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16 Jul 2012

Volume 101, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 101, 033301 (2012); http://dx.doi.org/10.1063/1.4734240 (5 pages)

Ting-Gang Chen, Bo-Yu Huang, En-Chen Chen, Peichen Yu, and Hsin-Fei Meng
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Tungsten silicide films for microwave kinetic inductance detectors

Thomas Cecil, Antonino Miceli, Orlando Quaranta, Chian Liu, Daniel Rosenmann, Sean McHugh, and Benjamin Mazin

Appl. Phys. Lett. 101, 032601 (2012); http://dx.doi.org/10.1063/1.4737408 (4 pages) | Cited 1 time

Online Publication Date: 18 July 2012

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Microwave kinetic inductance detectors provide highly multiplexed arrays of detectors that can be configured to operate from the sub-millimeter to the x-ray regime. We have examined two tungsten silicide alloys (W5Si3 and WSi2), which are dense alloys that provide a critical temperature tunable with composition, large kinetic inductance fraction, and high normal-state resistivity. We have fabricated superconducting resonators and provide measurement data on critical temperature, surface resistance, quality factor, noise, and quasiparticles lifetime. Tungsten silicide appears to be promising for microwave kinetic inductance detectors.
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73.61.At Metal and metallic alloys
85.25.Am Superconducting device characterization, design, and modeling
73.25.+i Surface conductivity and carrier phenomena
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