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26 Nov 2012

Volume 101, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 101, 221101 (2012); http://dx.doi.org/10.1063/1.4767646 (5 pages)

Mikhail A. Kats, Deepika Sharma, Jiao Lin, Patrice Genevet, Romain Blanchard, Zheng Yang, M. Mumtaz Qazilbash, D. N. Basov, Shriram Ramanathan, and Federico Capasso
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Tandem organic photodetectors with tunable, broadband response

S. Matthew Menke, Richa Pandey, and Russell J. Holmes

Appl. Phys. Lett. 101, 223301 (2012); http://dx.doi.org/10.1063/1.4768807 (4 pages) | Cited 1 time

Online Publication Date: 27 November 2012

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Broadband photodetection is achieved by integrating three electron donor materials with complementary absorption into an organic photodetector (OPD). While a single donor-acceptor heterojunction can show broadband response, the spectral tunability is intrinsically limited to the absorption profiles of the active materials. Here, we demonstrate broadband OPDs consisting of multiple bulk heterojunctions arranged in tandem. These OPDs show high responsivity under moderate reverse bias from the ultraviolet to the near-infrared. By combining materials with complementary absorption in a tandem OPD, we demonstrate that the response from each band can be separately tuned with manipulation of the heterojunction thicknesses or composition.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
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The roles of metallic rectangular-grating and planar anodes in the photocarrier generation and transport of organic solar cells

Wei E. I. Sha, Wallace C. H. Choy, and Weng Cho Chew

Appl. Phys. Lett. 101, 223302 (2012); http://dx.doi.org/10.1063/1.4768236 (4 pages)

Online Publication Date: 27 November 2012

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A multiphysics study carries out on organic solar cells (OSCs) by solving Maxwell's and semiconductor equations simultaneously. By introducing a metallic rectangular-grating as the anode, surface plasmons are excited resulting in nonuniform exciton generation. Meanwhile, the internal E-field of plasmonic OSCs is modified with the modulated anode boundary. The plasmonic OSC improves 13% of short-circuit current but reduces 7% of fill factor (FF) compared to the standard one with a planar anode. The uneven photocarrier generation and transport by the grating anode are physical origins of the dropped FF. This work provides fundamental multiphysics modeling and understanding for plasmonic OSCs.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells
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Influence of the excitation area on the thresholds of organic second-order distributed feedback lasers

Eva M. Calzado, José M. Villalvilla, Pedro G. Boj, José A. Quintana, Victor Navarro-Fuster, Aritz Retolaza, Santos Merino, and María A. Díaz-García

Appl. Phys. Lett. 101, 223303 (2012); http://dx.doi.org/10.1063/1.4768242 (5 pages) | Cited 1 time

Online Publication Date: 27 November 2012

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It is shown that the optical pump power (or energy) density thresholds required to obtain lasing from organic second-order distributed feedback lasers, increase when the excitation area (A) is smaller than a certain value (Acrit). So, in order to obtain the minimum possible thresholds and to ensure that they constitute adequate quantities for comparison purposes, the condition A > Acrit should be fulfilled. Results also indicate that when A < Acrit (Acrit ∼ 0.1 mm2 for the devices studied here), the operational device lifetime, which depends mainly on the pump power (or energy) density, becomes drastically reduced.
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42.55.-f Lasers
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High-performance organic transistors with high-k dielectrics: A comparative study on solution-processed single crystals and vacuum-deposited polycrystalline films of 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene

W. Ou-Yang, T. Uemura, K. Miyake, S. Onish, T. Kato, M. Katayama, M. Kang, K. Takimiya, M. Ikeda, H. Kuwabara, M. Hamada, and J. Takeya

Appl. Phys. Lett. 101, 223304 (2012); http://dx.doi.org/10.1063/1.4769436 (5 pages)

Online Publication Date: 30 November 2012

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High carrier-mobility organic field-effect transistors are developed employing high-k gate dielectrics so that unprecedentedly high transconductance is realized. 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) solution-crystallized films are coated on hybrid gate insulators of silane self-assembled monolayers and high-k Al2O3 formed by atomic-layer-deposition. Intrinsically high carrier mobility exceeding 10 cm2/Vs in the crystalline C10-DNTT is preserved even on the high-k gate insulators because of suppressed coupling of the field-induced carriers to the polarization of the dielectrics.
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85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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