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2 Jul 2012

Volume 101, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 101, 013701 (2012); http://dx.doi.org/10.1063/1.4730945 (5 pages)

Frederick Gertz, Rustam Azimov, and Alexander Khitun
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Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

Uttam Singisetti, Man Hoi Wong, and Umesh K. Mishra

Appl. Phys. Lett. 101, 012101 (2012); http://dx.doi.org/10.1063/1.4732795 (4 pages)

Online Publication Date: 2 July 2012

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In this Letter, we report experimental and theoretical investigations on the effect of the channel thickness on the low-field electron mobility in N-polar GaN quantum well channels. From temperature dependent Hall mobility data and numerical modeling of the mobility, the interface roughness is identified as a strong factor in determining the low field mobility as the channel thickness is scaled down. In the graded AlGaN back-barrier N-polar GaN field effect transistor structures studied here, the roughness leads to localization of electrons at a channel thickness of 3.5 nm leading to extremely low mobility.
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors
85.30.Tv Field effect devices
68.35.Ct Interface structure and roughness

Resistive switching behavior of a thin amorphous rare-earth scandate: Effects of oxygen content

W. Z. Chang, J. P. Chu, and S. F. Wang

Appl. Phys. Lett. 101, 012102 (2012); http://dx.doi.org/10.1063/1.4732079 (4 pages) | Cited 1 time

Online Publication Date: 3 July 2012

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In addition to beneficial ∼3 orders of magnitude in the resistance ratio, the amorphous HoScOx film exhibits excellent resistive switching (RS) properties of low electrical stress, thin thickness (36 nm), and simple process without forming or annealing, making it potentially useful for nonvolatile memory applications. Obvious oxygen effects are seen: no apparent RS property is detected in the near-stoichiometric film with 57.6 at. % oxygen, whereas distinct RS characteristics are observed in the oxygen-deficient (50.7 at. %) film. The RS property obtained is thought to be dominated by the high oxygen vacancy concentration, which serves as the filamentary conduction in the sample.
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73.61.Ng Insulators
68.55.jd Thickness
61.43.Er Other amorphous solids
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

On the radiation hardness of (Mg,Zn)O thin films grown by pulsed-laser deposition

Florian Schmidt, Holger von Wenckstern, Daniel Spemann, and Marius Grundmann

Appl. Phys. Lett. 101, 012103 (2012); http://dx.doi.org/10.1063/1.4733358 (4 pages)

Online Publication Date: 3 July 2012

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We report on electrical properties and the generation of the E4 defect in pulsed-laser deposited MgxZn1−xO thin films irradiated with 2.25 MeV protons. Whereas the electrical properties of the Schottky diodes as well as the net doping density of the samples did not change due to irradiation, the concentration of the E4 defect increased proportional to the applied dose as revealed by deep level transient spectroscopy. The generation rate η, is for binary ZnO thin films about 40  cm−1, a factor of 3 higher than in melt-grown single crystals, and increases to about 100  cm−1 for the Mg-alloyed thin films.
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81.05.Dz II-VI semiconductors
81.15.Fg Pulsed laser ablation deposition
85.30.Kk Junction diodes
68.55.ag Semiconductors
61.80.Jh Ion radiation effects
73.61.Ga II-VI semiconductors

Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime

T. Müller, J. Güttinger, D. Bischoff, S. Hellmüller, K. Ensslin, and T. Ihn

Appl. Phys. Lett. 101, 012104 (2012); http://dx.doi.org/10.1063/1.4733613 (4 pages) | Cited 1 time

Online Publication Date: 3 July 2012

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In situ-tunable radio-frequency reflectometry is used for fast charge-detection measurements on a graphene single quantum dot. The variable capacitance of our special matching network both grants tunability and compensates for the large stray capacitance between the charge sensor’s contacts and the doped silicon oxide backgate. To demonstrate the high detection bandwidth thus achieved, the rates for tunneling into and out of the dot through the same barrier are determined. Finally, an analytical model for calculating these rates in the multi-level tunneling regime is presented and found to correspond very well to our experimental observations.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.63.Kv Quantum dots
73.21.La Quantum dots

Optical properties of ultrathin InAs quantum-well-heterostructures

R. Samti, F. Raouafi, M. Chaouach, M. Maaref, A. Sakri, J. Even, J.-M. Gerard, and J.-M Jancu

Appl. Phys. Lett. 101, 012105 (2012); http://dx.doi.org/10.1063/1.4731783 (3 pages)

Online Publication Date: 5 July 2012

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Band structure calculations of complete InAs monolayer in AlGaAs/GaAs quantum wells are performed within the framework of the extended-basis sp3d5s* tight-binding model. We show that the optical properties can be tuned from the quantum well energy below the GaAs band-gap depending on the well thickness and the position of the probe. The results are supported by differential reflectivity measurements and represent a concept for optoelectronic devices with an operation wavelength widely tuneable around 850 nm employing GaAs process technology.
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78.67.De Quantum wells
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
71.20.Nr Semiconductor compounds

Effects of rapid thermal annealing on GaAs1-xBix alloys

A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David

Appl. Phys. Lett. 101, 012106 (2012); http://dx.doi.org/10.1063/1.4731784 (3 pages) | Cited 3 times

Online Publication Date: 5 July 2012

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The effects of rapid thermal annealing on the optical and structural properties of GaAs1-xBix alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the annealed GaAs1-xBix showed modest improvement (∼3 times) in photoluminescence (PL) while the PL peak wavelength remained relatively unchanged. It was found that bismuth related defects are not easily removed by annealing and the PL improvement may be dominated by the reduction of other types of defects including arsenic and gallium related defects. Also, the optimum annealing temperature is Bi composition dependent. For samples with x < 0.048, the optimum annealing temperature is 700 °C but reduces to 600 °C for higher compositions.
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61.72.Cc Kinetics of defect formation and annealing
61.72.uj III-V and II-VI semiconductors
61.66.Fn Inorganic compounds
78.55.Cr III-V semiconductors

Effect of metals and annealing on specific contact resistivity of GeTe/metal contacts

E. K. Chua, R. Zhao, L. P. Shi, T. C. Chong, T. E. Schlesinger, and J. A. Bain

Appl. Phys. Lett. 101, 012107 (2012); http://dx.doi.org/10.1063/1.4732787 (4 pages) | Cited 1 time

Online Publication Date: 6 July 2012

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The circular transfer length method was employed to extract the specific contact resistivity, ρc of GeTe (amorphous and crystalline state) with metals (Ni, W, TiW) to quantify the series contact resistance. The ρc of amorphous-GeTe with metals was also determined for different annealing conditions. Higher metal work functions produce lower ρc for both GeTe states and the ρc was reduced further for annealing temperatures greater than the GeTe crystallization temperature. This is suggested to be a consequence of the higher temperature required to diffuse sufficient interstitial metallic atoms to transform the GeTe covalent bonding at the interface to metallic bonding.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
61.72.jj Interstitials
61.72.Cc Kinetics of defect formation and annealing
73.30.+y Surface double layers, Schottky barriers, and work functions
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