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3 Dec 2012

Volume 101, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 101, 233101 (2012); http://dx.doi.org/10.1063/1.4749281 (3 pages)

S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, and A. S. Sachrajda
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Simulation of inhomogeneous magnetoelastic anisotropy in ferroelectric/ferromagnetic nanocomposites

Nicolas M. Aimon, Jiexi Liao, and C. A. Ross

Appl. Phys. Lett. 101, 232901 (2012); http://dx.doi.org/10.1063/1.4768958 (5 pages)

Online Publication Date: 3 December 2012

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The magnetic response of CoFe2O4/BiFeO3 (CFO/BFO) nanocomposite thin films, in which ferromagnetic CFO nanopillars are embedded in a ferroelectric BFO matrix, has been modeled by including the position-dependent magnetoelastic anisotropy of the CFO. A finite element simulation of the strain state of an arrangement of CFO pillars was performed in which the BFO matrix surrounding one or all of the pillars was subject to a piezoelectric strain. The strain transferred to the CFO pillars was calculated and transformed into a spatially varying magnetoelastic anisotropy in the CFO, and a micromagnetic model was then used to calculate the hysteresis of the pillar, which differed significantly from a macrospin model. The position-dependent anisotropy led to a complex reversal process and to a reorientation of the easy axis to the in-plane direction at sufficient applied electric fields.
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75.80.+q Magnetomechanical effects, magnetostriction
75.30.Gw Magnetic anisotropy
75.50.Cc Other ferromagnetic metals and alloys
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Unusual growth of polycrystalline oxide film induced by negative ion bombardment in the capacitively coupled plasma deposition

S. Takayanagi, T. Yanagitani, and M. Matsukawa

Appl. Phys. Lett. 101, 232902 (2012); http://dx.doi.org/10.1063/1.4769224 (3 pages)

Online Publication Date: 4 December 2012

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A polycrystalline film usually grows in its most densely packed plane parallel to the substrate plane. We demonstrated that the unusual crystalline growth can occur by using energetic negative ions generated in the magnetron capacitively coupled plasma deposition without using separated ion source. Negative ion energy and flux entering the substrate were quantitatively measured and compared with the preferential crystalline growth of unusual (11math0) orientation in ZnO films. Strong (11math0) orientation was found at the cathode erosion area where large amount of high energy negative ion of 170–250 eV was observed in low gas pressure of 0.1 Pa.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.ag Semiconductors
68.55.J- Morphology of films
81.15.Cd Deposition by sputtering

Intrinsically tunable 0.67BiFeO3-0.33BaTiO3 thin film bulk acoustic wave resonators

A. Vorobiev, S. Gevorgian, N. Martirosyan, M. Löffler, and E. Olsson

Appl. Phys. Lett. 101, 232903 (2012); http://dx.doi.org/10.1063/1.4769346 (5 pages)

Online Publication Date: 4 December 2012

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Intrinsically tunable 0.67BiFeO3−0.33BaTiO3 (BF–BT) thin film bulk acoustic wave resonators with record high tunability of 4.4% and effective electromechanical coupling coefficient of 10% are fabricated and analyzed. The analysis, based on the theory of the dc field induced piezoelectric effect with the mechanical loading by the electrodes taken into account, reveals that the enhanced parameters are associated with the inherently high BF–BT electrostriction coefficient, which is found to be 5.9 × 1010 m/F. The Q-factor of the BF–BT resonators is up to 220 at 4.1 GHz and is limited mainly by acoustic wave scattering at reflection from a relatively rough top interface.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Electric field-induced tetragonal to orthorhombic phase transitions in [110]c-oriented BaTiO3 single crystals

D. J. Franzbach, Y. J. Gu, L. Q. Chen, and K. G. Webber

Appl. Phys. Lett. 101, 232904 (2012); http://dx.doi.org/10.1063/1.4769368 (4 pages) | Cited 2 times

Online Publication Date: 5 December 2012

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Electric field-induced phase transitions in [110]c-oriented BaTiO3 single crystals were studied by macroscopic electrical measurements in the temperature range from 20 °C to 50 °C. Discontinuous, hysteretic jumps in the polarization and strain were observed, indicating a tetragonal ↔ orthorhombic phase transition. The critical electric field to induce the transition was found to shift to higher values with increasing temperature. The Landau-Devonshire theory was used to analyze the observed electric field-induced T ↔ O phase transitions.
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64.70.K- Solid-solid transitions
77.80.B- Phase transitions and Curie point
77.80.Jk Relaxor ferroelectrics
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Tunable self-biased magnetoelectric response in homogenous laminates

Yuan Zhou, Su Chul Yang, Daniel J. Apo, Deepam Maurya, and Shashank Priya

Appl. Phys. Lett. 101, 232905 (2012); http://dx.doi.org/10.1063/1.4769365 (5 pages) | Cited 1 time

Online Publication Date: 6 December 2012

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In this study, we demonstrate self-biased magnetoelectric effect in homogenous two-phase magnetostrictive-piezoelectric laminates. Our results illustrate the method for tuning the magnitude of self-bias effect and provide understanding behind the hysteretic changes. We model this phenomenon by considering the magnetization hysteresis with shape-induced demagnetization effect. The self-biased response was found to be directly related to the nature of magnetization and can be tuned by variation in demagnetization state and the resultant differential magnetic flux distribution. These results present significant advancement toward development of AC magnetic field sensor and magnetoelectric composite based on-chip devices by eliminating the need for DC bias.
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75.85.+t Magnetoelectric effects, multiferroics
77.84.Ek Niobates and tantalates
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

An improved magnetic field detection unit based on length-magnetized Terfenol-D and width-polarized ternary 0.35Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.30PbTiO3

Jie Jiao, Wei Wang, Lingying Li, Yuting Liu, Bo Ren, Hao Deng, Jianwei Chen, Chundong Xu, Wenning Di, Xiangyong Zhao, Haosu Luo, and Weiping Jing

Appl. Phys. Lett. 101, 232906 (2012); http://dx.doi.org/10.1063/1.4769904 (4 pages)

Online Publication Date: 6 December 2012

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A magnetoelectric laminate composite based on length-magnetized Terfenol-D alloy and width-polarized ternary 0.35Pb(In1/2Nb1/2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 single crystal has been developed and exhibits a giant magnetoelectric voltage coefficient of 1.7 V/Oe at low frequencies and 20 V/Oe at resonance frequency 84 020 Hz besides showing good linearity range of response in the field range of 1 pT-10 μT. Due to its small capacitance of 43 pF, a specially designed low-noise voltage follower was used to match the impedance. Based on the circuit, the detection limit of composite has been reached 1.9 pT/Hz1/2 at 1020 Hz and 300 fT/Hz1/2 at 84 020 Hz, respectively.
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07.55.-w Magnetic instruments and components
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.10.Fq Growth from melts; zone melting and refining
75.85.+t Magnetoelectric effects, multiferroics

Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

Shaoheng Cheng, Liwen Sang, Meiyong Liao, Jiangwei Liu, Masataka Imura, Hongdong Li, and Yasuo Koide

Appl. Phys. Lett. 101, 232907 (2012); http://dx.doi.org/10.1063/1.4770059 (5 pages) | Cited 1 time

Online Publication Date: 7 December 2012

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The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films on p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase δ-Ta2O5 film is achieved on diamond by annealing the amorphous Ta2O5 film deposited by a sputter-deposition technique. The electrical properties of the Ta2O5 thin films are investigated by fabricating metal-insulator-semiconductor (MIS) diodes. The leakage current of the MIS diode is as low as 10−8 A/cm2 for the as-deposited amorphous Ta2O5 film and 10−2 A/cm2 for the crystallized film, which is 108 and 102 times lower than that of the Schottky diode at a forward bias of −3 V, respectively. The dielectric constant of the amorphous Ta2O5 films is measured to be 16 and increases to 29 after annealing at 800  °C. Different current leakage mechanisms and charge trapping behaviors are proposed for the amorphous and crystallized Ta2O5 thin films.
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77.22.Ch Permittivity (dielectric function)
81.15.Cd Deposition by sputtering
81.40.Gh Other heat and thermomechanical treatments
68.55.A- Nucleation and growth
77.55.D- High-permittivity gate dielectric films
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