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3 Dec 2012

Volume 101, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 233101 (2012); http://dx.doi.org/10.1063/1.4749281 (3 pages)

S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, and A. S. Sachrajda
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4-fold enhancement in the critical current density of YBa2Cu3O7 films by practical ion irradiation

H. Matsui, H. Ogiso, H. Yamasaki, T. Kumagai, M. Sohma, I. Yamaguchi, and T. Manabe

Appl. Phys. Lett. 101, 232601 (2012); http://dx.doi.org/10.1063/1.4769836 (4 pages)

Online Publication Date: 4 December 2012

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We report an up-to-4-fold enhancement in the in-magnetic-field critical current density at 77 K of epitaxial YBa2Cu3O7 films on CeO2-buffered SrTiO3 substrates by 3-MeV Au2+ irradiation. This indicates that irradiation using an industrially practical ion beam, which generally has kinetic energy less than 5 MeV, can provide a substantial increase in the in-field current performance of high-temperature superconductor films. Transmission electron microscopy results show that point-like defects smaller than 6 nm in diameter were created in the films by the irradiation.
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74.25.Sv Critical currents
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures
61.72.J- Point defects and defect clusters
61.80.Jh Ion radiation effects

A method for determining the specific capacitance value of mesoscopic Josephson junctions

Sheng-Shiuan Yeh, Kuan-Wen Chen, Tao-Hsiang Chung, Dai-Yang Wu, Ming-Chou Lin, Jyh-Yang Wang, I-Lin Ho, Cen-Shawn Wu, Watson Kuo, and ChiiDong Chen

Appl. Phys. Lett. 101, 232602 (2012); http://dx.doi.org/10.1063/1.4769999 (4 pages)

Online Publication Date: 4 December 2012

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An approach for precise determination of capacitance values and energy level spacing of mesoscopic Josephson junctions is proposed. Quantized levels arising from plasma oscillation manifest themselves in the current peaks in the current-voltage characteristics of a nearby probe Josephson junction. From peak spacing, the specific capacitance of aluminum junctions is determined to be 35 fF/μm2. In addition, magnetic field dependence of quantum states can be described quantitatively by a theory that takes the effect of field induced surface current into account.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
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