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2 Jul 2012

Volume 101, Issue 1, Articles (01xxxx)

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Appl. Phys. Lett. 101, 013701 (2012); http://dx.doi.org/10.1063/1.4730945 (5 pages)

Frederick Gertz, Rustam Azimov, and Alexander Khitun
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Quantitative study of the interfacial intermixing and segregation effects across the wetting layer of Ga(As,Sb)-capped InAs quantum dots

Esperanza Luna, Ana M. Beltrán, Ana M. Sánchez, and Sergio I. Molina

Appl. Phys. Lett. 101, 011601 (2012); http://dx.doi.org/10.1063/1.4731790 (4 pages) | Cited 1 time

Online Publication Date: 2 July 2012

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Quantitative chemical information from semiconductor nanostructures is of primary importance, in particular at interfaces. Using a combination of analytical transmission electron microscopy techniques, we are able to quantify the interfacial intermixing and surface segregation across the intricate non-common-atom wetting layer (WL) of Ga(As,Sb)-capped InAs quantum dots. We find: (i) the WL-on-GaAs(buffer) interface is abrupt and perfectly defined by sigmoidal functions, in analogy with two-dimensional epitaxial layers, suggesting that the interface formation process is similar in both cases; (ii) indium segregation is the prevailing mechanism (e.g., over antimony segregation), which eventually determines the composition profile across the GaAs(cap)-on-WL interface.
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68.35.Dv Composition, segregation; defects and impurities
61.46.-w Structure of nanoscale materials
64.75.Qr Phase separation and segregation in semiconductors
68.08.Bc Wetting
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