APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Nov 2012

Volume 101, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 221101 (2012); http://dx.doi.org/10.1063/1.4767646 (5 pages)

Mikhail A. Kats, Deepika Sharma, Jiao Lin, Patrice Genevet, Romain Blanchard, Zheng Yang, M. Mumtaz Qazilbash, D. N. Basov, Shriram Ramanathan, and Federico Capasso
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Fabrication of quasi-periodic surface microcavities by selective etching of self-organized superalloys for high-temperature photonics

Makoto Shimizu, Kiyotaka Konno, Fumitada Iguchi, and Hiroo Yugami

Appl. Phys. Lett. 101, 221901 (2012); http://dx.doi.org/10.1063/1.4767903 (4 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Large-area fabrication of periodic microstructures on refractory metals surface is a key technology supporting the practical application of spectrally controlled thermal radiation using surface microcavities. This report describes large-area fabrication of two-dimensional submicron quasi-periodic microcavities using self-organization on a nickel-based superalloy. The surface microcavities on a bulk metal are obtained by heat treatment and simple chemical etching. The emission peak attributed to the confined modes inside cavities can be tuned by controlling the microcavity size from 0.27 to 0.53 μm. Emittance enhancement and thermal stability are also confirmed at 973 K.
Show PACS
81.65.Cf Surface cleaning, etching, patterning
81.40.Gh Other heat and thermomechanical treatments

Coherent growth of GaGdN layers with high Gd concentration on GaN(0001)

K. Higashi, S. Hasegawa, D. Abe, Y. Mitsuno, S. Komori, F. Ishikawa, M. Ishimaru, and H. Asahi

Appl. Phys. Lett. 101, 221902 (2012); http://dx.doi.org/10.1063/1.4767992 (4 pages) | Cited 1 time

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the coherent growth of GaGdN with high Gd concentration on a GaN template using radio-frequency plasma-assisted molecular beam epitaxy under elevated growth conditions. X-ray diffraction and cross-sectional transmission electron microscopy observations revealed that at a growth temperature of 700 °C or below, GaGdN layers are coherently grown on the GaN templates without segregation of the secondary phases. As the GdN mole fraction x was increased to 0.08, the c-axis lattice parameter in Ga1−xGdxN increased linearly. Increasing the growth temperature to 750 °C causes lattice relaxation in GaGdN. All GaGdN samples exhibited photoluminescence emissions near the band-edge, a blue luminescence band emission, and a green luminescence band emission. The origin of the green luminescence band emission is discussed in relation to the compressive strain existing in the GaGdN layers coherently grown on GaN.
Show PACS
68.55.ag Semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors
52.77.Dq Plasma-based ion implantation and deposition
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Large effects of pressure induced inelastic channels on interface thermal conductance

Yann Chalopin, Natalio Mingo, Jiankuai Diao, Deepak Srivastava, and Sebastian Volz

Appl. Phys. Lett. 101, 221903 (2012); http://dx.doi.org/10.1063/1.4766266 (4 pages) | Cited 1 time

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A large effect of pressure on the thermal conductance of silicon/carbon nanotube junctions is shown to result from induced anharmonicity at the interface. Through atomistic simulations, we demonstrate the opening of pressure induced inelastic phonon channels, which are responsible for a several fold increase of the thermal conductance.
Show PACS
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
63.20.Ry Anharmonic lattice modes
68.35.Ja Surface and interface dynamics and vibrations

In situ X-ray diffraction study of deformation behavior in a Fe/NiTi composite

Shijie Hao, Lishan Cui, Yang Shao, Jiang Jiang, Daqiang Jiang, Shan Wang, Minshu Du, Yandong Wang, Dennis E. Brown, and Yang Ren

Appl. Phys. Lett. 101, 221904 (2012); http://dx.doi.org/10.1063/1.4767993 (4 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A Fe/NiTi composite wire fabricated by simple mechanical processing exhibits a singular deformation feature of strain recovery ratio increase with increasing tensile strain, which is diametrically opposite to that of conventional metal materials. Furthermore, the composite possesses a recoverable strain of over 7% and a higher mechanical damping capability than that of the well-known high damping NiTi shape memory alloy. In-situ synchrotron X-ray diffraction reveals that these extraordinary features originate from the strong interaction between the soft Fe core and the superelastic NiTi tube during tensile cycling. This study offers in-depth understanding of the deformation behavior of the composites composed of soft metal and superelastic shape memory alloy.
Show PACS
81.40.Lm Deformation, plasticity, and creep
62.20.fg Shape-memory effect; yield stress; superelasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity

Rare-earth free yellow-green emitting NaZnPO4:Mn phosphor for lighting applications

D. Haranath, S. Mishra, S. Yadav, R. K. Sharma, L. M. Kandpal, N. Vijayan, M. K. Dalai, G. Sehgal, and V. Shanker

Appl. Phys. Lett. 101, 221905 (2012); http://dx.doi.org/10.1063/1.4768214 (5 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Manganese-doped sodium zinc phosphate (NaZnPO4:Mn) phosphor with exceptional features having ultra-violet (UV) to visible absorption (300–470 nm), yellow-green (∼543 nm) broad-band photoluminescence (PL), and appreciable color co-ordinates (x = 0.39, y = 0.58) is reported. It has a crystal structure consisting of discrete PO4 tetrahedra linked by ZnO4 and NaO4 distorted tetrahedral such that three tetrahedra, one of each kind, share one corner. The presence of UV sensitive Zn-O-Zn bonds and their efficient energy transfer to Mn2+ ions resulted in brightest PL and external quantum yield of 63% at 418 nm. Our experiment demonstrated the possibility of producing inexpensive white-light emitting devices for future.
Show PACS
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
61.66.Fn Inorganic compounds
85.60.Jb Light-emitting devices

An investigation of the Young's modulus of single-crystalline wurtzite indium nitride using an atomic force microscopy based micromechanical bending test

Yen-Sheng Lu, Chih-Hung Hsieh, Shangjr Gwo, Max T. Hou, Jung-Sheng Yao, and J. Andrew Yeh

Appl. Phys. Lett. 101, 221906 (2012); http://dx.doi.org/10.1063/1.4763459 (4 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High quality single-crystalline wurtzite indium nitride (InN) thin film was first demonstrated to have a Young's modulus of 149 ± 5 GPa along a-axis using atomic force microscopy microbending test since the revision of InN energy gap. These released InN cantilever beams were examined to have ignorable in-plane residual stress using micro-Raman spectroscopy, where the E2 (high) mode at 490 cm−1 exists zero shift because of the perfect lattice match (8:9 commensurate) between InN and underneath aluminum nitride buffer. The experimental value of Young's modulus agrees well with a number of theoretical estimations ranging from 146 to 159 GPa.
Show PACS
81.40.Jj Elasticity and anelasticity, stress-strain relations
71.20.Nr Semiconductor compounds
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
68.60.-p Physical properties of thin films, nonelectronic
62.20.de Elastic moduli

Valley polarization and intervalley scattering in monolayer MoS2

G. Kioseoglou, A. T. Hanbicki, M. Currie, A. L. Friedman, D. Gunlycke, and B. T. Jonker

Appl. Phys. Lett. 101, 221907 (2012); http://dx.doi.org/10.1063/1.4768299 (4 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We probe the degree of circular polarization of the emitted photoluminescence from a single layer of MoS2 as a function of the circularly polarized photo-excitation energy. A Single layer of MoS2 has strong emission at around 1.9 eV associated with a direct transition at the K-point of the Brillouin zone. The circular polarization of the photoluminescence is very high for excitation near the bandgap and has a power-law decrease as the excitation energy increases. We identify phonon-assisted intervalley scattering as the primary spin relaxation mechanism and present a model that explains the wide variation in values for the polarization reported in the literature.
Show PACS
78.66.Li Other semiconductors
63.22.Np Layered systems
71.35.-y Excitons and related phenomena
71.20.Ps Other inorganic compounds
75.70.Ak Magnetic properties of monolayers and thin films
78.55.Hx Other solid inorganic materials

Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers

E. M. Krivoy, S. Rahimi, H. P. Nair, R. Salas, S. J. Maddox, D. J. Ironside, Y. Jiang, V. D. Dasika, D. A. Ferrer, G. Kelp, G. Shvets, D. Akinwande, and S. R. Bank

Appl. Phys. Lett. 101, 221908 (2012); http://dx.doi.org/10.1063/1.4766945 (4 pages)

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the growth of high‐quality, single crystal, rocksalt LaAs on III‐V substrates; employing thin well-behaved LuAs barriers layers at the III-V/LaAs interfaces to suppress nucleation of other LaAs phases, interfacial reactions between GaAs and LaAs, and polycrystalline LaAs growth. This method enables growth of single crystal epitaxial rocksalt LaAs with enhanced structural and electrical properties. Temperature-dependent resistivity and optical reflectivity measurements suggest that epitaxial LaAs is semimetallic, consistent with bandstructure calculations in literature. LaAs exhibits distinct electrical and optical properties, as compared with previously reported rare-earth arsenide materials, with a room-temperature resistivity of ∼459 μΩ-cm and an optical transmission window >50% between ∼3-5 μm.
Show PACS
73.61.-r Electrical properties of specific thin films
78.30.Hv Other nonmetallic inorganics
78.66.-w Optical properties of specific thin films
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.at Other materials

Carbon nanotube film interlayer for strain and damage sensing in composites during dynamic compressive loading

A. S. Wu, W.-J. Na, W.-R. Yu, J.-H. Byun, and T.-W. Chou

Appl. Phys. Lett. 101, 221909 (2012); http://dx.doi.org/10.1063/1.4765654 (5 pages) | Cited 1 time

Online Publication Date: 26 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A major challenge in the damage assessment of materials under dynamic, high strain rate loading lies in the inability to apply most health monitoring methodologies to the analysis and evaluation of damage incurred on short timescales. Here, we present a resistance-based sensing method utilizing an electrically conductive carbon nanotube film in a fiberglass/vinyl ester composite. This method reveals that applied strain and damage in the form of matrix cracking and delamination give rise to electrical resistance increases across the composite specimen; these can be measured in real-time during high strain rate loading. Damage within the composite specimens is confirmed through pre- and post-mortem x-ray micro computed tomography imaging.
Show PACS
81.40.Lm Deformation, plasticity, and creep
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.F- Deformation and plasticity
62.20.fq Plasticity and superplasticity
62.20.mm Fracture
73.61.Wp Fullerenes and related materials

Crystal structure and epitaxy of Bi2Te3 films grown on Si

Jihwey Park, Yeong-Ah Soh, G. Aeppli, S. R. Bland, Xie-Gang Zhu, Xi Chen, Qi-Kun Xue, and Francois Grey

Appl. Phys. Lett. 101, 221910 (2012); http://dx.doi.org/10.1063/1.4768259 (5 pages) | Cited 1 time

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report comprehensive x-ray diffraction studies of the crystal structure and epitaxy of thin films of the topological insulator Bi2Te3 grown on Si (1 1 1). The films are single crystals of high crystalline quality, which strongly depend on that of their substrates, with in-plane epitaxial relationships of Bi2Te3 [2 1 −3 0] ‖ Si [1 −1 0] and Bi2Te3 [0 1 −1 0] ‖ Si [1 1 −2] along which the lattices of 1 × 3 Bi2Te3 and 2 × 2 Si supercells are well matched. As the samples age, we observe loss of crystalline Bi2Te3 film thickness accompanied with roughening of the crystalline interfaces, formation of new crystalline phases as well as compositional and structural modification of the Si substrate, consistent with the diffusion of Te into the Si substrate.
Show PACS
61.66.Fn Inorganic compounds
68.55.aj Insulators
68.35.Fx Diffusion; interface formation

Low-temperature grown graphene films by using molecular beam epitaxy

Meng-Yu Lin, Wei-Ching Guo, Meng-Hsun Wu, Pro-Yao Wang, Te-Huan Liu, Chun-Wei Pao, Chien-Cheng Chang, Si-Chen Lee, and Shih-Yen Lin

Appl. Phys. Lett. 101, 221911 (2012); http://dx.doi.org/10.1063/1.4768948 (4 pages)

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 °C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ap Fullerenes
61.48.Gh Structure of graphene
68.65.Pq Graphene films
78.67.Wj Optical properties of graphene
78.30.Na Fullerenes and related materials
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close