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24 Dec 2012

Volume 101, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 101, 263501 (2012); http://dx.doi.org/10.1063/1.4772532 (4 pages)

Youngki Yoon and Sayeef Salahuddin
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Layer-by-layer processed high-performance polymer solar cells

Hui Li and Jizheng Wang

Appl. Phys. Lett. 101, 263901 (2012); http://dx.doi.org/10.1063/1.4773515 (5 pages) | Cited 1 time

Online Publication Date: 26 December 2012

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Layer-by-layer (LL) process has great potential in achieving high-performance polymer solar cells (PSCs) due to its advantage in realizing p-i-n like structure. LL method is attracting more and more interests in fabricating PSCs, and power conversion efficiency (PCE) of LL processed PSCs has been greatly improved to over 5% recently. In this paper, by employing LL approach, we fabricated polymer photovoltaic devices with poly(3-hexylthiophene) (P3HT) as donor and four different fullerenes as acceptor. PCE of 6.48% was achieved. Performances of the LL processed devices are comparatively better than that of their corresponding traditional bulk-heterojunction devices.
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88.40.jr Organic photovoltaics

Schottky-barrier solar cell based on layered semiconductor tungsten disulfide nanofilm

Mariyappan Shanmugam, Tanesh Bansal, Chris A. Durcan, and Bin Yu

Appl. Phys. Lett. 101, 263902 (2012); http://dx.doi.org/10.1063/1.4773525 (5 pages)

Online Publication Date: 27 December 2012

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We demonstrated Schottky-barrier solar cell using layer-structured semiconductor tungsten disulfide (WS2) nanofilm (NF) as the photo-active material. WS2 NFs were synthesized by chemical-vapor-deposition initiated on the surface of tungsten. The growth of WS2 NF was confirmed by Raman signature peaks representing active modes of E12g (351.5 cm−1) for in-plane and A1g (420.1 cm−1) for out-of-plane atomic vibrations, respectively. The ITO/WS2/Au Schottky-barrier solar cell was demonstrated by a layer-enabled assembling process, showing a photo-conversion efficiency of 1.7% and effective photon absorption in the wavelength range of 350 nm–950 nm. The Mott-Schottky characteristic suggests low density of bulk and interface defects in WS2 NF attributed to surfaces with negligible amount of dangling bonds which is the essential nature of layered semiconductors.
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88.40.J- Types of solar cells
88.40.hj Efficiency and performance of solar cells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Kk Junction diodes
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