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12 Nov 2012

Volume 101, Issue 20, Articles (20xxxx)

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Appl. Phys. Lett. 101, 203102 (2012); http://dx.doi.org/10.1063/1.4747717 (4 pages)

Hyukjin Jung and Ki-Hun Jeong
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Interface engineering between metal electrode and GeO2 dielectric for future Ge-based metal-oxide-semiconductor technologies

Shingo Ogawa, Iori Hideshima, Yuya Minoura, Takashi Yamamoto, Asami Yasui, Hiroaki Miyata, Kosuke Kimura, Toshihiko Ito, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe

Appl. Phys. Lett. 101, 201601 (2012); http://dx.doi.org/10.1063/1.4766745 (5 pages) | Cited 1 time

Online Publication Date: 12 November 2012

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Interfacial reactions between a metal-gate electrode and GeO2 dielectric in Ge-based metal-oxide-semiconductor (MOS) devices have been investigated by several analytical techniques, and we have demonstrated a method to suppress the interfacial reactions. Although no reaction occurs at the Au/GeO2 interface, a significant reaction was observed at the Al/GeO2 interface, which leads to increases in the leakage current and defect states in an MOS capacitor. While Al is oxidized at the Al/GeO2 interface, GeO2 is reduced to form Ge-Ge and Ge-Al bonding units during the early stage of the Al deposition. Moreover, the Ge-Al alloy segregates to the Al-electrode surface during the sequent Al deposition. These interfacial reactions are dramatically suppressed by insertion of ultrathin Al2O3 into the Al/GeO2 interface.
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84.32.Tt Capacitors

Transition from laminar to three-dimensional growth mode in pulsed laser deposited BiFeO3 film on (001) SrTiO3

Priya V. Chinta, Sara J. Callori, Matthew Dawber, Almamun Ashrafi, and Randall L. Headrick

Appl. Phys. Lett. 101, 201602 (2012); http://dx.doi.org/10.1063/1.4765363 (5 pages) | Cited 2 times

Online Publication Date: 12 November 2012

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Real-time specular x-ray reflectivity of pulsed laser deposited BiFeO3 films exhibits unit-cell oscillations, with diffuse scattering intensity out-of-phase with the specular intensity. The growth mode is thus identified as nucleation and coalescence of unit-cell height islands. The growth rate is insensitive to the deposition rate, suggesting self-limiting growth. Beyond several monolayers the diffuse intensity increases abruptly, signaling a transition from two-dimensional to three-dimensional growth. Ex situ atomic force microscopy shows that mounds merge after a few more deposited layers, leaving arrays of mesas with some holes due to incomplete coalescence.
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81.15.Fg Pulsed laser ablation deposition
68.55.at Other materials
77.80.B- Phase transitions and Curie point
77.55.Nv Multiferroic/magnetoelectric films
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
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