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30 Jul 2012

Volume 101, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 101, 051103 (2012); http://dx.doi.org/10.1063/1.4738774 (4 pages)

Alec Rose, Da Huang, and David R. Smith
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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications

Yang-Shun Fan, Po-Tsun Liu, Li-Feng Teng, and Ching-Hui Hsu

Appl. Phys. Lett. 101, 052901 (2012); http://dx.doi.org/10.1063/1.4742737 (3 pages) | Cited 1 time

Online Publication Date: 31 July 2012

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Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 104 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state.
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72.60.+g Mixed conductivity and conductivity transitions
73.61.Ga II-VI semiconductors
81.15.Cd Deposition by sputtering
84.30.Sk Pulse and digital circuits

Chemical homogeneity effects on the nonlinear dielectric response of lead zirconate titanate thin films

Jon F. Ihlefeld and Christopher T. Shelton

Appl. Phys. Lett. 101, 052902 (2012); http://dx.doi.org/10.1063/1.4742171 (4 pages) | Cited 1 time

Online Publication Date: 1 August 2012

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Rayleigh analysis has been used to investigate dielectric nonlinearity in polycrystalline lead zirconate titanate thin films that possess a chemically homogeneous B-site and those with titanium/zirconium gradients through the film thickness. Chemically homogeneous films possess greater irreversible and reversible contributions and greater ratios of irreversible to reversible contributions to dielectric nonlinearity than chemically heterogeneous films. These measurements demonstrate that the ferroelectric performance improvements observed in chemically homogeneous Pb(Zr,Ti)O3 thin films, with compositions near the morphotropic phase boundary, are associated with enhanced extrinsic contributions owing to improved domain wall mobility.
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77.80.Dj Domain structure; hysteresis
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Identifying a suitable passivation route for Ge interfaces

H. Li, L. Lin, and J. Robertson

Appl. Phys. Lett. 101, 052903 (2012); http://dx.doi.org/10.1063/1.4742166 (4 pages) | Cited 5 times

Online Publication Date: 3 August 2012

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We compare the usefulness of HfO2, LaGeOx, HfGeOy, GeNx, and Al2O3 as passivating gate dielectrics for Ge substrates. We argue that a key role is to block O vacancy diffusion through the GeO2, inhibiting defect creation at the Ge-oxide interface. Al2O3 is shown to be preferred for this role, being a diffusion barrier and having large band offsets. HfGeOx can phase-separate, leaving HfO2 through which O vacancies and Ge could diffuse. LaGeOx can cause flat-band shifts of undesired polarity, whereas GeNx has a rather small valence band offset and band tail states.
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81.65.Rv Passivation
61.72.jd Vacancies
64.75.Qr Phase separation and segregation in semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
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