APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

3 Dec 2012

Volume 101, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 233101 (2012); http://dx.doi.org/10.1063/1.4749281 (3 pages)

S. A. Studenikin, J. Thorgrimson, G. C. Aers, A. Kam, P. Zawadzki, Z. R. Wasilewski, A. Bogan, and A. S. Sachrajda
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Laura B. Ruppalt, Erin R. Cleveland, James G. Champlain, Sharka M. Prokes, J. Brad Boos, Doewon Park, and Brian R. Bennett

Appl. Phys. Lett. 101, 231601 (2012); http://dx.doi.org/10.1063/1.4768693 (5 pages) | Cited 2 times

Online Publication Date: 3 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 °C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbOx, decreased Sb, and increased GaOx content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.60.Jv Interfaces; heterostructures; nanostructures
79.60.Bm Clean metal, semiconductor, and insulator surfaces
Author Select

TiO2 nanofibrous interface development for Raman detection of environmental pollutants

D. Maznichenko, P. R. Selvaganapathy, K. Venkatakrishnan, and B. Tan

Appl. Phys. Lett. 101, 231602 (2012); http://dx.doi.org/10.1063/1.4769112 (5 pages)

Online Publication Date: 3 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Sensor development has been reliant on planar Au and Ag nanoparticle research. The current findings explored a unique 3-D network of crystalline TiO2 nanoparticles linked as nanofibers. In addition to the favorability of using TiO2 for chemical and bio-molecular sensing, the nanofiber network provides molecular diffusion control and an increased confocal volume signal. Controlled femtosecond laser synthesis is also demonstrated that directly impacts surface-enhanced Raman spectroscopy detection of two common environmentally harmful chemicals: bisphenol A and diclofenac sodium salt. These findings assert that 3-D nanofibrous network porosity optimization is crucial for Raman monitoring of drinking water.
Show PACS
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.55.Px Semiconductor lasers; laser diodes
82.80.-d Chemical analysis and related physical methods of analysis
92.60.Sz Air quality and air pollution

Chemical and structural investigations of the incorporation of metal manganese into ruthenium thin films for use as copper diffusion barrier layers

A. P. McCoy, P. Casey, J. Bogan, J. G. Lozano, P. D. Nellist, and G. Hughes

Appl. Phys. Lett. 101, 231603 (2012); http://dx.doi.org/10.1063/1.4769229 (4 pages) | Cited 1 time

Online Publication Date: 4 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The incorporation of manganese into a 3 nm ruthenium thin-film is presented as a potential mechanism to improve its performance as a copper diffusion barrier. Manganese (∼1 nm) was deposited on an atomic layer deposited Ru film, and the Mn/Ru/SiO2 structure was subsequently thermally annealed. X-ray photoelectron spectroscopy studies reveal the chemical interaction of Mn with the SiO2 substrate to form manganese-silicate (MnSiO3), implying the migration of the metal through the Ru film. Electron energy loss spectroscopy line profile measurements of the intensity of the Mn signal across the Ru film confirm the presence of Mn at the Ru/SiO2 interface.
Show PACS
81.05.Bx Metals, semimetals, and alloys
81.40.Gh Other heat and thermomechanical treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.20.Uv Electron energy loss spectroscopy
79.60.Dp Adsorbed layers and thin films

Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces

A. Annadi, A. Putra, A. Srivastava, X. Wang, Z. Huang, Z. Q. Liu, T. Venkatesan, and Ariando

Appl. Phys. Lett. 101, 231604 (2012); http://dx.doi.org/10.1063/1.4768932 (4 pages)

Online Publication Date: 4 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report evolution of the two-dimensional electron gas behavior at the NdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3 overlayer. The samples with a thicker NdAlO3 show strong localizations at low temperatures and the degree of localization is found to increase with the NdAlO3 thickness. The T−1/3 temperature dependence of the sheet resistance at low temperatures and the magnetoresistance study reveal that the conduction is governed by a two-dimensional variable range hopping mechanism in this strong localized regime. We attribute this thickness dependence of the transport properties of the NdAlO3/SrTiO3 interfaces to the interface strain induced by the overlayers.
Show PACS
73.63.-b Electronic transport in nanoscale materials and structures
72.20.Ee Mobility edges; hopping transport
72.20.My Galvanomagnetic and other magnetotransport effects

Manipulation of giant Faraday rotation in graphene metasurfaces

Arya Fallahi and Julien Perruisseau-Carrier

Appl. Phys. Lett. 101, 231605 (2012); http://dx.doi.org/10.1063/1.4769095 (4 pages)

Online Publication Date: 4 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Faraday rotation is a fundamental magneto-optical phenomenon used in various optical control and magnetic field sensing techniques. Recently, it was shown that a giant Faraday rotation can be achieved in the low-THz regime by a single monoatomic graphene layer. Here, we demonstrate that this exceptional property can be manipulated through adequate nano-patterning, notably achieving giant rotation up to 6THz with features no smaller than 100 nm. The effect of the periodic patterning on the Faraday rotation is predicted by a simple physical model, which is then verified and refined through accurate full-wave simulations.
Show PACS
78.67.Wj Optical properties of graphene
81.16.Rf Micro- and nanoscale pattern formation
78.20.Ls Magneto-optical effects

An accurate determination of the surface energy of solid selenium

G. Guisbiers, S. Arscott, and R. Snyders

Appl. Phys. Lett. 101, 231606 (2012); http://dx.doi.org/10.1063/1.4769358 (3 pages)

Online Publication Date: 5 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Selenium is currently a key element for developing nano and micro-technologies. Nevertheless, the surface energy of solid selenium (γSe) reported in the literature is still questionable. In this work, we have measured γSe = 0.291 ± 0.025 J/m2 at 293 K using the sessile drop technique with different probe liquids, namely ethylene glycol, de-ionized water, mercury, and gallium. This value is in excellent agreement with theoretical predictions.
Show PACS
68.35.Md Surface thermodynamics, surface energies

Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor

S. Toyoda, T. Shinohara, H. Kumigashira, M. Oshima, and Y. Kato

Appl. Phys. Lett. 101, 231607 (2012); http://dx.doi.org/10.1063/1.4769818 (4 pages)

Online Publication Date: 5 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have investigated band discontinuities and chemical structures of Al2O3 gate insulator films on n-type GaN semiconductor by photoemission and x-ray absorption spectroscopy. It is found that the solid phase epitaxy at the GaN crystal during annealing procedures at 800 °C leads to phase transformation of Al2O3 films from amorphous to crystalline. Changes in crystallographic structures closely correlate with the significant increase in conduction band discontinuity at the Al2O3/GaN interface, which suggests that epitaxial Al2O3 films on GaN semiconductor, free from grain boundaries of Al2O3 polycrystalline, hold the potential for high insulation performance.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Nk Insulators
79.60.Bm Clean metal, semiconductor, and insulator surfaces
64.70.dg Crystallization of specific substances
68.55.-a Thin film structure and morphology

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement

M. Matys, B. Adamowicz, and T. Hashizume

Appl. Phys. Lett. 101, 231608 (2012); http://dx.doi.org/10.1063/1.4769815 (4 pages) | Cited 1 time

Online Publication Date: 6 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We developed a method for determining of the deep donor-like interface state density distribution Dit(E) at the insulator/wide bandgap semiconductor interface in metal/insulator/semiconductor structures from the measurements of photocapacitance vs. ultraviolet light intensity CL(Φ). From the comparison of theoretical and experimental CL(Φ) curves we obtained the continuous donor Dit(E) in the energy range between 0.15 eV and 1 eV from the valence band top for a metal/Al2O3/n-GaN device. In addition, the acceptor-like interface state Dit(E) in the upper part of the bandgap was determined from the capacitance-voltage method.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.40.+w Photoconduction and photovoltaic effects

Quantum capacitance in topological insulators under strain in a tilted magnetic field

M. Tahir and U. Schwingenschlögl

Appl. Phys. Lett. 101, 231609 (2012); http://dx.doi.org/10.1063/1.4770000 (4 pages)

Online Publication Date: 6 December 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Topological insulators exhibit unique properties due to surface states of massless Dirac fermions with conserved time reversal symmetry. We consider the quantum capacitance under strain in an external tilted magnetic field and demonstrate a minimum at the charge neutrality point due to splitting of the zeroth Landau level. We also find beating in the Shubnikov de Haas oscillations due to strain, which originate from the topological helical states. Varying the tilting angle from perpendicular to parallel washes out these oscillations with a strain induced gap at the charge neutrality point. Our results explain recent quantum capacitance and transport experiments.
Show PACS
71.70.Di Landau levels
72.20.My Galvanomagnetic and other magnetotransport effects
73.20.At Surface states, band structure, electron density of states
05.30.Fk Fermion systems and electron gas
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close