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9 Jul 2012

Volume 101, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 101, 023101 (2012); http://dx.doi.org/10.1063/1.4731792 (4 pages)

Feng Wang, Ayan Chakrabarty, Fred Minkowski, Kai Sun, and Qi-Huo Wei
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High-quality surface passivation of silicon using native oxide and silicon nitride layers

Zahidur R. Chowdhury, Kevin Cho, and Nazir P. Kherani

Appl. Phys. Lett. 101, 021601 (2012); http://dx.doi.org/10.1063/1.4733336 (4 pages) | Cited 1 time

Online Publication Date: 9 July 2012

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We report on the attainment of high quality surface passivation of crystalline silicon using facile native oxide and plasma enhanced chemical vapour deposition SiNx. Using systematic measurements of excess carrier density dependent minority carrier lifetime, it is observed that the inferred interface defect density decreases with increasing native oxide thickness while the interface charge density remains unchanged with thickness, which ranges from 0.2 Å to 10 Å. A surface recombination velocity of 8 cm/s is attained corresponding to a native oxide layer thickness of ∼10 Å. Similar chemically grown oxide layer followed by SiNx deposition is shown to yield comparable passivation, indicating practical viability of the passivation scheme.
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81.65.Rv Passivation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.25.+i Surface conductivity and carrier phenomena
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Thickness effects on the magnetic and electrical transport properties of highly epitaxial LaBaCo2O5.5+δ thin films on MgO substrates

Chunrui Ma, Ming Liu, Gregory Collins, Jian Liu, Yamei Zhang, Chonglin Chen, Jie He, Jiechao Jiang, and Efstathios I. Meletis

Appl. Phys. Lett. 101, 021602 (2012); http://dx.doi.org/10.1063/1.4734386 (4 pages) | Cited 2 times

Online Publication Date: 10 July 2012

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The transport properties of double perovskite LaBaCo2O5.5+δ thin films with different thicknesses were systemically studied. A thin (7 nm in thickness), disordered LaBaCo2O5.5+δ layer was formed at the interface between the film and substrate. The films had a typical semiconductor behavior with antiferromagnetic and ferromagnetic behavior coexisting at low temperature. Although the Curie temperature was independent of the film thickness, the coercive fields and magnetizations increase with increasing the film thickness. An ultra large magnetoresistance effect value of about 44% was obtained at 60 K for the film of 82 nm.
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68.55.-a Thin film structure and morphology
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order
77.80.-e Ferroelectricity and antiferroelectricity

Epitaxial graphene on single domain 3C-SiC(100) thin films grown on off-axis Si(100)

A. Ouerghi, A. Balan, C. Castelli, M. Picher, R. Belkhou, M. Eddrief, M. G. Silly, M. Marangolo, A. Shukla, and F. Sirotti

Appl. Phys. Lett. 101, 021603 (2012); http://dx.doi.org/10.1063/1.4734396 (5 pages) | Cited 2 times

Online Publication Date: 11 July 2012

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The current process of growing graphene by thermal decomposition of 3C-SiC(100) on silicon is technologically attractive. Here, we study epitaxial graphene on single domain 3C-SiC films on off-axis Si(100). The structural and electronic properties of such graphene layers are explored by atomic force microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. Using low energy electron diffraction, we show that graphene exhibits single planar domains. Near-edge x-ray absorption fine structure is used to characterize the sample, which confirms that the graphene layers present sp2 hybridization and are homogeneously parallel to the substrate surface.
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68.55.ap Fullerenes
68.55.J- Morphology of films
61.48.Gh Structure of graphene
73.22.Pr Electronic structure of graphene
78.67.Wj Optical properties of graphene
78.30.Na Fullerenes and related materials
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Ultrafast carrier phonon dynamics in NaOH-reacted graphite oxide film

Dongwook Lee, Xingquan Zou, Xi Zhu, J. W. Seo, Jacqueline M. Cole, Federica Bondino, Elena Magnano, Saritha K. Nair, and Haibin Su

Appl. Phys. Lett. 101, 021604 (2012); http://dx.doi.org/10.1063/1.4736572 (5 pages)

Online Publication Date: 12 July 2012

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NaOH-reacted graphite oxide film was prepared by decomposing epoxy groups in graphite oxide into hydroxyl and -ONa groups with NaOH solution. Ultrafast carrier dynamics of the sample were studied by time-resolved transient differential reflection (ΔR/R). The data show two exponential relaxation processes. The slow relaxation process ( ∼ 2ps) is ascribed to low energy acoustic phonon mediated scattering. The electron-phonon coupling and first-principles calculation results demonstrate that -OH and -ONa groups in the sample are strongly coupled. Thus, we attribute the fast relaxation process ( ∼ 0.17ps) to the coupling of hydroxyl and -ONa groups in the sample.
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63.20.kd Phonon-electron interactions
68.55.aj Insulators
78.47.jg Time resolved reflection spectroscopy
62.65.+k Acoustical properties of solids
71.38.-k Polarons and electron-phonon interactions
78.66.Tr Fullerenes and related materials

Adsorption of silicon on Au(110): An ordered two dimensional surface alloy

Hanna Enriquez, Andrew Mayne, Abdelkader Kara, Sébastien Vizzini, Silvan Roth, Boubekeur Lalmi, Ari P Seitsonen, Bernard Aufray, Thomas Greber, Rachid Belkhou, Gérald Dujardin, and Hamid Oughaddou

Appl. Phys. Lett. 101, 021605 (2012); http://dx.doi.org/10.1063/1.4735310 (5 pages) | Cited 1 time

Online Publication Date: 13 July 2012

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We report on experimental evidence for the formation of a two dimensional Si/Au(110) surface alloy. In this study, we have used a combination of scanning tunneling microscopy, low energy electron diffraction, Auger electron spectroscopy, and ab initio calculations based on density functional theory. A highly ordered and stable Si-Au surface alloy is observed subsequent to growth of a sub-monolayer of silicon on an Au(110) substrate kept above the eutectic temperature.
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68.43.Mn Adsorption kinetics
79.20.Fv Electron impact: Auger emission
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Epitaxial growth of Ti3SiC2 thin films with basal planes parallel or orthogonal to the surface on α-SiC

A. Drevin-Bazin, J. F. Barbot, M. Alkazaz, T. Cabioch, and M. F. Beaufort

Appl. Phys. Lett. 101, 021606 (2012); http://dx.doi.org/10.1063/1.4737018 (3 pages) | Cited 1 time

Online Publication Date: 13 July 2012

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The growth of Ti3SiC2 thin films were studied onto α-SiC substrates differently oriented by thermal annealing of TiAl layers deposited by magnetron sputtering. For any substrate’s orientation, transmission electron microscopy coupled with x-ray diffraction showed the coherent epitaxial growth of Ti3SiC2 films along basal planes of SiC. Specifically for the (11math0) 4H-SiC, Ti3SiC2 basal planes are found to be orthogonal to the surface. The continuous or textured nature of Ti3SiC2 films does not depend of the SiC stacking sequence and is explained by a step-flow mechanism of growth mode. The ohmic character of the contact was confirmed by current-voltage measurements.
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81.15.Cd Deposition by sputtering
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.40.Gh Other heat and thermomechanical treatments
68.55.jm Texture
73.40.Ns Metal-nonmetal contacts
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