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30 Jul 2012

Volume 101, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 101, 051103 (2012); http://dx.doi.org/10.1063/1.4738774 (4 pages)

Alec Rose, Da Huang, and David R. Smith
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Effect of a calcium cathode on water-based nanoparticulate solar cells

Ben Vaughan, Andrew Stapleton, Bofei Xue, Elisa Sesa, Xiaojing Zhou, Glenn Bryant, Warwick Belcher, and Paul Dastoor

Appl. Phys. Lett. 101, 053901 (2012); http://dx.doi.org/10.1063/1.4737640 (4 pages) | Cited 2 times

Online Publication Date: 30 July 2012

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Water-based nanoparticulate (NP) and bulk heterojunction (BHJ) organic photovoltaic (OPV) devices based on blends of poly(9,9-dioctylfluorene-co-N,N-bis(4-butylphenyl)-N,Ndiphenyl-1,4-phenylenediamine) (PFB) and poly(9,9-dioctylfluorene-co-benzothiadiazole (F8BT) have been fabricated with aluminium and calcium/aluminium cathodes. The NP devices exhibit power conversion efficiencies (PCEs) that are double that of the corresponding BHJ device. Moreover, the addition of calcium into the cathode structure results in a dramatic increase in open circuit voltage and PCEs approaching 1% for water-based polyfluorene OPV devices.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells

SiC photoelectrodes for a self-driven water-splitting cell

Tomonari Yasuda, Masashi Kato, Masaya Ichimura, and Tomoaki Hatayama

Appl. Phys. Lett. 101, 053902 (2012); http://dx.doi.org/10.1063/1.4740079 (3 pages) | Cited 1 time

Online Publication Date: 31 July 2012

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Photoelectrochemical properties of 4H-, 6H-, and 3C-SiC were characterized for a self-driven water-splitting cell. Correspondingly, the band edge potentials of SiC polytypes were estimated from the results of capacitance-voltage measurement in different electrolytes. The estimated potentials indicate that these polytypes were able to split water. The photocurrents of the epitaxially grown samples were found to be larger than the bulk samples. The solar-to-hydrogen conversion efficiency of p-type SiC was estimated for the first time for a self-driven two-electrode system.
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82.45.Gj Electrolytes
72.40.+w Photoconduction and photovoltaic effects

Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier

Byungha Shin, Yu Zhu, Nestor A. Bojarczuk, S. Jay Chey, and Supratik Guha

Appl. Phys. Lett. 101, 053903 (2012); http://dx.doi.org/10.1063/1.4740276 (4 pages) | Cited 9 times

Online Publication Date: 31 July 2012

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We have examined Cu2ZnSnSe4 (CZTSe) solar cells prepared by thermal co-evaporation on Mo-coated glass substrates followed by post-deposition annealing under Se ambient. We show that the control of an interfacial MoSe2 layer thickness and the introduction of an adequate Se partial pressure (PSe) during annealing are essential to achieve high efficiency CZTSe solar cells—a reverse correlation between device performance and MoSe2 thickness is observed, and insufficient PSe leads to the formation of defects within the bandgap as revealed by photoluminescence measurements. Using a TiN diffusion barrier, we demonstrate 8.9% efficiency CZTSe devices with a long lifetime of photo-generated carriers.
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88.40.J- Types of solar cells
88.40.hj Efficiency and performance of solar cells

Enhancement in the figure of merit of p-type Bi100−xSbx alloys through multiple valence-band doping

Hyungyu Jin, Christopher M. Jaworski, and Joseph P. Heremans

Appl. Phys. Lett. 101, 053904 (2012); http://dx.doi.org/10.1063/1.4740262 (4 pages) | Cited 1 time

Online Publication Date: 1 August 2012

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N-type Bi100−xSbx alloys have the highest thermoelectric figure of merit (zT) of all materials below 200 K; here, we investigate how filling multiple valence band pockets at the T and Η-points of the Brillouin zone produces high zT’s in p-type Sn-doped material. This approach, theoretically predicted to potentially give zT > 1 in Bi, was used in PbTe. We report thermopower, electrical and thermal conductivity (2 to 400 K) measurements of single crystals with 12 ≤ x ≤ 37 and polycrystals (x = 50-90), higher Sb concentrations than previous studies. We obtain a 60% improvement in zT to 0.13.
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72.20.Pa Thermoelectric and thermomagnetic effects
72.80.Jc Other crystalline inorganic semiconductors
66.70.Df Metals, alloys, and semiconductors
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