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23 Jul 2012

Volume 101, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 101, 043101 (2012); http://dx.doi.org/10.1063/1.4737152 (4 pages)

Toshiaki Tanigaki, Yoshikatsu Inada, Shinji Aizawa, Takahiro Suzuki, Hyun Soon Park, Tsuyoshi Matsuda, Akira Taniyama, Daisuke Shindo, and Akira Tonomura
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Nanometer-scale tunnel formation in metallic glass by helium ion irradiation

Lin Shao, Brian P. Gorman, Assel Aitkaliyeva, N. David Theodore, and Guoqiang Xie

Appl. Phys. Lett. 101, 041901 (2012); http://dx.doi.org/10.1063/1.4734399 (4 pages)

Online Publication Date: 23 July 2012

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We have shown that upon high fluence helium ion irradiation, metallic glass Cu50Zr45Ti5 becomes highly porous at the depth of the helium projected range. The resulting porous region is characterized by the formation of a tunnel like structure and self-linkage of nanometer size gas bubbles. Furthermore, the irradiation leads to the formation of nanometer size CuxZry crystals that are randomly distributed. The results of this study indicate that the He-filled bubbles have attractive interactions and experience considerable mobility. Movement of the bubbles is believed to be assisted by ballistic collisions.
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61.82.Bg Metals and alloys
61.43.Fs Glasses

Ultrafast photoinduced mechanical strain in epitaxial BiFeO3 thin films

L. Y. Chen, J. C. Yang, C. W. Luo, C. W. Laing, K. H. Wu, J.-Y. Lin, T. M. Uen, J. Y. Juang, Y. H. Chu, and T. Kobayashi

Appl. Phys. Lett. 101, 041902 (2012); http://dx.doi.org/10.1063/1.4734512 (4 pages) | Cited 1 time

Online Publication Date: 23 July 2012

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We studied ultrafast dynamics and photoinduced mechanical strain of BiFeO3 thin films by dual-color transient reflectivity measurements (ΔR/R). Anisotropic photostriction in BiFeO3 is found to be mainly driven by the optical rectification effect. Results of the photostriction at various thicknesses show that the estimated sound velocity along [110] direction of BiFeO3 is 4.76 km/s.
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68.60.Bs Mechanical and acoustical properties
78.20.Pa Photoacoustic effects
78.47.jg Time resolved reflection spectroscopy
62.65.+k Acoustical properties of solids

Prediction of the propagation probability of individual cracks in brittle single crystal materials

B. K. Tanner, M. C. Fossati, J. Garagorri, M. R. Elizalde, D. Allen, P. J. McNally, D. Jacques, J. Wittge, and A. N. Danilewsky

Appl. Phys. Lett. 101, 041903 (2012); http://dx.doi.org/10.1063/1.4738994 (4 pages)

Online Publication Date: 23 July 2012

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We show that x-ray diffraction imaging (topography) and finite-element modelling can determine accurately the probability of propagation of individual cracks in brittle single crystal materials. The x-ray image of the crack provides a critical parameter for crack propagation which informs a predictive model, enabling us to identify critical defects that lead to catastrophic shattering of silicon wafers during high temperature thermal processing. Wafers fracture on cooling and finite element modelling shows that, during cooling, the tangential stress at the wafer edge is tensile and results in crack propagation. The predicted fracture geometry agrees extremely well with that observed experimentally.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mm Fracture
62.20.mt Cracks
68.35.bg Semiconductors
68.35.Gy Mechanical properties; surface strains
81.40.Lm Deformation, plasticity, and creep

Displacive radiation-induced structural contraction in nanocrystalline ZrN

Fengyuan Lu, Mengbing Huang, Faisal Yaqoob, Maik Lang, Fereydoon Namavar, Christina Trautmann, Hongtao Sun, Rodney C. Ewing, and Jie Lian

Appl. Phys. Lett. 101, 041904 (2012); http://dx.doi.org/10.1063/1.4738772 (4 pages)

Online Publication Date: 24 July 2012

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Nanocrystalline ZrN thin films with 5 nm grain size, prepared by ion beam assisted deposition, maintained their isometric structure upon intensive displacive and ionizing irradiations, indicating an extremely high stability similar to bulk ZrN. However, a unique structural contraction up to 1.42% in lattice parameter occurred only in nano-sized ZrN upon displacive irradiations. A significant nitrogen loss occurred with reduced N:Zr atomic ratio to 0.88, probably due to the production of displaced nitrogen atoms and fast diffusion along grain boundaries in nanocrystalline ZrN matrix. The accumulation of nitrogen vacancies and related strain relaxation may be responsible for the structural contraction.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
61.72.jd Vacancies
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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Thermo-optic coefficient of silicon at 1550 nm and cryogenic temperatures

J. Komma, C. Schwarz, G. Hofmann, D. Heinert, and R. Nawrodt

Appl. Phys. Lett. 101, 041905 (2012); http://dx.doi.org/10.1063/1.4738989 (4 pages) | Cited 5 times

Online Publication Date: 24 July 2012

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The thermo-optic coefficient dn/dT of silicon was measured at 1550 nm in the wide temperature range from 5 K to 300 K. For this purpose an interferometric measurement scheme was applied using the silicon sample as a Fabry-Perot etalon. The high resolution of this setup revealed a thermo-optic coefficient as low as 10−8 K−1 at 5 K. The presented results show an excellent agreement with former measurements above 30 K including a value of dn/dT = 1.8×10−4 K−1 at 300 K.
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78.20.N- Thermo-optic effects

Influence of aluminum speciation on the stability of aluminosilicate glasses against crystallization

Qiuju Zheng, Morten M. Smedskjaer, Randall E. Youngman, Marcel Potuzak, John C. Mauro, and Yuanzheng Yue

Appl. Phys. Lett. 101, 041906 (2012); http://dx.doi.org/10.1063/1.4739005 (4 pages) | Cited 4 times

Online Publication Date: 24 July 2012

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In this letter, we investigate the correlation between glass microstructure and glass stability (GS) in soda lime aluminosilicates. We find a loss of GS (i.e., an onset of crystallization) in the glasses above a critical concentration of Al2O3 when heating at the standard rate of 20 K/min. This loss in GS may be attributed to formation of five-fold coordinated Al species when [Al2O3]/[Na2O] > 1. The primary crystalline phase is identified as nepheline, in which Al exists in four-fold coordination. This implies that the five-fold coordinated Al is energetically less stable compared to Al in a tetrahedral environment.
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61.43.Fs Glasses
81.40.Gh Other heat and thermomechanical treatments

Direct visualization of boron dopant distribution and coordination in individual chemical vapor deposition nanocrystalline B-doped diamond grains

Ying-Gang Lu, Stuart Turner, Johan Verbeeck, Stoffel D. Janssens, Patrick Wagner, Ken Haenen, and Gustaaf Van Tendeloo

Appl. Phys. Lett. 101, 041907 (2012); http://dx.doi.org/10.1063/1.4738885 (4 pages) | Cited 1 time

Online Publication Date: 25 July 2012

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The boron dopant distribution in individual heavily boron-doped nanocrystalline diamond film grains, with sizes ranging from 100 to 350 nm in diameter, has been studied using a combination of high resolution annular dark field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy. Using these tools, the boron distribution and local boron coordination have been determined. Quantification results reveal embedding of B dopants in the diamond lattice, and a preferential enrichment of boron at defective areas and twin boundaries. Coordination mapping reveals a distinct difference in coordination of the B dopants in “pristine” diamond areas and in defective regions.
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61.72.sh Impurity distribution
68.55.ap Fullerenes
61.72.Mm Grain and twin boundaries
79.20.Uv Electron energy loss spectroscopy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Enhancement of emission characteristics of cadmium-free ZCIS/ZnS/SiO2 quantum dots by Au nanoparticles

Chung-Tse Chen, Chi-Wei Lai, Yi-Rou Liou, Hsing-Ju Pan, Pi-Tai Chou, and Yang-Fang Chen

Appl. Phys. Lett. 101, 041908 (2012); http://dx.doi.org/10.1063/1.4739246 (5 pages)

Online Publication Date: 26 July 2012

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The resonant coupling between cadmium-free I-III-VI2 group quantum dots (QDs) and metal nanostructures has been investigated. Via a SiO2-packaging synthetic procedure, the emission intensity of green ZCIS/ZnS QDs can be greatly enhanced by three times through the localized surface plasmon of Au nanoparticles. Moreover, the bandwidth of the emission spectrum can be narrowed by 17 nm, and the resultant quantum yield is more than 50% which sets up the highest reported value up today for green I-III-VI2 QDs. Our strategy for the improved characteristics of emission spectrum may open a facile alternative for the development of cadmium-free QD light emitting diodes and other optoelectronic devices.
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81.07.Ta Quantum dots
85.60.Jb Light-emitting devices
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
73.22.Lp Collective excitations
78.67.Hc Quantum dots
78.68.+m Optical properties of surfaces

Phonon plasmon interaction in ternary group-III-nitrides

Ronny Kirste, Stefan Mohn, Markus R. Wagner, Juan S. Reparaz, and Axel Hoffmann

Appl. Phys. Lett. 101, 041909 (2012); http://dx.doi.org/10.1063/1.4739415 (4 pages) | Cited 2 times

Online Publication Date: 26 July 2012

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Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated experimentally and theoretically. Based on the observation of broadening and shifting of the A1(LO) mode in AlGaN upon Si-doping, a lineshape analysis was performed to determine the carrier concentration. The results obtained by this method are in excellent agreement to those from Hall measurements, confirming the validity of the employed model. Finally, neglecting phonon and plasmon damping, the Raman shift of the A1(LO) mode in dependence of the carrier concentration for AlGaN and InGaN is calculated. This enables a fast and contactless determination of carrier concentrations in the future.
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71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
72.20.My Galvanomagnetic and other magnetotransport effects
78.30.Fs III-V and II-VI semiconductors
81.05.Hd Other semiconductors

Topological correlations of three-dimensional grains

Hao Wang, Guoquan Liu, Asad Ullah, and Junhua Luan

Appl. Phys. Lett. 101, 041910 (2012); http://dx.doi.org/10.1063/1.4739443 (4 pages) | Cited 1 time

Online Publication Date: 26 July 2012

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Topological correlations of three-dimensional grains were investigated by Monte Carlo-Potts model simulation. The result shows that, unlike first nearest neighbors (the Aboav-Weaire law [D. Aboav, Metallography 3, 383 (1970) and D. Weaire, Metallography 7, 157 (1974)] holds), there appears to be very little correlation between grains and their second and third nearest neighbors (on average), i.e., the average number of faces of second nearest neighbors, m2, and third nearest neighbors, m3, are independent of faces f of the center grain (nearly m2 = 14.984 and m3 = 14.489). This result indicates that long range correlations beyond first nearest neighbors may have negligible effect on the growth of center grains and thus provides support to a topologically averaged growth law that only considered the non-random first nearest-neighbor interactions.
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61.72.-y Defects and impurities in crystals; microstructure

Pure nonlinear optical activity in metamaterials

Ilya V. Shadrivov

Appl. Phys. Lett. 101, 041911 (2012); http://dx.doi.org/10.1063/1.4739849 (4 pages) | Cited 2 times

Online Publication Date: 27 July 2012

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We demonstrate a type of meta-atom for creating metamaterials with giant nonlinear optical activity but vanishing linear optical activity in a wide frequency range. Such properties are not found in any natural materials, and we call this regime as pure nonlinear optical activity. We further extend our design concept and show that the metamaterial can be tuned dynamically to exhibit either positive or negative polarization rotation.
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81.05.Xj Metamaterials for chiral, bianisotropic and other complex media
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells

J. Mickevičius, J. Jurkevičius, K. Kazlauskas, A. Žukauskas, G. Tamulaitis, M. S. Shur, M. Shatalov, J. Yang, and R. Gaska

Appl. Phys. Lett. 101, 041912 (2012); http://dx.doi.org/10.1063/1.4738791 (4 pages) | Cited 1 time

Online Publication Date: 27 July 2012

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The effect of carrier localization on stimulated emission (SE) in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells (QWs) on sapphire substrate was studied under photoexcitation in the edge emission configuration in the temperature range from 8 K to 300 K. The band potential profile responsible for carrier localization was modulated by the variation of QW width and monitored using fitting the experimental temperature dependence of the spontaneous luminescence band width to that obtained by the Monte Carlo simulation of exciton hopping. A faster increase of SE threshold with increasing temperature was observed in narrow QWs and was attributed to deeper carrier localization due to the modulation of quantum confinement energy by well width fluctuations. Meanwhile, delocalized carriers were shown to contribute to the filling of states at the mobility edge, where SE occurs. These results imply that the deep ultraviolet AlGaN/AlGaN laser structures can be optimized in terms of carrier localization effect through the selection of appropriate QW width.
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78.45.+h Stimulated emission
78.55.Cr III-V semiconductors
78.67.De Quantum wells
71.35.-y Excitons and related phenomena
72.20.Ee Mobility edges; hopping transport
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Origins of high visible light transparency and solar heat-shielding performance in LaB6

Lihua Xiao, Yuchang Su, Xiaozhong Zhou, Hongyan Chen, Jiang Tan, Te Hu, Jian Yan, and Ping Peng

Appl. Phys. Lett. 101, 041913 (2012); http://dx.doi.org/10.1063/1.4733386 (3 pages)

Online Publication Date: 27 July 2012

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We investigated the optical properties of LaB6 using first-principles calculations within the framework of density functional theory. It was found that our calculated results are in excellent agreement with the previously reported available and experimental findings. Analysis of the dielectric functions showed that LaB6 has the unique optical behavior in the visible and near infrared range and revealed that origins of solar heat-shielding performance and high visible transparency for LaB6 should be ascribed to its plasmonic behaviors.
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78.20.-e Optical properties of bulk materials and thin films
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
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