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9 Jul 2012

Volume 101, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 101, 023101 (2012); http://dx.doi.org/10.1063/1.4731792 (4 pages)

Feng Wang, Ayan Chakrabarty, Fred Minkowski, Kai Sun, and Qi-Huo Wei
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Magnetoelectric coupling in nanocrystalline Pb0.82La0.18TiO3

Lin Ju, Jifan Hu, Li Sun, Minglei Zhao, Yongjia Zhang, Hongwei Qin, and Liangmo Mei

Appl. Phys. Lett. 101, 022901 (2012); http://dx.doi.org/10.1063/1.4732803 (5 pages) | Cited 1 time

Online Publication Date: 9 July 2012

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The combined effect of Pb vacancies and La dopant can induce ferromagnetism below 75 K for Pb0.82La0.18TiO3 plates annealed at 700,1000, and 1200 °C for 1 h. Pb0.82La0.18TiO3 plates annealed at 1000 °C for 1 h show the coexistence of ferromagnetism resulting from oxygen vacancies at/near surfaces of nanograins and ferroelectricity near room temperature. Under application of magnetic field, the dielectric constant decreases and the ferroelectric transition temperature shifts to high temperature for Pb0.82La0.18TiO3 multiferroic plates. In addition, the electric field treatment leads to an enormous enhancement of saturation magnetization for Pb0.82La0.18TiO3 multiferroic plates, showing a strong magnetoelectric coupling.
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75.85.+t Magnetoelectric effects, multiferroics
77.80.B- Phase transitions and Curie point
75.50.Dd Nonmetallic ferromagnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.22.Ch Permittivity (dielectric function)
61.72.jd Vacancies

Strong enhancement of magnetoelectric coupling in Dy3+ doped HoMnO3

J. Magesh, P. Murugavel, R. V. K. Mangalam, K. Singh, Ch. Simon, and W. Prellier

Appl. Phys. Lett. 101, 022902 (2012); http://dx.doi.org/10.1063/1.4733367 (4 pages) | Cited 2 times

Online Publication Date: 9 July 2012

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The magnetoelectric effect in Ho0.9Dy0.1MnO3 is found 31 times stronger than HoMnO3 which could be due to strong lattice frustration arises out of the structural distortion on doping. The TN observed from magnetic measurement reveals a double peak corresponding to the in-plane and inter-planar ordering leading to assignment of Γ4 structure. The antiferromagnetic transition at TN indeed drives dielectric transition mediated by the lattice strain whereas at the TSR, lattice strain drives the spin reorientation of Mn3+. In contrary to the long held belief, the magnetic structure changes from Γ4 to Γ1 at TSR instead of Γ4 to Γ3.
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75.85.+t Magnetoelectric effects, multiferroics
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.30.Ds Spin waves
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
81.40.Lm Deformation, plasticity, and creep

Ultralow equivalent magnetic noise in a magnetoelectric Metglas/Mn-doped Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

Yaojin Wang, Junqi Gao, Menghui Li, D. Hasanyan, Ying Shen, Jiefang Li, D. Viehland, and Haosu Luo

Appl. Phys. Lett. 101, 022903 (2012); http://dx.doi.org/10.1063/1.4733963 (4 pages) | Cited 3 times

Online Publication Date: 10 July 2012

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An ultralow equivalent magnetic noise of 6.2 pT/√Hz at 1 Hz was obtained in a bimorph heterostructure sensor unit consisting of longitudinal-magnetized Metglas layers and a transverse-poled 1 mol. % Mn-doped Pb(Mg1/3Nb2/3)O3-29PbTiO3 (PMN-PT) single crystal. Furthermore, the equivalent magnetic noise was ≤1 pT/√Hz at 10 Hz. Compared with previously reported multi-push-pull configuration Metglas/PMN-PT sensor units, the current heterostructure exhibits a higher magnetoelectric coefficient of 61.5 V/(cm × Oe), a similar equivalent magnetic noise at 1 Hz and a lower noise floor at several hertz range. The ultralow equivalent magnetic noise in this sensor unit is due to the low tangent loss and ultrahigh piezoelectric properties of Mn-doped PMN-PT single crystals.
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77.55.Nv Multiferroic/magnetoelectric films
75.85.+t Magnetoelectric effects, multiferroics
77.65.-j Piezoelectricity and electromechanical effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Negative capacitance induced by redistribution of oxygen vacancies in the fatigued BiFeO3-based thin film

Qingqing Ke, Xiaojie Lou, Haibo Yang, Amit Kumar, Kaiyang Zeng, and John Wang

Appl. Phys. Lett. 101, 022904 (2012); http://dx.doi.org/10.1063/1.4733982 (4 pages) | Cited 1 time

Online Publication Date: 10 July 2012

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The capacitance dispersion in La and Mg co-substituted BiFeO3 thin film has been studied at different stages of polarization switching. A negative capacitance (NC) behavior is observed in the sample that is fatigued above 109 switching cycles. The origin of the NC is investigated through analyzing relaxation processes and charge transport kinetics by admittance spectroscopy. An activation energy of ∼0.6 eV and a zero field mobility μ0 = 5.33±0.02×10−13m2/Vs are thus obtained. A physical mechanism is proposed to explain this behavior. It involves a redistribution of oxygen vacancies, which are trapped at the film/electrode interface during the fatigue process.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
61.72.jd Vacancies
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
77.22.Gm Dielectric loss and relaxation
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.me Fatigue

Controlled growth of epitaxial BiFeO3 films using self-assembled BiFeO3-CoFe2O4 multiferroic heterostructures as a template

Yanxi Li, Yaodong Yang, Jianjun Yao, Ravindranath Viswan, Zhiguang Wang, Jiefang Li, and D. Viehland

Appl. Phys. Lett. 101, 022905 (2012); http://dx.doi.org/10.1063/1.4734508 (5 pages) | Cited 2 times

Online Publication Date: 11 July 2012

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The growth mechanism of a BiFeO3 layer deposited on self assembled (0.65) BiFeO3-(0.35) CoFe2O4 (BFO-CFO) composite thin films was studied. Epitaxial and self-assembled BFO-CFO thin films were deposited on SrTiO3 (111) substrates by pulsed laser deposition and were subsequently used as a seed layer for the deposition of an additional BFO layer. x-ray line scans showed the heterostructures were highly epitaxial. Cross-sectional scanning electron microscopy and focused ion beam images revealed the top BFO layer grew preferentially from BFO nanopillars in the BFO-CFO thin films, thus, demonstrating controlled growth. The multiferroic properties of this new nanostructure were then studied.
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81.16.Dn Self-assembly
81.16.Mk Laser-assisted deposition
77.55.Nv Multiferroic/magnetoelectric films
81.15.Fg Pulsed laser ablation deposition

Tunneling electroresistance effect in Pt/MgO/Pt/PbTiO3/Pt ferroelectric tunnel junctions

Zhijun Ma, Tianjin Zhang, Ruikun Pan, Kun Liang, Duofa Wang, Jingang Wang, Jinzhao Wang, Juan Jiang, Yajun Qi, and Huifang Chu

Appl. Phys. Lett. 101, 022906 (2012); http://dx.doi.org/10.1063/1.4734513 (5 pages)

Online Publication Date: 11 July 2012

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Tunneling electroresistance (TER) effect was investigated in Pt/MgO/Pt/PbTiO3/Pt ferroelectric tunnel junctions (FTJs) theoretically. Compared to Pt/MgO/PbTiO3/Pt FTJs with the same composite barrier thickness (unit cells), FTJs with a thicker Pt interlayer (2 ∼ 3 unit cells) could provide 1 ∼ 6 orders of magnitude improvement in the TER ratio in a wide range of polarization. Resonant tunneling effect and/or enhanced asymmetry of the potential energy profile induced by the resonant-tunneling structure of MgO/Pt/PbTiO3 in Pt/MgO/Pt/PbTiO3/Pt FTJs is responsible for the TER improvement.
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73.40.Rw Metal-insulator-metal structures
77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity

Differential scanning calorimeter and infrared imaging for electrocaloric characterization of poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

Gael Sebald, Laurence Seveyrat, Jean-Fabien Capsal, Pierre-Jean Cottinet, and Daniel Guyomar

Appl. Phys. Lett. 101, 022907 (2012); http://dx.doi.org/10.1063/1.4734924 (3 pages) | Cited 1 time

Online Publication Date: 12 July 2012

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Electrocaloric properties of poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) [P(VDF-TrFE-CFE)] terpolymer were determined by two methods. A modified differential scanning calorimeter measures the entropy variation when applying an electric field under isothermal conditions. Alternative technique consists of an infrared imaging camera that gives direct information on temperature variation in pseudo-adiabatic condition. Both techniques give similar results with a heat capacity of 1500 J/(kg K). For an electric field of 80 V/μm, entropy variation was measured at 15.1 J/(kg K) and a temperature variation of 2.75 K. High frequency measurement is possible using infrared imaging, and a strong frequency dependence of the electrocaloric effect was observed.
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77.70.+a Pyroelectric and electrocaloric effects
77.55.Kt Pyroelectric films
42.79.Pw Imaging detectors and sensors
61.41.+e Polymers, elastomers, and plastics

Enhanced magnetoelectric effect in self-stressed multi-push-pull mode Metglas/Pb(Zr,Ti)O3/Metglas laminates

Menghui Li, Yaojin Wang, Junqi Gao, Jiefang Li, and D. Viehland

Appl. Phys. Lett. 101, 022908 (2012); http://dx.doi.org/10.1063/1.4737179 (3 pages) | Cited 3 times

Online Publication Date: 13 July 2012

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Two methods to effectively induce self-stress on Metglas/Pb(Zr,Ti)O3/Metglas laminate are presented: (i) applying a dc magnetic field to the Metglas layers or (ii) applying a dc electric field to the core piezoelectric composites. An optimum self-stress enhances the magnetoelectric (ME) effect in the laminates. With a 20 Oe dc magnetic bias, the value of αME for the self-stressed laminate was enhanced to 31.4 V/cm · Oe, which was by a factor of 1.24× compared to the laminate without self-stress. Furthermore, the equivalent magnetic noise floor was reduced by the self-stress at low frequencies.
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75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films
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