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3 Dec 2012

Volume 101, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 101, 233101 (2012); http://dx.doi.org/10.1063/1.4749281 (3 pages)

S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, and A. S. Sachrajda
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Correlation between interface energetics and open circuit voltage in organic photovoltaic cells

A. Wilke, J. Endres, U. Hörmann, J. Niederhausen, R. Schlesinger, J. Frisch, P. Amsalem, J. Wagner, M. Gruber, A. Opitz, A. Vollmer, W. Brütting, A. Kahn, and N. Koch

Appl. Phys. Lett. 101, 233301 (2012); http://dx.doi.org/10.1063/1.4769360 (4 pages) | Cited 4 times

Online Publication Date: 4 December 2012

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We have used ultraviolet and inverse photoemission spectroscopy to determine the transport gaps (Et) of C60 and diindenoperylene (DIP), and the photovoltaic gap (EPVG) of five prototypical donor/acceptor interfaces used in organic photovoltaic cells (OPVCs). The transport gap of C60 (2.5 ± 0.1) eV and DIP (2.55 ± 0.1) eV at the interface is the same as in pristine films. We find nearly the same energy loss of ca 0.5 eV for all material pairs when comparing the open circuit voltage measured for corresponding OPVCs and EPVG.
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85.60.-q Optoelectronic devices
84.60.Jt Photoelectric conversion
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The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors

Narae Kang, Biddut K. Sarker, and Saiful I. Khondaker

Appl. Phys. Lett. 101, 233302 (2012); http://dx.doi.org/10.1063/1.4769439 (4 pages)

Online Publication Date: 4 December 2012

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We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0–30/μm) to the Pd electrodes. The average mobility is increased three, six, and nine times for low, medium, and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices
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Tandem photovoltaic cells formed in single fullerene films by impurity doping

Norihiro Ishiyama, Masayuki Kubo, Toshihiko Kaji, and Masahiro Hiramoto

Appl. Phys. Lett. 101, 233303 (2012); http://dx.doi.org/10.1063/1.4769455 (3 pages) | Cited 2 times

Online Publication Date: 5 December 2012

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Tandem photovoltaic cells were formed in single fullerene films by doping with molybdenum oxide and cesium carbonate. A heavily doped n+p+-homojunction acted as an ohmic interlayer between the two pn-homojunction cells. The observed photovoltaic properties of the tandem cell were shown to be consistent with the energy band diagram mapped using a Kelvin probe.
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88.40.jp Multijunction solar cells
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Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

M. Rapisarda, G. Fortunato, A. Valletta, S. Jacob, M. Benwadih, R. Coppard, I. Chartier, and L. Mariucci

Appl. Phys. Lett. 101, 233304 (2012); http://dx.doi.org/10.1063/1.4769819 (4 pages)

Online Publication Date: 5 December 2012

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Bias stress instability has been investigated in printed p-channel organic thin film transistors. The observed instability is related to two mechanisms: one, dominating at low T and causing “mobile ions” like threshold voltage variations is probably due to creation/annihilation of acceptor-like states; the second one, causing charge-trapping like instability, dominates at high T. High drain voltage bias stress experiments, inducing device self-heating, present threshold voltage variations, suggest a channel temperature rise ranging from 50 to 60 °C. The results point out the role of self-heating on the bias-stress instability, which is related to a combination of bias and temperature conditions.
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85.30.Tv Field effect devices
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Energy level alignment at the interfaces between typical electrodes and nucleobases: Al/adenine/indium-tin-oxide and Al/thymine/indium-tin-oxide

Younjoo Lee, Hyunbok Lee, Soohyung Park, and Yeonjin Yi

Appl. Phys. Lett. 101, 233305 (2012); http://dx.doi.org/10.1063/1.4769438 (5 pages)

Online Publication Date: 6 December 2012

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We investigated the interfacial electronic structures of Al/adenine/indium-tin-oxide (ITO) and Al/thymine/ITO using in situ ultraviolet and x-ray photoemission spectroscopy and density functional theory calculations. Adenine shows both an interface dipole and level bending, whereas thymine shows only an interface dipole in contact with ITO. In addition, thymine possesses a larger ionization energy than adenine. These are understood with delocalized π states confirmed with theoretical calculations. For the interface between nucleobases and Al, both nucleobases show a prominent reduction of the electron injection barrier from Al to each base in accordance with a downward level shift.
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73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
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Immerse precipitation as an efficient protocol to optimize morphology and performance of organic solar cells

Lijian Zuo, Zhen Cao, Xiaolian Hu, Zhuowei Gu, Hongbin Pan, and Hongzheng Chen

Appl. Phys. Lett. 101, 233306 (2012); http://dx.doi.org/10.1063/1.4769454 (4 pages)

Online Publication Date: 6 December 2012

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We developed a film-forming processing method for morphology control and organic solar cells (OSCs) optimization. In this protocol, the processing solvent inside a wet active layer is removed by dripping a soaking solvent that is selectively soluble for the processing solvents onto the wet active layer film. By this method, OSCs based on diketopyrrolopyrrole containing copolymers: [6,6]-phenyl-C61-butyric acid methyl ester blend were fabricated. Devices processed by this treatment show a significantly increased efficiency by a factor of 3 compared to devices fabricated by the traditional spin-coating method (from 1.03% to 3.2%), which is mainly attributed to morphology improvements.
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88.40.J- Types of solar cells
88.40.H- Solar cells (photovoltaics)
61.41.+e Polymers, elastomers, and plastics
61.50.-f Structure of bulk crystals
81.30.Mh Solid-phase precipitation
68.55.am Polymers and organics
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MoO3/Ag/MoO3 anode in organic photovoltaic cells: Influence of the presence of a CuI buffer layer between the anode and the electron donor

M. Makha, L. Cattin, Y. Lare, L. Barkat, M. Morsli, M. Addou, A. Khelil, and J. C. Bernède

Appl. Phys. Lett. 101, 233307 (2012); http://dx.doi.org/10.1063/1.4769808 (3 pages) | Cited 1 time

Online Publication Date: 7 December 2012

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MoO3/Ag/MoO3 (MAM) multilayer structures (layers thickness 20 nm/10 nm/35 nm) are used as anode in CuPc/C60/Alq3/Al organic photovoltaic cells. The averaged transmittance (400 nm-800 nm) of these MoO3/Ag/MoO3 multilayer structures is 70% ± 2% and their sheet resistance is 3.5 ± 1.0 Ω/sq. When these multilayer structures are used as anode, the power conversion efficiency of the MoO3/Ag/MoO3/CuPc/C60/Alq3/Al cells is around 1%, this efficiency is increased of 50% when a thin CuI film (3 nm) is introduced at the interface between the anode and the organic film. This improvement is attributed to the templating effect of CuI on the CuPc molecules.
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88.40.hj Efficiency and performance of solar cells
88.40.jp Multijunction solar cells
88.40.jr Organic photovoltaics
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Reduced graphene oxide based flexible organic charge trap memory devices

Adila Rani, Ji-Min Song, Mi Jung Lee, and Jang-Sik Lee

Appl. Phys. Lett. 101, 233308 (2012); http://dx.doi.org/10.1063/1.4769990 (5 pages)

Online Publication Date: 7 December 2012

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A nonvolatile organic transistor memory device was developed using layer-by-layer assembly of 3-aminopropyltriethoxysilane (APTES) and solution-processed, reduced graphene oxide (rGO) as the charge trapping layer on flexible substrates. Reduction of graphene oxide and successful adsorption of the rGO on APTES-covered substrates were confirmed. The organic memory devices based on rGO exhibited reliable programmable memory operations, confirmed by program/erase operations, data retention, and endurance properties. These methods can potentially play a significant role in the fabrication of next-generation flexible nonvolatile memory devices based on graphene materials.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
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