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24 Dec 2012

Volume 101, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 101, 263501 (2012); http://dx.doi.org/10.1063/1.4772532 (4 pages)

Youngki Yoon and Sayeef Salahuddin
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Dissipative transport in rough edge graphene nanoribbon tunnel transistors

Youngki Yoon and Sayeef Salahuddin

Appl. Phys. Lett. 101, 263501 (2012); http://dx.doi.org/10.1063/1.4772532 (4 pages) | Cited 1 time

Online Publication Date: 26 December 2012

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We have studied quantum transport in graphene nanoribbon tunnel field-effect transistors. Unlike other studies on similar structures, we have included dissipative processes induced by inelastic electron-phonon scattering and edge roughness in the nanoribbon self-consistently within a non-equilibrium transport simulation. Our results show that the dissipative scattering imposes a limit to the minimum OFF current and a minimum subthreshold swing that can be obtained even for long channel lengths where direct source-drain tunneling is inhibited. The edge roughness, in the presence of dissipative scattering, somewhat surprisingly, shows a classical behavior where it mostly reduces the maximum ON current achievable in this structure.
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85.30.Tv Field effect devices
73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Broadband asymmetric acoustic transmission in a gradient-index structure

Rui-Qi Li, Bin Liang, Yong Li, Wei-Wei Kan, Xin-Ye Zou, and Jian-Chun Cheng

Appl. Phys. Lett. 101, 263502 (2012); http://dx.doi.org/10.1063/1.4773481 (4 pages)

Online Publication Date: 26 December 2012

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We propose a scheme of realizing broadband asymmetric acoustic transmission using gradient-index structure, and demonstrate an implementation utilizing phononic-crystal-based metamaterials which can realize an idealized model with desired parameters. The asymmetric transmission is valid within a remarkably broad frequency range. This phenomenon stems from the break of the geometric symmetry of wave trajectories along two opposite directions, essentially different from the mechanisms of previous designs. The numerical results agree well with the analytical predictions using acoustic ray theory. Our design may have potential applications in many fields such as ultrasonic therapy and noise control.
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62.65.+k Acoustical properties of solids
43.20.-f General linear acoustics

Bipolar snapback in junctionless transistors for capacitorless dynamic random access memory

Mukta Singh Parihar, Dipankar Ghosh, G. Alastair Armstrong, and Abhinav Kranti

Appl. Phys. Lett. 101, 263503 (2012); http://dx.doi.org/10.1063/1.4773055 (4 pages) | Cited 1 time

Online Publication Date: 27 December 2012

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In this work, we analyze the snapback effect and extract the effective bipolar current gain in junctionless nanotransistors. The optimal electron and hole concentrations required to trigger and sustain bipolar snapback in junctionless transistors have been evaluated. The occurrence of snapback at lower drain bias (≅ 2 V) in junctionless devices in comparison to conventional inversion mode transistors demonstrates the enormous potential for static power reduction in capacitorless dynamic random access memories. High values (40–70) of effective bipolar current gain achieved in optimally designed junctionless transistors can be utilized to improve the sensing margin for dynamic memories.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell

M. Ziegler, M. Oberländer, D. Schroeder, W. H. Krautschneider, and H. Kohlstedt

Appl. Phys. Lett. 101, 263504 (2012); http://dx.doi.org/10.1063/1.4773300 (5 pages)

Online Publication Date: 27 December 2012

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A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device. Hysteretic current-voltages including a resistance storage capability were observed. These experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device (especially for reconfigurable logic, cross-bar arrays, and neuromorphic circuits) and is basically compatible with current Si-fabrication technology. The obvious trade-off between a memristive device based on a state-of-the-art silicon process technology and power consumption concerns will be discussed.
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84.30.Sk Pulse and digital circuits
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.30.Tv Field effect devices

Morphology control of nanohelix by electrospinning

Guoqing Chang, Guoxia Song, Jian Yang, Runsheng Huang, Alina Kozinda, and Jianyi Shen

Appl. Phys. Lett. 101, 263505 (2012); http://dx.doi.org/10.1063/1.4773365 (3 pages)

Online Publication Date: 27 December 2012

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We developed a simple approach to design and fabricate precisely controlled coiled nanofibers via the micromanufacture of electrospun nanofibers. The fabrication set-up was specially designed so that one stream of polyvinyl pyrrolidone (PVP) sol with ferric nitrate was electrospun into a fiber bundle. This bundle acted as an axis that was collected between two opposite rotating needles while another stream of PVP sol, containing copper nitrate, was electrospun around the fiber bundle axis to form a coil. By altering the elements in the precursor solution, copper microsolenoids with magnetite (Fe3O4) cores were fabricated followed by annealing and deoxidation.
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81.16.-c Methods of micro- and nanofabrication and processing
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

E. S. M. Goh, H. Y. Yang, Z. J. Han, T. P. Chen, and K. Ostrikov

Appl. Phys. Lett. 101, 263506 (2012); http://dx.doi.org/10.1063/1.4773367 (5 pages)

Online Publication Date: 28 December 2012

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Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.
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85.60.Jb Light-emitting devices
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