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30 Jul 2012

Volume 101, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 101, 051103 (2012); http://dx.doi.org/10.1063/1.4738774 (4 pages)

Alec Rose, Da Huang, and David R. Smith
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An exactly solvable model for the graphene transistor in the quantum capacitance limit

Kristen N. Parrish and Deji Akinwande

Appl. Phys. Lett. 101, 053501 (2012); http://dx.doi.org/10.1063/1.4739943 (4 pages)

Online Publication Date: 31 July 2012

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We explore the ultimate behavior of the graphene transistor in the quantum capacitance limit. The quantum capacitance formulation allows for an exactly solvable model, and the ideal assumptions provide an upper bound on performance, including peak currents of 1 mA/μm with mobilities as low as 2000 cm2/V s for channel length of 1 μm, as well as linearly increasing transconductance not observed in conventional transistors. A negative differential resistance is predicted under certain conditions, with a maximum peak-to-valley-current ratio of 4. Finally, the effects of oxide scaling are elucidated and the oxide capacitances required for quantum capacitance limited behavior are quantified.
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85.30.Tv Field effect devices

Effect of the electrode materials on the resistive switching of Ti4O7

Dong-Su Ko, Seong-Il Kim, Tae-Young Ahn, Sung-Dae Kim, Young-Hwa Oh, and Young-Woon Kim

Appl. Phys. Lett. 101, 053502 (2012); http://dx.doi.org/10.1063/1.4739949 (4 pages)

Online Publication Date: 1 August 2012

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The Ti4O7 Magnéli phase was grown on a Pt substrate by reactive DC magnetron sputtering. Resistive switching of a Ti4O7 thin film was tested with the three different electrode materials of Ti, W, and Pt. The electrical characteristics revealed ohmic contact with a Ti or W top electrode on the Ti4O7/Pt, while the Pt/Ti4O7/Pt structure showed the characteristics of a diode in a pristine state and unipolar resistive switching behavior after a soft breakdown. The resistive switching behavior of Pt/Ti4O7/Pt was found to be related to the formation of an amorphous Ti-Pt-O layer which originated from the intermixing of Pt with Ti4O7.
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85.30.Tv Field effect devices
72.60.+g Mixed conductivity and conductivity transitions
73.40.Rw Metal-insulator-metal structures
73.61.Ng Insulators
81.15.Cd Deposition by sputtering
84.32.Dd Connectors, relays, and switches

Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes

Guo-Tong Du, Wang Zhao, Guo-Guang Wu, Zhi-Feng Shi, Xiao-Chuan Xia, Yang Liu, Hong-Wei Liang, Xin Dong, Yan Ma, and Bao-Lin Zhang

Appl. Phys. Lett. 101, 053503 (2012); http://dx.doi.org/10.1063/1.4740081 (4 pages) | Cited 2 times

Online Publication Date: 1 August 2012

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A phosphorus-doped p-ZnO layer was prepared on an n-GaN/Al2O3 substrate by metal-organic chemical vapor deposition, and a heterojunction device was fabricated. The p-type doping of the device was confirmed by Hall, electrochemical capacitance-voltage and low-temperature photoluminescence measurements. Under forward bias, a random ultraviolet (UV) lasing phenomenon was detected from the p-ZnO:P/n-GaN heterojunction light-emitting diode. The UV emission peak was centered at approximately 379 nm and was achieved from the ZnO side of the diode. The proposed diode provides a potentially valuable way to realize future high-efficiency ZnO lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.55.Cr III-V semiconductors
78.55.Et II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Positive gate bias stress instability of carbon nanotube thin film transistors

Sang Won Lee, Si Young Lee, Seong Chu Lim, Young-dong Kwon, Joo-Sun Yoon, Keehan Uh, and Young Hee Lee

Appl. Phys. Lett. 101, 053504 (2012); http://dx.doi.org/10.1063/1.4740084 (4 pages)

Online Publication Date: 1 August 2012

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The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO2 and HfO2 oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift (ΔVth) with time for a PGBS, following a stretched exponential model. Although the saturated ΔVth was larger on SiO2 than on HfO2, CNT device using SiO2 gate insulator recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against PGBS.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability

Andrea Padovani, Antonio Arreghini, Luca Vandelli, Luca Larcher, Geert Van den bosch, and Jan Van Houdt

Appl. Phys. Lett. 101, 053505 (2012); http://dx.doi.org/10.1063/1.4740255 (4 pages)

Online Publication Date: 1 August 2012

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We demonstrate the formation of a vertical charge dipole in the nitride layer of TaN/Al2O3/Si3N4/SiO2/Si memories and use dedicated experiments and device simulations to investigate its dependence on program and erase conditions. We show that the polarity of the dipole depends on the program/erase operation sequence and demonstrate that it is at the origin of the charge losses observed during retention. This dipole severely affects the retention of mildly programmed and erased states, representing a serious reliability concern especially for multi-level applications.
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84.32.Tt Capacitors

The effect of impact velocity on interfacial adhesion of contact-mode surface micromachines

H. Xiang and K. Komvopoulos

Appl. Phys. Lett. 101, 053506 (2012); http://dx.doi.org/10.1063/1.4740260 (4 pages)

Online Publication Date: 2 August 2012

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The effect of impact velocity on the adhesion characteristics of sidewall contact interfaces of dynamic micromachines was studied experimentally using surface micromachines specifically designed for dynamic contact (impact) testing. The evolution of interfacial adhesion with contact cycles was examined for a wide range of impact velocity (frequency). Micromachine lifetime comprised two phases—incubation and surface modification. Shorter lifetime was encountered at higher contact pressure and impact velocity. Permanent adhesion (stiction) due to the interfacial adhesion force exceeding the micromachine restoring force was found to correlate with the product of maximum contact pressure and impact velocity (pressure-velocity limit). Micromachine lifetime decreased nonlinearly with the reciprocal of the pressure-velocity limit. A method for predicting micromachine lifetime was derived based on observed experimental trend. A reversible variation of the adhesion force with impact velocity was observed in the incubation phase, which was explained in terms of the elastic deformation of contacting asperities. This trend also revealed the existence of two low- and high-impact-velocity regimes where the number of asperity contacts and average asperity size were the dominant factors, respectively. The effect of impact velocity on interfacial adhesion is interpreted in the context of physical and chemical surface modification of the sidewall surfaces of polycrystalline surface micromachines.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Mechanical tensile strain induced gate and substrate currents change in n and p-channel metal-oxide-semiconductor field-effect transistors

Wangran Wu, Yu Pu, Jiabao Sun, Yi Zhao, Xiangming Xu, and Yi Shi

Appl. Phys. Lett. 101, 053507 (2012); http://dx.doi.org/10.1063/1.4740278 (3 pages) | Cited 1 time

Online Publication Date: 2 August 2012

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To investigate and understand the reliability behavior of strained silicon devices, the changes of gate currents (Ig) and substrate currents (Isub) in n and p-channel metal-oxide-semiconductor field-transistors (MOSFETs) under different types of mechanically applied tensile stresses have been studied. It has been observed that, under the uniaxial tensile stress, both Ig and Isub of pMOSFETs increase with the increase of applied stress under the inversion and the accumulation conditions. However, an opposite stress dependence in nMOSFETs has been observed for Ig and Isub in both the inversion and the accumulation regimes. Similar changes have been found for Ig and Isub of nMOSFETs under biaxial tensile stress. The observations are explained by the strain induced band structure modulation and the repopulation of carriers.
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85.30.Tv Field effect devices

Conformal Ni-silicide formation over three-dimensional device structures

Zhiwei Zhu (朱志炜), Xindong Gao (高歆栋), Tomas Kubart, Zhi-Bin Zhang (张志滨), Dongping Wu (吴东平), and Shi-Li Zhang (张世理)

Appl. Phys. Lett. 101, 053508 (2012); http://dx.doi.org/10.1063/1.4742139 (4 pages)

Online Publication Date: 2 August 2012

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This letter reports on conformal formation of ultrathin Ni-silicide films over a three-dimension structure relevant to the most advanced tri-gate transistor architecture. This is achieved by combining ionization of the sputtered Ni atoms with application of an appropriate bias to the Si substrate during the sputter-deposition of Ni films. In comparison, use of ordinary DC sputtering for Ni deposition results in thinner or less uniform silicide films on the vertical sidewalls than on the top surface of the three-dimensional structure. The roughened Si sidewall surface is ascribed to be responsible for a deteriorated thermal stability of the resultant silicide films.
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81.15.Cd Deposition by sputtering
85.40.Sz Deposition technology
68.35.bg Semiconductors
68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects

Radial characteristics of heavy-ion track structure and implications of delta-ray events for microelectronics

M. P. King, R. A. Reed, R. A. Weller, M. H. Mendenhall, R. D. Schrimpf, N. D. Pate, E. A. Auden, and S. L. Weeden-Wright

Appl. Phys. Lett. 101, 053509 (2012); http://dx.doi.org/10.1063/1.4742163 (3 pages)

Online Publication Date: 2 August 2012

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Monte-Carlo radiation transport simulations are used to evaluate the implications of track structure on the response of microelectronics to energy deposition from ionizing radiation events. Results show that average track structure models cannot fully account for effects on microelectronics devices from energy deposition by δ-rays. Additionally, results indicate that δ-ray energy deposition events are capable of depositing up to 10 keV of energy within a 50 nm cube at radial distances greater than 10 μm from an ionizing particle event.
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85.40.Bh Computer-aided design of microcircuits; layout and modeling
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