlinear optical (NLO) properties of ternary chalcopyrite semiconductors have been studied. The NLO tensor coefficients (d36) of the A-C and B-C bonds in AIBIIIC2VI semiconductors and their total contribution to whole family of these compounds have been calculated at 10.6 μm using plasma oscillations theory of solids. The calculated values are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been found between them.
Show PACS
78.66.Li Other semiconductors
77.22.Ch Permittivity (dielectric function)

High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors

T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 101, 192106 (2012); http://dx.doi.org/10.1063/1.4766732 (4 pages) | Cited 2 times

Online Publication Date: 9 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High quality AlN epilayers were grown on SiC substrates using double layer AlN buffers growth method by metal organic chemical vapor deposition and exploited as active deep ultraviolet optoelectronic materials through the demonstration of AlN Schottky barrier photodetectors. The grown AlN epilayers have smooth surfaces, low etch-pit density, narrow width of x-ray rocking curves, and strong band edge photoluminescence emission with low impurity emissions. AlN Schottky photodetectors are shown to possess outstanding features including extremely low dark current and high breakdown voltage.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close