APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

23 Jul 2012

Volume 101, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 043101 (2012); http://dx.doi.org/10.1063/1.4737152 (4 pages)

Toshiaki Tanigaki, Yoshikatsu Inada, Shinji Aizawa, Takahiro Suzuki, Hyun Soon Park, Tsuyoshi Matsuda, Akira Taniyama, Daisuke Shindo, and Akira Tonomura
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping

Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki

Appl. Phys. Lett. 101, 043501 (2012); http://dx.doi.org/10.1063/1.4737876 (4 pages)

Online Publication Date: 24 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using capacitance-frequency-temperature (C-f-T) mapping. Applying sputtering-deposited AlN, we attained AlN/AlGaN/GaN MIS heterostructure field-effect transistors with much suppressed gate leakage currents, but exhibiting frequency dispersion in C-V characteristics owing to high-density AlN/AlGaN interface states. In order to investigate the interface states deteriorating the device performance, we measured temperature-dependent frequency dispersion in the C-V characteristics. As a result, we obtained C-f-T mapping, whose analysis gives the activation energies of electron trapping, namely the interface state energy levels, for a wide range of the gate biases. This analysis method is auxiliary to the conventional conductance method, serving as a valuable tool for characterization of wide-bandgap devices with deep interface states. From the analysis, we can directly evaluate the gate-control efficiency of the devices.
Show PACS
81.05.Ea III-V semiconductors
81.15.Cd Deposition by sputtering
85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Controllable formation of resistive switching filaments by low-energy H+ irradiation in transition-metal oxides

Yu Zhang, Song-Lin Li, Jie Li, Hui Deng, Li-Min Cui, and Dong-Ning Zheng

Appl. Phys. Lett. 101, 043502 (2012); http://dx.doi.org/10.1063/1.4738894 (4 pages)

Online Publication Date: 25 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A concept is demonstrated to controllably form unipolar resistive filaments in pristine insulating oxides by a low-energy H+ irradiation via the ion bombarding effect and reactions in the oxides. In contrast to the conventional electroforming process in an uncontrollable way, our method well controls the density and distribution range of the switching filaments and largely reduces the probability of random occurrence of conducting channels. The memory devices prepared with our method are free of initial electroforming process and exhibit good switching performances. The ion irradiation proved an effective method to improve the performance of resistance random access memories.
Show PACS
84.30.Sk Pulse and digital circuits

Broadband directional acoustic waveguide with high efficiency

Bo Yuan, Bin Liang, Jian-cheng Tao, Xin-ye Zou, and Jian-chun Cheng

Appl. Phys. Lett. 101, 043503 (2012); http://dx.doi.org/10.1063/1.4739081 (4 pages) | Cited 1 time

Online Publication Date: 25 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have realized both theoretically and experimentally a directional acoustic transmission in a bended waveguide. For acoustic plane waves that incident from the two openings of the waveguide, an efficient partial band gap of dispersion relations is yielded by employing a linear two-dimensional phononic crystal properly designed according to the structural parameters of waveguide. As a result, a highly efficient directional transmission of acoustic waves can be achieved within a broad frequency range. The numerical predictions agree well with the experimental results. This should be potentially significant in various areas such as medical ultrasound and duct acoustics.
Show PACS
43.20.Mv Waveguides, wave propagation in tubes and ducts

Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon, Young Tack Lee, Ryong Ha, Heon-Jin Choi, Kwan Hyuck Yoon, Myung M. Sung, and Seongil Im

Appl. Phys. Lett. 101, 043504 (2012); http://dx.doi.org/10.1063/1.4739520 (4 pages)

Online Publication Date: 25 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼106, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼103.
Show PACS
81.05.Dz II-VI semiconductors
85.30.Kk Junction diodes
85.30.Tv Field effect devices
81.07.Gf Nanowires
72.60.+g Mixed conductivity and conductivity transitions
73.63.-b Electronic transport in nanoscale materials and structures

Magnetically controlled photonic crystal binary digits generator

Bin Jiang, Yejin Zhang, Yufei Wang, and Wanhua Zheng

Appl. Phys. Lett. 101, 043505 (2012); http://dx.doi.org/10.1063/1.4734398 (4 pages)

Online Publication Date: 26 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, we explore in detail the physical mechanism of the one-way propagating characteristic of a two-dimensional magneto-optical photonic crystal (MOPhC) waveguide, and then design the high-efficiency and wide bandwidth straight waveguide, 90° bent waveguide and splitter. Furthermore, we integrate the above basic component devices together, and design a 4 × 4 magnetically controlled MOPhC binary digits generator. To the best of our knowledge, it is the first time that such kind of device is proposed. This kind of binary digits generator can find wide applications in the future communication.
Show PACS
42.79.Gn Optical waveguides and couplers
85.70.Sq Magnetooptical devices
42.70.Qs Photonic bandgap materials

Dynamic state switching in nonlinear multiferroic cantilevers

Tiberiu-Dan Onuta, Yi Wang, Christian J. Long, Samuel E. Lofland, and Ichiro Takeuchi

Appl. Phys. Lett. 101, 043506 (2012); http://dx.doi.org/10.1063/1.4738991 (4 pages)

Online Publication Date: 26 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured cantilevers when a high voltage is applied on the Pb(Zr0.52Ti0.48)O3 piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response. The reference frequency at which the strain-mediated Fe0.7Ga0.3 based multiferroic device switches can also be tuned by applying a DC magnetic field bias that contributes to increase of the cantilever effective stiffness. The switching dynamics is mapped in the phase space of the device measured transfer function characteristic for such high piezo-film voltage excitation, providing additional information on the dynamical stability of the devices.
Show PACS
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.85.+t Magnetoelectric effects, multiferroics
77.55.Nv Multiferroic/magnetoelectric films
77.80.Fm Switching phenomena
84.30.Sk Pulse and digital circuits
85.50.Gk Non-volatile ferroelectric memories

Resistive switching by migration of hydrogen ions

Akihiro Hanada, Kentaro Kinoshita, and Satoru Kishida

Appl. Phys. Lett. 101, 043507 (2012); http://dx.doi.org/10.1063/1.4737897 (4 pages)

Online Publication Date: 26 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We clarified that the resistive switching phenomenon in transition metal oxides occurs via a redox reaction and that, in a broad sense, the phenomenon is not restricted to oxygen migration. In this study, hydrogen ions were efficiently introduced into single-crystal Bi2Sr2CaCu2O8+δ (Bi-2212) with the assistance of Pt catalyst. Resistive switching was demonstrated to occur such that the relation between the polarity of the applied voltage and the resultant resistance change was opposite to that observed in Bi-2212 with no hydrogen introduction. The characteristics of the resistive switching caused by the migration of hydrogen ions were evaluated and, as a result, high suitability to multi-bit applications as well as low energy consumption and operation faster than that of oxygen ions were confirmed.
Show PACS
84.30.Sk Pulse and digital circuits
85.25.-j Superconducting devices

Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

B. Mattias Borg, Martin Ek, Bahram Ganjipour, Anil W. Dey, Kimberly A. Dick, Lars-Erik Wernersson, and Claes Thelander

Appl. Phys. Lett. 101, 043508 (2012); http://dx.doi.org/10.1063/1.4739082 (4 pages) | Cited 2 times

Online Publication Date: 27 July 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm2 at VDS = 0.16 V and a record-high current density of 3.6 MA/cm2 at VDS = −0.5 V.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close