• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Nov 2012

Volume 101, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 221101 (2012); http://dx.doi.org/10.1063/1.4767646 (5 pages)

Mikhail A. Kats, Deepika Sharma, Jiao Lin, Patrice Genevet, Romain Blanchard, Zheng Yang, M. Mumtaz Qazilbash, D. N. Basov, Shriram Ramanathan, and Federico Capasso
back to top
RSS Feeds

Abundance of CuZn + SnZn and 2CuZn + SnZn defect clusters in kesterite solar cells

Shiyou Chen, Lin-Wang Wang, Aron Walsh, X. G. Gong, and Su-Huai Wei

Appl. Phys. Lett. 101, 223901 (2012); http://dx.doi.org/10.1063/1.4768215 (4 pages) | Cited 3 times

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Kesterite solar cells show the highest efficiency when the absorber layers (Cu2ZnSnS4 [CZTS], Cu2ZnSnSe4 [CZTSe] and their alloys) are non-stoichiometric with Cu/(Zn+Sn) ≈ 0.8 and Zn/Sn ≈ 1.2. The fundamental cause is so far not understood. Using a first-principles theory, we show that passivated defect clusters such as CuZn+SnZn and 2CuZn+SnZn have high concentrations even in stoichiometric samples with Cu/(Zn+Sn) and Zn/Sn ratios near 1. The partially passivated CuZn+SnZn cluster produces a deep donor level in the band gap of CZTS, and the fully passivated 2CuZn+SnZn cluster causes a significant band gap decrease. Both effects are detrimental to photovoltaic performance, so Zn-rich and Cu, Sn-poor conditions are required to prevent their formation and increase the efficiency. The donor level is relatively shallower in CZTSe than in CZTS, which gives an explanation to the higher efficiency obtained in Cu2ZnSn(S,Se)4 (CZTSSe) cells with high Se content.
Show PACS
88.40.jm Thin film III-V and II-VI based solar cells
88.40.hj Efficiency and performance of solar cells

CdSe quantum dots synthesized by laser ablation in water and their photovoltaic applications

Sabit Horoz, Liyou Lu, Qilin Dai, Jiajun Chen, Baichhabi Yakami, J. M. Pikal, Wenyong Wang, and Jinke Tang

Appl. Phys. Lett. 101, 223902 (2012); http://dx.doi.org/10.1063/1.4768706 (4 pages)

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
CdSe quantum dots (QDs) have been prepared by a facile and clean synthesis method––laser ablation in water. The structural and luminescent properties of the CdSe QDs have been investigated. The CdSe QDs of wurtzite crystal structure have an average particle size of about 5 nm. The QDs can be attached to ZnO nanowires making them ideal for applications in QD-sensitized nanowire solar cells. A uniqueness of the QDs attached to the ZnO nanowires by this laser ablation method is that they do not contain ligands, and the preparation avoids the complicated process of ligand exchange.
Show PACS
81.07.Ta Quantum dots
88.40.hj Efficiency and performance of solar cells
88.40.J- Types of solar cells
78.55.Et II-VI semiconductors
81.05.Dz II-VI semiconductors
78.67.Hc Quantum dots
Close
Google Calendar
ADVERTISEMENT

close