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5 Nov 2012

Volume 101, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 101, 193101 (2012); http://dx.doi.org/10.1063/1.4764508 (4 pages)

Ryan T. Tucker, Allan L. Beaudry, Joshua M. LaForge, Michael T. Taschuk, and Michael J. Brett
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Ultrathin Si/C graded layer to improve tribological properties of Co magnetic films

Ehsan Rismani, M. Abdul Samad, Sujeet K. Sinha, Reuben Yeo, Hyunsoo Yang, and C. Singh Bhatia

Appl. Phys. Lett. 101, 191601 (2012); http://dx.doi.org/10.1063/1.4765054 (5 pages)

Online Publication Date: 6 November 2012

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An ultrathin Si layer (≤1 nm) deposited on Co magnetic films was bombarded with energetic C+ ions to form a Co/Si/C mixed layer. This layer improved the tribological properties of the Co film as compared with those of a commercial hard disk media with 3.0 nm carbon overcoat and 1.4 nm of lubricant. Formation of a network of C-C and Si-C bonds at the outermost layer and the bulk of the Si/C film as well as formation of chemical bonds between the Co surface and the mixed layer was found as the main factors to improve the tribological properties.
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81.40.Pq Friction, lubrication, and wear
68.55.A- Nucleation and growth
62.20.Qp Friction, tribology, and hardness
68.60.Bs Mechanical and acoustical properties

Domain formation in anatase TiO2 thin films on LaAlO3 substrates

Shijian Zheng, Craig A. J. Fisher, Takeharu Kato, Yuki Nagao, Hiromichi Ohta, and Yuichi Ikuhara

Appl. Phys. Lett. 101, 191602 (2012); http://dx.doi.org/10.1063/1.4766338 (5 pages)

Online Publication Date: 7 November 2012

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Using advanced Cs-corrected scanning transmission electron microscopy, we have observed the atomic structures of coherent TiO2/LaAlO3 heterointerfaces in anatase TiO2 thin films deposited on single-crystal LaAlO3. Two epitaxial relationships are identified: (001)[100] TiO2//(001)[100] LaAlO3 and (001)[010] TiO2//(001)[100] LaAlO3. These epitaxial relationships and the terrace steps on the substrate surface result in the formation of multidomains in the anatase TiO2 thin films. Three types of domain boundaries are identified, namely, 90° rotation domain boundaries, translation domain boundaries, and mixtures of the two. These domain boundaries are expected to have a profound effect on the properties of the thin film.
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68.35.Ct Interface structure and roughness

Fast photo-switchable surfaces for boiling heat transfer applications

C. N. Hunter, D. B. Turner, M. L. Jespersen, M. H. Check, P. T. Borton, N. R. Glavin, and A. A. Voevodin

Appl. Phys. Lett. 101, 191603 (2012); http://dx.doi.org/10.1063/1.4766345 (4 pages)

Online Publication Date: 7 November 2012

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Several milligrams of the ruthenium-centered organometallic complex, ruthenium bis-4,4′-di(thiomethyl)-2,2′-bipyridine, mono-2 -(2-pyridyl)-1,3-oxathiane ([Ru{(HS-CH2)2-bpy}2{pox}](PF6)2) were synthesized and used to produce a self assembled monolayer film on a gold substrate. X-ray photoelectron spectroscopy analysis of the film detected the presence of bound thiolate, which is an indication of a chemisorbed film. Water contact angle measurements were performed before and after 5 min of visible light irradiation using an ozone-free 1000 W Xe(Hg) arc source with a 425-680 nm long pass mirror. The contact angle changed from 52° pre-irradiation (hydrophilic state) to 95° post-irradiation (hydrophobic state).
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
64.70.fh Boiling and bubble dynamics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.03.Cd Surface tension and related phenomena
79.60.Dp Adsorbed layers and thin films

High-resolution x-ray absorption studies of core excitons in hexagonal boron nitride

Lu Hua Li, Mladen Petravic, Bruce C. C. Cowie, Tan Xing, Robert Peter, Ying Chen, Chen Si, and Wenhui Duan

Appl. Phys. Lett. 101, 191604 (2012); http://dx.doi.org/10.1063/1.4767135 (4 pages) | Cited 2 times

Online Publication Date: 8 November 2012

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In the K-shell excitation spectroscopy studies of hexagonal boron nitride, a sharp π* resonance at 192.0 eV in the B K-edge region due to the B 1s–π* transition has been widely observed and accepted for three decades. However, our high-resolution near-edge x-ray absorption fine-structure studies disclose that this characteristic exciton peak actually consists of an asymmetric double-peak structure. Notable differences have been revealed in the polarization character of the two split peaks. These fine structures are explained by the coupling of core excitons to lattice vibrations with the inclusion of Jahn-Teller effect which breaks down Franck-Condon principle.
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78.70.Dm X-ray absorption spectra
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
71.35.-y Excitons and related phenomena
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
78.55.Cr III-V semiconductors

Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition

Ahrum Sohn, Haeri Kim, Dong-Wook Kim, Changhyun Ko, Shriram Ramanathan, Jonghyurk Park, Giwan Seo, Bong-Jun Kim, Jun-Hwan Shin, and Hyun-Tak Kim

Appl. Phys. Lett. 101, 191605 (2012); http://dx.doi.org/10.1063/1.4766292 (3 pages)

Online Publication Date: 8 November 2012

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Transport and Kelvin probe force microscopy measurements were simultaneously conducted on epitaxial VO2 thin films. The sample's work function abruptly dropped from 4.88 eV to 4.70 eV during heating from 333 K to 353 K, suggesting a significant change in its electronic band structure spanning the metal insulator transition. The work function showed nearly no statistical deviation across the film's surface during the transition, likely due to band bending at the boundaries of the small domains. Resistance profiles confirmed that the local work function corresponded closely to the resistance of the corresponding area.
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73.30.+y Surface double layers, Schottky barriers, and work functions
77.55.Px Epitaxial and superlattice films
71.20.Ps Other inorganic compounds
71.30.+h Metal-insulator transitions and other electronic transitions
72.60.+g Mixed conductivity and conductivity transitions

Imaging of a patterned and buried molecular layer by coherent acoustic phonon spectroscopy

Mike Hettich, Karl Jacob, Oliver Ristow, Chuan He, Jan Mayer, Martin Schubert, Vitalyi Gusev, Axel Bruchhausen, and Thomas Dekorsy

Appl. Phys. Lett. 101, 191606 (2012); http://dx.doi.org/10.1063/1.4767141 (4 pages)

Online Publication Date: 9 November 2012

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A molecular layer of aminopropyltriethoxysilane is patterned with a focused ion beam and subsequently covered by a gold film. The gold-polymer-substrate structures are afterwards imaged by ultrafast coherent acoustic phonon spectroscopy in reflection geometry. We demonstrate that the lateral structure of the covered polymer layer can be detected via the damping time of the vibrational mode of the gold film. Furthermore, we utilize Brillouin oscillations originating from the silicon substrate to map the structures and to estimate the molecular layer thickness.
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63.20.-e Phonons in crystal lattices
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.47.J- Ultrafast spectroscopy (<1 psec)

Surface effects on the radiation response of nanoporous Au foams

E. G. Fu, M. Caro, L. A. Zepeda-Ruiz, Y. Q. Wang, K. Baldwin, E. Bringa, M. Nastasi, and A. Caro

Appl. Phys. Lett. 101, 191607 (2012); http://dx.doi.org/10.1063/1.4764528 (5 pages)

Online Publication Date: 9 November 2012

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We report on an experimental and simulation campaign aimed at exploring the radiation response of nanoporous Au (np-Au) foams. We find different defect accumulation behavior by varying radiation dose-rate in ion-irradiated np-Au foams. Stacking fault tetrahedra are formed when np-Au foams are irradiated at high dose-rate, but they do not seem to be formed in np-Au at low dose-rate irradiation. A model is proposed to explain the dose-rate dependent defect accumulation based on these results.
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61.80.Jh Ion radiation effects
82.70.Rr Aerosols and foams
61.72.Nn Stacking faults and other planar or extended defects
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