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3 Dec 2012

Volume 101, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 101, 233101 (2012); http://dx.doi.org/10.1063/1.4749281 (3 pages)

S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, and A. S. Sachrajda
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Comment on “Lifetime recovery in ultra-highly titanium-doped silicon for the implementation of an intermediate band material” [Appl. Phys. Lett. 94, 042115 (2009)]

A. Karoui

Appl. Phys. Lett. 101, 236101 (2012); http://dx.doi.org/10.1063/1.4766910 (2 pages)

Online Publication Date: 3 December 2012

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Abstract Unavailable
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.uf Ge and Si
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