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30 Jul 2012

Volume 101, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 101, 051103 (2012); http://dx.doi.org/10.1063/1.4738774 (4 pages)

Alec Rose, Da Huang, and David R. Smith
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Strain rate sensitivity and activation volume of Cu/Ni metallic multilayer thin films measured via micropillar compression

J. S. Carpenter, A. Misra, M. D. Uchic, and P. M. Anderson

Appl. Phys. Lett. 101, 051901 (2012); http://dx.doi.org/10.1063/1.4739521 (4 pages) | Cited 2 times

Online Publication Date: 30 July 2012

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Micropillar compression testing with repeated jumps in strain rate is used to circumvent inherent difficulties associated with nanoindentation and tensile testing of free-standing films. Application to sputtered 21 nm/21 nm Cu/Ni multilayer thin films with a cube-on-cube texture reveals an average strain rate sensitivity (m = 0.014) and activation volume (V = 17 b3), comparable to nanocrystalline face-centered cubic metals. Yet, m increases by ∼50% and V decreases by 70% with increasing strain, opposite to trends reported for nanotwinned Cu. The large, strain-dependent shifts in m and V are dependent on the underlying misfit dislocation structure of Cu/Ni interfaces.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Diamond/aluminium nitride composites for efficient thermal management applications

J. Cervenka, N. Dontschuk, F. Ladouceur, S. G. Duvall, and S. Prawer

Appl. Phys. Lett. 101, 051902 (2012); http://dx.doi.org/10.1063/1.4742736 (4 pages) | Cited 1 time

Online Publication Date: 31 July 2012

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Synthetic diamond/AlN composite materials have been fabricated by a combination of microwave plasma-assisted chemical vapor deposition and molecular beam epitaxy. These wide band gap semiconductor heterojunctions show promises for many applications, including thermal management, deep ultraviolet light emitting devices, and high power and high temperature electronics. Here, we report results of an interface study of polycrystalline diamond layers grown on single crystal AlN(0001). High resolution transmission microscopy revealed atomically sharp interfaces between diamond and AlN. Temperature dependent Raman spectroscopy measurements showed reduced thermal resistance on diamond-coated AlN substrates compared to uncoated AlN at temperatures above 330 K.
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68.55.ag Semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.30.Hv Other nonmetallic inorganics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.60.Jb Light-emitting devices

Band gap tunability of molecular beam epitaxy grown lateral composition modulated GaInP structures by controlling V/III flux ratio

K. W. Park, C. Y. Park, and Y. T. Lee

Appl. Phys. Lett. 101, 051903 (2012); http://dx.doi.org/10.1063/1.4739835 (4 pages)

Online Publication Date: 31 July 2012

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Lateral composition modulated (LCM) GaInP structures were grown on (001) GaAs substrate by molecular beam epitaxy with different V/III flux ratios. Band gap of LCM structures could be tuned from 1.93 eV to 1.83 eV by decreasing flux ratio while maintaining the same photoluminescence intensity, enhanced light absorption, and widened absorption spectrum. It is shown that for band gap tuning of LCM structures, flux ratio adjustment is a more viable method compared to growth temperature adjustment.
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71.20.Nr Semiconductor compounds
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.ag Semiconductors

Three-dimensional graphoepitaxial alignment resulting from solid-state dewetting of Au films on surfaces with monoperiodic topography

Amanda L. Giermann and Carl V. Thompson

Appl. Phys. Lett. 101, 051904 (2012); http://dx.doi.org/10.1063/1.4740277 (3 pages)

Online Publication Date: 31 July 2012

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Polycrystalline gold films were deposited and annealed on oxidized silicon with flat surfaces and surfaces modified to have saw-tooth surface topography. Annealing led to solid-sate dewetting to form discrete islands. As-deposited films on flat surfaces had a strong (111) texture that became still stronger during dewetting. Films deposited on saw-tooth structures had a weak (100) texture with a weak [110] in-plane alignment along the grooves. This in-plane alignment became much more uniform during dewetting. It is proposed that graphoepitaxial alignment observed in both the as-deposited and annealed films on saw-tooth structures is the result of surface-energy-driven grain growth.
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81.15.Dj E-beam and hot filament evaporation deposition
68.08.Bc Wetting
81.15.Jj Ion and electron beam-assisted deposition; ion plating
81.40.Gh Other heat and thermomechanical treatments
68.35.bd Metals and alloys
68.55.aj Insulators

dc illusion and its experimental verification

Min Liu, Zhong Lei Mei, Xiang Ma, and Tie Jun Cui

Appl. Phys. Lett. 101, 051905 (2012); http://dx.doi.org/10.1063/1.4742133 (3 pages) | Cited 5 times

Online Publication Date: 1 August 2012

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Based on the transformation optics method, we propose a dc illusion device, which can transform a metallic object into a magnified dielectric object using anisotropic conducting materials. Utilizing the analogy between electric conductivities and resistor networks, we design and fabricate the device using metal film resistors. The practical measurement data agree very well with simulation results. The proposed dc illusion device is easy to process and measure, and thus has potential applications in various sectors.
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84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
41.20.-q Applied classical electromagnetism
42.15.Eq Optical system design

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

Guoxiang Wang, Qiuhua Nie, Xiang Shen, R. P. Wang, Liangcai Wu, Jing Fu, Tiefeng Xu, and Shixun Dai

Appl. Phys. Lett. 101, 051906 (2012); http://dx.doi.org/10.1063/1.4742144 (5 pages) | Cited 1 time

Online Publication Date: 1 August 2012

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Zn-doped Ge2Sb2Te5 phase-change materials have been investigated for phase change memory applications. Zn15.16(Ge2Sb2Te5)84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge2Sb2Te5. The proper Zn atom added into Ge2Sb2Te5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.
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81.05.Gc Amorphous semiconductors
81.05.Kf Glasses (including metallic glasses)
84.30.Sk Pulse and digital circuits
64.70.kg Semiconductors
64.70.kj Glasses
73.61.Jc Amorphous semiconductors; glasses

Acoustic filter based on Helmholtz resonator array

Jyun-Hong Lu, Chung-Chun Kuo, Fu-Li Hsiao, and Chii-Chang Chen

Appl. Phys. Lett. 101, 051907 (2012); http://dx.doi.org/10.1063/1.4742773 (4 pages)

Online Publication Date: 3 August 2012

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We investigate theoretically and experimentally the absorption of a Helmholtz resonator (HR) array, an aluminum device operated in water. The HR array’s period is 2 mm. The operating frequency range is ∼0.2–0.7 MHz. We observed two transmission dips in both experimental and theoretical spectra. These dips are dominated by different resonance orders in the HR. The resonance behaviors are investigated with steady-fields simulation and can be represented by spring-mass models. This allows us to reduce the device’s footprint significantly.
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43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
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