APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Nov 2012

Volume 101, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 221101 (2012); http://dx.doi.org/10.1063/1.4767646 (5 pages)

Mikhail A. Kats, Deepika Sharma, Jiao Lin, Patrice Genevet, Romain Blanchard, Zheng Yang, M. Mumtaz Qazilbash, D. N. Basov, Shriram Ramanathan, and Federico Capasso
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Ohmic contact on n-type Ge using Yb-germanide

Zhi-Wei Zheng, Teng-Chieh Ku, Ming Liu, and Albert Chin

Appl. Phys. Lett. 101, 223501 (2012); http://dx.doi.org/10.1063/1.4768700 (3 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Poor ohmic contact by Fermi-level pinning to valence band (EV) edge is one of the major challenges for germanium (Ge) n-type metal–oxide–semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 °C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.
Show PACS
73.40.Ns Metal-nonmetal contacts
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.30.+y Surface double layers, Schottky barriers, and work functions
61.72.Cc Kinetics of defect formation and annealing
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure

Yu-Chun Chen, Ting-Chang Chang, Hung-Wei Li, Tien-Yu Hsieh, Te-Chih Chen, Chang-Pei Wu, Cheng-Hsu Chou, Wang-Cheng Chung, Jung-Fang Chang, and Ya-Hsiang Tai

Appl. Phys. Lett. 101, 223502 (2012); http://dx.doi.org/10.1063/1.4767996 (3 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS.
Show PACS
85.30.Tv Field effect devices

Nonlinear output properties of cantilever driving low frequency piezoelectric energy harvester

Chundong Xu, Bo Ren, Zhu Liang, Jianwei Chen, Haiwu Zhang, Qingwen Yue, Qing Xu, Xiangyong Zhao, and Haosu Luo

Appl. Phys. Lett. 101, 223503 (2012); http://dx.doi.org/10.1063/1.4768219 (4 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Cantilever driving low frequency piezoelectric energy harvester (CANDLE) has been found as a promising structure for vibration energy harvesting. This paper presents the nonlinear output properties of the CANDLE to optimize the performance of the device. Simulation results of the finite element method illustrate that nonlinear contacts between the cymbal transducers and the cantilever beam are main reasons of the nonlinear output. However, high excitation acceleration of the nonlinear leap point limits the application of the device. Based on the simulation results and theory analysis, the excitation acceleration is reduced to 30 m/s2 by increasing the proof mass.
Show PACS
84.60.-h Direct energy conversion and storage
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
02.70.Dh Finite-element and Galerkin methods

Improved and orange emission from an n-ZnO/p-Si heterojunction light emitting device with NiO as the intermediate layer

Huihui Huang, Guojia Fang, Xiaoming Mo, Hao Long, Haoning Wang, Songzhan Li, Yuan Li, Yupeng Zhang, Chunxu Pan, and David L. Carroll

Appl. Phys. Lett. 101, 223504 (2012); http://dx.doi.org/10.1063/1.4768238 (5 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
n-ZnO/p-Si heterojunction light emitting devices with and without a NiO intermediate layer were fabricated using a radio frequency magnetron sputtering system. Electroluminescence measurements revealed that the device with the NiO intermediate layer exhibits a sharper and stronger orange emission peaks at ∼670 nm compared with that of the device without the NiO layer. And the light output-current characteristic of the n-ZnO/NiO/p-Si heterojunction device follows a nearly linear relationship (L ∝ I) rather than the superlinear relationship (L ∝ I1.5) for the n-ZnO/p-Si heterojunction device. This work indicates that the NiO intermediate layer could effectively improve the performance of the n-ZnO/p-Si heterojunction light emitting device.
Show PACS
85.60.Jb Light-emitting devices

The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors

E. R. Hsieh and Steve S. Chung

Appl. Phys. Lett. 101, 223505 (2012); http://dx.doi.org/10.1063/1.4768687 (4 pages)

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An effect, called random trap fluctuation (RTF), is proposed to study the threshold voltage (Vth) fluctuation of metal oxide semiconductor field effect transistors (MOSFETs) under Fowler-Nordeim (FN) or hot carrier (HC) stress condition. Experiments have been demonstrated on n-channel MOSFETs, and it was found that not only the random dopant fluctuation (RDF) but also the stress-induced traps vary the Vth fluctuation. More importantly, the stress-induced trap barrier determines the Vth fluctuation. For devices after FN stress, Vth fluctuation is enhanced since the trap barrier regulates the transporting carriers. For devices after HC stress, Vth fluctuation is supressed since the carriers are backscattered into the channel by the trap barrier and fewer carriers with higher energy pass through the barrier. These results provide us a clear understanding on another source of Vth fluctuations in addition to the RDF as devices are further scaled.
Show PACS
85.30.Tv Field effect devices

Frequency agile characteristics of a dielectric filled relativistic magnetron with diffraction output

Wei Li, Jun Zhang, Yong-gui Liu, Han-wu Yang, and Di-fu Shi

Appl. Phys. Lett. 101, 223506 (2012); http://dx.doi.org/10.1063/1.4768691 (3 pages)

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This paper reports the investigations of a dielectric filled relativistic magnetron with diffraction output (MDO) on frequency agile. The mechanism of frequency agile is theoretically analyzed. Particle-in-cell simulations and preliminary experiments prove the analytics. In experiments, under the working conditions, 605 kV and 0.3 T, a microwave with 1.98 GHz, 200 MW is radiated from an A6 type MDO when the 95% Al2O3 ceramics with the total thickness of 0.9 cm are filled. Compared with the microwave of 3.72 GHz, 240 MW obtained without the ceramics filled, the frequency agile from S band to L band is achieved.
Show PACS
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. Urteaga, B. Brar, and T.-W. Kim

Appl. Phys. Lett. 101, 223507 (2012); http://dx.doi.org/10.1063/1.4769230 (4 pages)

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this Letter, we report on sub-100 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors (MOSFETs) with outstanding logic and high-frequency performance. The device features ex-situ atomic-layer-deposition (ALD) 2-nm Al2O3 layer on a molecular-beam-epitaxy (MBE) 1-nm InP layer and is fabricated through a triple-recess process. An Lg = 60 nm MOSFET exhibits on-resistance (RON) = 220 Ω-μm, subthreshold-swing (S) = 110 mV/decade, and drain-induced-barrier-lowering (DIBL) = 200 mV/V at VDS = 0.5 V, together with enhancement-mode operation. More importantly, this device displays record maximum transconductance (gm_max) = 2000 μs/μm and current-gain cutoff frequency (fT) = 370 GHz at VDS = 0.5 V, in any III-V MOSFET technology.
Show PACS
85.30.Tv Field effect devices
85.40.Sz Deposition technology

Observation of threshold energy and hysteresis in high current ion beam guiding and transmission through a micro-glass-capillary

Samit Paul, A. Jayakiran, and Sudeep Bhattacharjee

Appl. Phys. Lett. 101, 223508 (2012); http://dx.doi.org/10.1063/1.4768002 (4 pages)

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The energy dependent guiding of high current density (0.1–3 A/m2) argon ion beams through a micro-glass-capillary is studied. It is observed that ion transmission through the capillary takes place only if its energy is greater than the retarding potential barrier, which depends upon the amount of charge deposited on the capillary inner wall. Foremost evidence of the observation that the transmitted current exhibits hysteresis with ion energy is presented. Particle in cell simulations carried out by solving Poisson's and Newton's force equation self-consistently, agree reasonably well with the experimental results.
Show PACS
41.85.Ja Particle beam transport
41.85.Ar Particle beam extraction, beam injection

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

Michael J. Cich, Rafael I. Aldaz, Arpan Chakraborty, Aurelien David, Michael J. Grundmann, Anurag Tyagi, Meng Zhang, Frank M. Steranka, and Michael R. Krames

Appl. Phys. Lett. 101, 223509 (2012); http://dx.doi.org/10.1063/1.4769228 (3 pages)

Online Publication Date: 29 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present experimental results on III–nitride light-emitting diodes emitting at 410 nm, grown on low-defectivity bulk GaN substrates. The epitaxial layers are optimized for high peak efficiency and maintain efficiency at very high current densities. We use a volumetric device architecture with surface roughness to maximize light extraction efficiency. We report an external quantum efficiency of 68% at 180 A cm−2. No current crowding is observed at high current density. We also demonstrate flat-line reliable operation to over 1000 h.
Show PACS
85.60.Jb Light-emitting devices

Low-power resistive switching in Au/NiO/Au nanowire arrays

S. Brivio, G. Tallarida, D. Perego, S. Franz, D. Deleruyelle, C. Muller, and S. Spiga

Appl. Phys. Lett. 101, 223510 (2012); http://dx.doi.org/10.1063/1.4769044 (4 pages)

Online Publication Date: 30 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Arrays of vertical nanowires structured in Au/NiO/Au segments with 50 nm diameter are characterized by conductive atomic force microscopy to investigate unipolar resistive switching in NiO at the nanoscale. The switching cycles are characterized by extremely low power consumption down to 1.3 nW, which constitutes a significant improvement in nanowire-based resistive switching memory devices. The trend of the reset current as a function of the set resistance, typical of unipolar memories, is extended to a much wider current range than what is reported in literature, confirming the role of Joule heating in the reset process for very low reset currents.
Show PACS
84.30.Sk Pulse and digital circuits

Parametric excitation of a micro Coriolis mass flow sensor

H. Droogendijk, J. Groenesteijn, J. Haneveld, R. G. P. Sanders, R. J. Wiegerink, T. S. J. Lammerink, J. C. Lötters, and G. J. M. Krijnen

Appl. Phys. Lett. 101, 223511 (2012); http://dx.doi.org/10.1063/1.4769094 (3 pages)

Online Publication Date: 30 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate that a micro Coriolis mass flow sensor can be excited in its torsional movement by applying parametric excitation. Using AC-bias voltages for periodic electrostatic spring softening, the flow-filled tube exhibits a steady vibration at suitable voltage settings. Measurements show that the sensor for this type of excitation can be used to measure water flow rates within a range of 0 ± 500 μl/h with an accuracy of 1% full scale error.
Show PACS
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
47.80.-v Instrumentation and measurement methods in fluid dynamics
47.60.Dx Flows in ducts and channels
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close