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Applied Physics Letters / Volume 101 / Issue 4 / STRUCTURAL, MECHANICAL, OPTICAL, AND THERMODYNAMIC PROPERTIES OF ADVANCED MATERIALS

Appl. Phys. Lett. 101, 041904 (2012); http://dx.doi.org/10.1063/1.4738772 (4 pages)

Displacive radiation-induced structural contraction in nanocrystalline ZrN

Fengyuan Lu1, Mengbing Huang2, Faisal Yaqoob2, Maik Lang3, Fereydoon Namavar4, Christina Trautmann5,6, Hongtao Sun1, Rodney C. Ewing3, and Jie Lian1

1Department of Mechanical, Aerospace & Nuclear Engineering, Rensselaer Polytech Institute, Troy, New York 12180, USA
2Ion Beam Laboratory, University at Albany-SUNY, Albany, New York 12222, USA
3Departments of Earth & Environmental Sciences and Materials Sciences & Engineering, University of Michigan, Ann Arbor, Michigan 48109-1005, USA
4Department of Orthopaedic Surgery & Rehabilitation, University of Nebraska Medical Center, Omaha, Nebraska 68198, USA
5GSI Helmholtz Center for Heavy Ion Research, 64291 Darmstadt, Germany
6Technische Universität Darmstadt, 64289 Darmstadt, Germany

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(Received 28 May 2012; accepted 9 July 2012; published online 24 July 2012)

Nanocrystalline ZrN thin films with 5 nm grain size, prepared by ion beam assisted deposition, maintained their isometric structure upon intensive displacive and ionizing irradiations, indicating an extremely high stability similar to bulk ZrN. However, a unique structural contraction up to 1.42% in lattice parameter occurred only in nano-sized ZrN upon displacive irradiations. A significant nitrogen loss occurred with reduced N:Zr atomic ratio to 0.88, probably due to the production of displaced nitrogen atoms and fast diffusion along grain boundaries in nanocrystalline ZrN matrix. The accumulation of nitrogen vacancies and related strain relaxation may be responsible for the structural contraction.

© 2012 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

grain size, ion beam assisted deposition, lattice constants, nanostructured materials, vacancies (crystal), zirconium compounds

PACS

  • 81.15.Jj

    Ion and electron beam-assisted deposition; ion plating

  • 61.72.jd

    Vacancies

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

International Patent Classification (IPC)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.4738772

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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