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3 Dec 2012

Volume 101, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 101, 233101 (2012); http://dx.doi.org/10.1063/1.4749281 (3 pages)

S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, and A. S. Sachrajda
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Polarization dependent optical control of atomic arrangement in multilayer Ge-Sb-Te phase change materials

Kotaro Makino, Junji Tominaga, Alexander V. Kolobov, Paul Fons, and Muneaki Hase

Appl. Phys. Lett. 101, 232101 (2012); http://dx.doi.org/10.1063/1.4768785 (4 pages)

Online Publication Date: 3 December 2012

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We report the optical perturbation of atomic arrangement in the layered in GeTe/Sb2Te3 phase change memory material. To observe the structural change, the coherent A1 mode of GeTe4 local structure was investigated at various polarization angles of femtosecond pump pulses with the fluence at ≤ 78 μJ/cm2. p-polarization found to be more effective in inducing the A1 frequency shift that can be either reversible or irreversible depending on the pump fluence. The predominant origin of this shift is attributed to rearrangement of Ge atoms driven by anisotropic dissociation of the Ge-Te bonds along the [111] axis after the p-polarized pulse irradiation.
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63.22.Np Layered systems
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.47.J- Ultrafast spectroscopy (<1 psec)

P-type behavior of Sb doped ZnO from p-n-p memory structure

Jian Huang, Zonglin Li, Sheng Chu, and Jianlin Liu

Appl. Phys. Lett. 101, 232102 (2012); http://dx.doi.org/10.1063/1.4769097 (4 pages)

Online Publication Date: 3 December 2012

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Antimony (Sb) doped p-type ZnO was studied by using Sb-ZnO/ZnO/Sb-ZnO p-n-p structure. Secondary ion mass spectrometry result confirmed the formation of the structure. Rectifying current-voltage characteristics between Sb-ZnO and undoped ZnO layers were achieved, proving the p-n junction was formed. The p-type behavior from the p-n-p structure was studied by using the capacitance-voltage measurement and small signal model. The voltage operation led to the charging/discharging of the structure, showing nonvolatile memory effect. Very long retention time was achieved. This research suggests that p-type ZnO can be evaluated by a p-n-p structure, which could be promising for future nonvolatile memory applications.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
84.30.Sk Pulse and digital circuits
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs

Peter G. Burke, Lars Ismer, Hong Lu, Elan Frantz, Anderson Janotti, Chris G. Van de Walle, John E. Bowers, and Arthur C. Gossard

Appl. Phys. Lett. 101, 232103 (2012); http://dx.doi.org/10.1063/1.4769248 (4 pages)

Online Publication Date: 4 December 2012

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The electron concentration in dilute alloys of Er in GaAs, In0.53Ga0.47As, and InAs grown by molecular beam epitaxy is studied as a function of Er concentration and In content. Using first-principles calculations based on hybrid density functional theory, we attribute an observed increase in conduction electron concentration to Er incorporation on interstitial sites. Er also incorporates on substitutional sites where it is isovalent and electrically inactive. The formation energy of interstitial Er in InAs is significantly smaller than in GaAs, allowing for more electrically active Er in InAs. The results provide insight into characteristics of rare-earth elements as dopants in semiconductors.
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61.72.uj III-V and II-VI semiconductors
68.55.ag Semiconductors
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.jj Interstitials

Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

E. Gaubas, T. Ceponis, A. Jasiunas, A. Uleckas, J. Vaitkus, E. Cortina, and O. Militaru

Appl. Phys. Lett. 101, 232104 (2012); http://dx.doi.org/10.1063/1.4769370 (3 pages)

Online Publication Date: 4 December 2012

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The in situ examination of barrier capacitance charging, of generation and drift currents, and of carrier lifetime in Si structures during 25 MeV neutrons irradiation has been implemented to correlate radiation induced changes in carrier recombination, thermal release, and drift characteristics and to clarify their impact on detector performance. It has been shown that microwave probed photo-conductivity technique implemented in contact-less and distant manner can be a powerful tool for examination in wide dynamic range of carrier lifetime modified by radiation defects and for rather precise prediction of detector performance.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.40.+w Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
61.80.Hg Neutron radiation effects
61.82.Fk Semiconductors

Observation of momentum space semi-localization in Si-doped β-Ga2O3

P. Richard, T. Sato, S. Souma, K. Nakayama, H. W. Liu, K. Iwaya, T. Hitosugi, H. Aida, H. Ding, and T. Takahashi

Appl. Phys. Lett. 101, 232105 (2012); http://dx.doi.org/10.1063/1.4769109 (5 pages)

Online Publication Date: 4 December 2012

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We performed an angle-resolved photoemission spectroscopy study of Si-doped β-Ga2O3. We observed very small photoemission intensity near the Fermi level corresponding to non-dispersive states assigned to Si impurities. We show evidence for a quantization of these states that is accompanied by a confinement in the momentum space consistent with a real-space finite confinement observed in a previous scanning tunneling microscopy study. Our results suggest that this semi-localization in the conjugate spaces plays a crucial role in the electronic conduction of this material.
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71.20.Nr Semiconductor compounds
71.55.Ht Other nonmetals
79.60.Bm Clean metal, semiconductor, and insulator surfaces

Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

Christoph J. M. Stark, Theeradetch Detchprohm, Liang Zhao, Tanya Paskova, Edward A. Preble, and Christian Wetzel

Appl. Phys. Lett. 101, 232106 (2012); http://dx.doi.org/10.1063/1.4769442 (4 pages)

Online Publication Date: 5 December 2012

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Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06° to 2.24°), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electrical device performance. We find conditions leading to a large increase in light-output power over the virtually on-axis device and over planar sapphire references. The process is found suitable to enhance light extraction even without post-growth processing.
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85.60.Jb Light-emitting devices

Formation of arsenolite crystals at room temperature after very high dose arsenic implantation in silicon

Florian Meirer, Damiano Giubertoni, Evgeny Demenev, Lia Vanzetti, Salvatore Gennaro, Michele Fedrizzi, Giancarlo Pepponi, Apurva Mehta, Piero Pianetta, Georg Steinhauser, Vinayak Vishwanath, Majeed Foad, and Massimo Bersani

Appl. Phys. Lett. 101, 232107 (2012); http://dx.doi.org/10.1063/1.4769446 (4 pages)

Online Publication Date: 5 December 2012

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Spontaneous growth of arsenolite micro-crystals at room temperature after high fluence, low energy arsenic trihydride implantation in silicon was observed on the wafer surface after exposure to air. The crystals have been identified unambiguously by x-ray absorption and fluorescence spectroscopy. Thermal treatment easily sublimates the crystals at temperatures as low as 200 °C without any relevant in-diffusion of As into the substrate. The deposition of a thin As-rich layer under high fluence implantation conditions is suggested as possible precursor for crystal formation. The same layer can explain the anomalous retained dose increase often observed after annealing.
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61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
78.55.Ap Elemental semiconductors
78.70.Dm X-ray absorption spectra
81.05.Cy Elemental semiconductors

Room-temperature method for minimizing light-induced degradation in crystalline silicon

J. Lindroos, M. Yli-Koski, A. Haarahiltunen, and H. Savin

Appl. Phys. Lett. 101, 232108 (2012); http://dx.doi.org/10.1063/1.4769809 (3 pages) | Cited 1 time

Online Publication Date: 6 December 2012

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Although light-induced degradation (LID) in crystalline silicon is attributed to the formation of boron-oxygen recombination centers, copper contamination of silicon has recently been observed to result in similar degradation. As positively charged interstitial copper stays mobile at room temperature in silicon, we show that the bulk copper concentration can be reduced by depositing a large negative charge onto the wafer surface. Consequently, light-induced degradation is reduced significantly in both low- and high-resistivity boron-doped Czochralski-grown silicon.
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81.10.Fq Growth from melts; zone melting and refining
61.72.jj Interstitials
61.72.uf Ge and Si

Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices

Xinwei Wang, Omair I. Saadat, Bin Xi, Xiabing Lou, Richard J. Molnar, Tomás Palacios, and Roy G. Gordon

Appl. Phys. Lett. 101, 232109 (2012); http://dx.doi.org/10.1063/1.4770071 (4 pages)

Online Publication Date: 7 December 2012

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Polycrystalline, partially epitaxial Sc2O3 films were grown on AlGaN/GaN substrates by atomic layer deposition (ALD). With this ALD Sc2O3 film as the insulator layer, the Sc2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors showed excellent electrical performance with a high Ion/Ioff ratio of over 108 and a low subthreshold slope of 75 mV/dec. The UV/NH4OH surface treatment on AlGaN/GaN prior to ALD was found to be critical for achieving these excellent figures. In addition, the Sc2O3 dielectric is found to be negatively charged, which facilitates the enhancement-mode operation. While bare Sc2O3 suffers from moisture degradation, depositing a moisture blocking layer of ALD Al2O3 can effectively eliminate this effect.
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85.30.Tv Field effect devices
81.65.Rv Passivation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.aj Insulators
73.61.Ng Insulators
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