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5 Nov 2012

Volume 101, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages)

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett
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Excitonic luminescence in two-dimensionally confined layered sulfide oxides

Hiraku Ogino, Jun-ichi Shimoyama, Kohji Kishio, Yukari Katsura, Mizuki Tsuboi, Kohei Yamanoi, Marilou Cadatal-Raduban, Tomoharu Nakazato, Toshihiko Shimizu, and Nobuhiko Sarukura

Appl. Phys. Lett. 101, 191901 (2012); http://dx.doi.org/10.1063/1.4764941 (3 pages)

Online Publication Date: 5 November 2012

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A layered sulfide oxide, Sr2ScCuSO3, is synthesized and its electronic structure and luminescence properties are investigated. Sr2ScCuSO3 is composed of alternating layers of antifluoride type sulfide and perovskite-like oxide. Electronic structure calculations reveal that Sr2ScCuSO3 is a direct band gap semiconductor with a relatively large band gap. Excitonic luminescence was observed from Sr2ScCuSO3 and Sr3Sc2Cu2S2O5. The temperature stability of the luminescence intensity of Sr2ScCuSO3 was higher than that of Sr3Sc2Cu2S2O5. Control of the crystal structure might allow the excitonic luminescence properties of such two-dimensional compounds to be enhanced.
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71.35.-y Excitons and related phenomena
78.55.Hx Other solid inorganic materials
71.20.Nr Semiconductor compounds

Direct imaging of atomic clusters in an amorphous matrix: A Co-C granular thin film

Kazuhisa Sato, Masaki Mizuguchi, Ruihe Tang, Jung-Goo Kang, Manabu Ishimaru, Koki Takanashi, and Toyohiko J. Konno

Appl. Phys. Lett. 101, 191902 (2012); http://dx.doi.org/10.1063/1.4765362 (3 pages)

Online Publication Date: 6 November 2012

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The atomic structure of extremely small cobalt (Co) nanoparticles embedded in an amorphous carbon (C) matrix has been studied by spherical aberration (Cs) corrected high-resolution transmission electron microscopy and focal-series restoration. The Co nanoparticles, 1–3 nm in diameter, are crystalline with the face centered cubic structure, while the radial distribution function analysis revealed the existence of a Co–C bond. The reconstructed phase images of the exit-wave function clearly show the projected potential distribution within the Co nanoparticles. The Cs-correction has hence a benefit to visualize embedded crystalline clusters unambiguously, which are responsible for the magnetotransport properties of the Co-C films.
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61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
72.15.Gd Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Ak Magnetic properties of monolayers and thin films
75.75.-c Magnetic properties of nanostructures

Enhanced broadband emission from Er-Tm codoped ZnO film due to energy transfer processes involving Si nanocrystals

Yu Pu, Fei Xu, Zuimin Jiang, Zhongquan Ma, Fang Lu, and Dandan Chen

Appl. Phys. Lett. 101, 191903 (2012); http://dx.doi.org/10.1063/1.4766348 (4 pages) | Cited 2 times

Online Publication Date: 7 November 2012

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Er-Tm-Si codoped ZnO film was synthesized by co-sputtering, in which Si nanocrystals (Si-NCs) were observed to form by annealing at 1173 K for 30 min. A fairly flat emission with ∼375 nm bandwidth is achieved, and its intensity is enhanced by nearly an order of magnitude by the Si-NCs, which acted as broadband sensitizers, compared with that without Si-NCs. The film also exhibits broadband emission with relatively stable spectral shape under different excitation lines. The 1.80 μm emission intensity increases by a factor of 3 while the 1.53 μm emission is almost constant with decreasing the operating temperature from 300 to 20 K, attributed to competition between three energy transfer processes from Si-NCs to Er3+/Tm3+ and from Er3+ to Tm3+, and their back transfer processes.
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78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
81.40.Gh Other heat and thermomechanical treatments
68.55.ag Semiconductors
61.72.Cc Kinetics of defect formation and annealing

Influence of cross-sectional geometry on the sensitivity and hysteresis of liquid-phase electronic pressure sensors

Yong-Lae Park, Daniel Tepayotl-Ramirez, Robert J. Wood, and Carmel Majidi

Appl. Phys. Lett. 101, 191904 (2012); http://dx.doi.org/10.1063/1.4767217 (4 pages) | Cited 1 time

Online Publication Date: 8 November 2012

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Cross-sectional geometry influences the pressure-controlled conductivity of liquid-phase metal channels embedded in an elastomer film. These soft microfluidic films may function as hyperelastic electric wiring or sensors that register the intensity of surface pressure. As pressure is applied to the elastomer, the cross-section of the embedded channel deforms, and the electrical resistance of the channel increases. In an effort to improve sensitivity and reduce sensor nonlinearity and hysteresis, we compare the electrical response of 0.25 mm2 channels with different cross-sectional geometries. We demonstrate that channels with a triangular or concave cross-section exhibit the least nonlinearity and hysteresis over pressures ranging from 0 to 70 kPa. These experimental results are in reasonable agreement with predictions made by theoretical calculations that we derive from elasticity and Ohm's Law.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems

Infrared characteristics of VO2 thin films for smart window and laser protection applications

Zhangli Huang, Sihai Chen, Chaohong Lv, Ying Huang, and Jianjun Lai

Appl. Phys. Lett. 101, 191905 (2012); http://dx.doi.org/10.1063/1.4766287 (4 pages) | Cited 2 times

Online Publication Date: 8 November 2012

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Vanadium dioxide (VO2) films with a low semiconductor-to-metal transition temperature of 45 °C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO2 grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO2 film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO2 thin film is a promising material for the application in related fields.
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42.70.-a Optical materials
42.79.Ci Filters, zone plates, and polarizers
42.79.Wc Optical coatings
78.30.Hv Other nonmetallic inorganics
78.66.-w Optical properties of specific thin films
81.15.Cd Deposition by sputtering
81.40.Gh Other heat and thermomechanical treatments

Scintillation property of rare earth-free SnO-doped oxide glass

Hirokazu Masai, Takayuki Yanagida, Yutaka Fujimoto, Masanori Koshimizu, and Toshinobu Yoko

Appl. Phys. Lett. 101, 191906 (2012); http://dx.doi.org/10.1063/1.4766340 (4 pages)

Online Publication Date: 8 November 2012

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The authors have demonstrated scintillation of rare earth (RE)-free Sn-doped oxide glass by excitation of ionizing radiation. It is notable that light emission is attained for RE-free transparent glass due to s2-sp transition of Sn2+ centre and the emission correlates with the excitation band at 20 eV. We have also demonstrated that excitation band of emission centre can be tuned by the chemical composition of the host glass. The present result is valuable not only for design of RE-free inorganic amorphous oxide scintillator but also for revealing the band structure of oxide glass by irradiation of ionizing radiation.
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78.70.Ps Scintillation
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.55.Qr Amorphous materials; glasses and other disordered solids
82.80.-d Chemical analysis and related physical methods of analysis
64.70.P- Glass transitions of specific systems

Tensile and fatigue behaviors of printed Ag thin films on flexible substrates

Gi-Dong Sim, Sejeong Won, and Soon-Bok Lee

Appl. Phys. Lett. 101, 191907 (2012); http://dx.doi.org/10.1063/1.4766447 (4 pages) | Cited 1 time

Online Publication Date: 8 November 2012

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Flexible electronics using nanoparticle (NP) printing has been highlighted as a key technology enabling eco-friendly, low-cost, and large-area fabrication. For NP-based printing to be used as a successive alternative to photolithography and vacuum deposition, stretchability and long term reliability must be considered. This paper reports the stretchability and fatigue behavior of 100 nm thick NP-based silver thin films printed on polyethylene-terephthalate substrate and compares it to films deposited by electron-beam evaporation. NP-based films show stretchability and fatigue life comparable to evaporated films with intergranular fracture as the dominant failure mechanism.
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81.05.Bx Metals, semimetals, and alloys
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.me Fatigue
62.20.mm Fracture
68.60.Bs Mechanical and acoustical properties

An all optical mapping of the strain field in GaAsN/GaAsN:H wires

M. Geddo, E. Giulotto, M. S. Grandi, M. Patrini, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini

Appl. Phys. Lett. 101, 191908 (2012); http://dx.doi.org/10.1063/1.4766285 (4 pages)

Online Publication Date: 9 November 2012

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GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen distributions in GaAsN micro-sized wires thus obtained have been mapped by an all optical procedure that combines micro-Raman scattering and photoreflectance spectroscopy. The strain field is related to the formation of N-H complexes along the hydrogen diffusion profile with an ensuing expansion of the GaAsN lattice whose patterning generates an anisotropic stress in the sample growth plane. These results highlight a powerful non-invasive tool to simultaneously determine both the H diffusion profile and the related strain field distribution.
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78.30.Fs III-V and II-VI semiconductors
66.30.-h Diffusion in solids
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