APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Nov 2012

Volume 101, Issue 22, Articles (22xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 221101 (2012); http://dx.doi.org/10.1063/1.4767646 (5 pages)

Mikhail A. Kats, Deepika Sharma, Jiao Lin, Patrice Genevet, Romain Blanchard, Zheng Yang, M. Mumtaz Qazilbash, D. N. Basov, Shriram Ramanathan, and Federico Capasso
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Tunable wetting behavior of nanostructured poly(dimethylsiloxane) by plasma combination treatments

Nicolas J. Peter, Xiao-Sheng Zhang, Shi-Gan Chu, Fu-Yun Zhu, Helmut Seidel, and Hai-Xia Zhang

Appl. Phys. Lett. 101, 221601 (2012); http://dx.doi.org/10.1063/1.4768808 (4 pages) | Cited 1 time

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports on the tunable wetting behavior of poly(dimethylsiloxane) (PDMS) via the combination of nanostructuring and plasma treatment. The PDMS is first micro/nanostructured by an integrated casting process. Subsequently, an inductively coupled plasma is used to modify the siloxanes' surface chemistry. Sulfur hexafluoride, fluoroform, as well as octafluorocyclobutane plasma were applied to treat PDMS samples successively. By optimizing the treatment parameters, tunable wettability of the siloxane was observed, i.e., superhydrophilicity and superhydrophobicity. The stability of its wetting behavior has been demonstrated after 24 h. This stable and tunable wettability extends the applications of PDMS in microfluidic systems.
Show PACS
81.65.-b Surface treatments
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.16.-c Methods of micro- and nanofabrication and processing
68.08.Bc Wetting
68.35.bm Polymers, organics
52.77.-j Plasma applications

Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films

M. Schneider, A. Bittner, F. Patocka, M. Stöger-Pollach, E. Halwax, and U. Schmid

Appl. Phys. Lett. 101, 221602 (2012); http://dx.doi.org/10.1063/1.4768951 (4 pages)

Online Publication Date: 27 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In micro-/nanomachined devices and systems, aluminum nitride (AlN) thin films are widely used due to their piezoelectric properties. This work evaluates the potential of modifying the interface between the AlN thin film and the silicon (Si) wafer serving as bottom electrode for optimized crystallographic orientation and, hence, improved electrical and piezoelectric properties. The films were analyzed using temperature-dependant leakage current measurements, transmission electron microscopy, and x-ray diffraction. By preconditioning of the Si substrate surface applying sputter etching prior to film deposition, leakage current levels are substantially decreased and an increased (002) orientation of the AlN grains is observed.
Show PACS
73.61.Ey III-V semiconductors
77.65.-j Piezoelectricity and electromechanical effects
81.15.Cd Deposition by sputtering
81.65.Cf Surface cleaning, etching, patterning
68.55.ag Semiconductors
77.55.hd AlN

Probing buried organic-organic and metal-organic heterointerfaces by hard x-ray photoelectron spectroscopy

Masahiro Shibuta, Toyoaki Eguchi, Yoshio Watanabe, Jin-Young Son, Hiroshi Oji, and Atsushi Nakajima

Appl. Phys. Lett. 101, 221603 (2012); http://dx.doi.org/10.1063/1.4768940 (4 pages)

Online Publication Date: 29 November 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a nondestructive characterization method for buried hetero-interfaces for organic/organic and metal/organic systems using hard x-ray photoelectron spectroscopy (HAXPES) which can probe electronic states at depths deeper than ∼10 nm. A significant interface-derived signal showing a strong chemical interaction is observed for Au deposited onto a C60 film, while there is no such additional feature for copper phthalocyanine deposited onto a C60 film reflecting the weak interaction between the molecules in the latter case. A depth analysis with HAXPES reveals that a Au-C60 intermixed layer with a thickness of 5.1 nm is formed at the interface.
Show PACS
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
64.75.Ef Mixing
79.60.-i Photoemission and photoelectron spectra
81.70.Jb Chemical composition analysis, chemical depth and dopant profiling
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close