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26 Nov 2012

Volume 101, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 101, 221101 (2012); http://dx.doi.org/10.1063/1.4767646 (5 pages)

Mikhail A. Kats, Deepika Sharma, Jiao Lin, Patrice Genevet, Romain Blanchard, Zheng Yang, M. Mumtaz Qazilbash, D. N. Basov, Shriram Ramanathan, and Federico Capasso
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In-plane electronic confinement in superconducting LaAlO3/SrTiO3 nanostructures

D. Stornaiuolo, S. Gariglio, N. J. G. Couto, A. Fête, A. D. Caviglia, G. Seyfarth, D. Jaccard, A. F. Morpurgo, and J.-M. Triscone

Appl. Phys. Lett. 101, 222601 (2012); http://dx.doi.org/10.1063/1.4768936 (4 pages)

Online Publication Date: 27 November 2012

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We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO3/SrTiO3 interface. Bridges with lateral dimensions down to 500 nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO3/SrTiO3 interface.
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74.25.fc Electric and thermal conductivity
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
74.50.+r Tunneling phenomena; Josephson effects
74.78.Na Mesoscopic and nanoscale systems

An insight into voltage-biased superconducting quantum interference devices

Chao Liu, Yi Zhang, Michael Mück, Hans-Joachim Krause, Alex I. Braginski, Xiaoming Xie, Andreas Offenhäusser, and Mianheng Jiang

Appl. Phys. Lett. 101, 222602 (2012); http://dx.doi.org/10.1063/1.4768698 (4 pages) | Cited 1 time

Online Publication Date: 30 November 2012

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We experimentally studied two important parameters of helium-cooled superconducting quantum interference devices (SQUIDs) in the voltage bias mode: the dynamic resistance Rd and the flux-to-current transfer coefficient ∂i/∂Φ, with different junction shunt resistors RJ. We investigated a voltage-biased SQUID using the direct readout current-to-voltage converter scheme involving an operational amplifier. At higher RJ, the flux-to-voltage conversion coefficient ∂V/∂Φ becomes sufficiently large to effectively suppress the room-temperature amplifier's noise without any need for additional feedback circuits. The McCumber parameter limits the rise of ∂V/∂Φ. We discuss the performance of voltage-biased SQUIDs at different effective McCumber parameters.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.Le Amplifiers
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