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6 Aug 2012

Volume 101, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 101, 062401 (2012); http://dx.doi.org/10.1063/1.4730997 (4 pages)

Mahdi Jamali, Kulothungasagaran Narayanapillai, Jae Hyun Kwon, and Hyunsoo Yang
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Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

Wei Hu, Xinman Chen, Guangheng Wu, Yanting Lin, Ni Qin, and Dinghua Bao

Appl. Phys. Lett. 101, 063501 (2012); http://dx.doi.org/10.1063/1.4744950 (4 pages) | Cited 1 time

Online Publication Date: 8 August 2012

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We report on the co-existence of bipolar and unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt structures of which the ZnFe2O4 layer was fabricated by a chemical solution deposition method. The memory devices show reproducible and stable bipolar resistive switching, tri-state unipolar resistive switching under only applied negative bias voltage, and unipolar resistive switching transited from bipolar resistive switching with different electroforming conditions. Excellent switching cycling in both unipolar resistive switching and bipolar resistive switching is demonstrated. Based on the conducting filament model, electrochemical metallization effect has been proposed to explain the bipolar resistive switching behavior, whereas the unipolar resistive switching behavior is attributed to electrochemical metallization effect and thermochemical effect.
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84.30.Sk Pulse and digital circuits
85.40.Ls Metallization, contacts, interconnects; device isolation
82.45.-h Electrochemistry and electrophoresis

Triplet-polaron quenching by charges on guest molecules in phosphorescent organic light emitting devices

Hossein Zamani Siboni and Hany Aziz

Appl. Phys. Lett. 101, 063502 (2012); http://dx.doi.org/10.1063/1.4745194 (4 pages) | Cited 2 times

Online Publication Date: 8 August 2012

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We use delayed electroluminescence and photoluminescence measurements to study triplet-polaron-quenching (TPQ) mechanism in phosphorescent organic light emitting devices. Results show that the TPQ mechanism is mainly caused by charges within the bulk of the emission layer (EML) rather than by charges in the hole transport layer (HTL) or at the HTL/EML interface. Furthermore, charges on the guest rather than those on the host are found to be the most efficient in quenching excitons, revealing that guest polaronic species are the most detrimental to device efficiency. The results also show that direct injection of holes from the HTL into the guest material reduces device efficiency.
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85.60.Jb Light-emitting devices
71.38.-k Polarons and electron-phonon interactions
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence

Tunnel effect causing nonlinear current in few-layer graphene

Quan Wang, Jin Zhang, Shouqi Yuan, and Xinxin Li

Appl. Phys. Lett. 101, 063503 (2012); http://dx.doi.org/10.1063/1.4745206 (4 pages)

Online Publication Date: 8 August 2012

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Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. This paper mainly focuses on the electrical properties of a few layers of graphene (FLG). The I-V curves of the FLG devices pass though the origin, but the relationship between the voltage and current is nonlinear. This phenomenon may be due to tunneling current when voltage is applied to the FLG. Also, charged impurities on the sample cause shifts in the maximum resistance point in FLG R-V curves, with fewer graphene layers corresponding to larger changes in resistance.
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73.40.Gk Tunneling
85.65.+h Molecular electronic devices
72.80.Vp Electronic transport in graphene

Correlation between Ga-O signature and midgap states at the Al2O3/In0.53Ga0.47As interface

Igor Krylov, Arkady Gavrilov, Moshe Eizenberg, and Dan Ritter

Appl. Phys. Lett. 101, 063504 (2012); http://dx.doi.org/10.1063/1.4745012 (5 pages)

Online Publication Date: 9 August 2012

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Al2O3/In0.53Ga0.47As gate stacks were fabricated using different concentrations of NH4OH as a pre-deposition treatment. Increased NH4OH concentrations significantly reduced the C-V weak inversion hump and the measured near midgap interface states density (Dit). X-ray photoelectron spectroscopy (XPS) studies revealed that these changes in the electrical properties were accompanied by a reduction in the amount of the Ga-O bonding while As-As dimers as well as other XPS detected InGaAs surface species did not correlate with the observed Dit trend. Possible explanations for these findings are suggested.
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73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.60.Jv Interfaces; heterostructures; nanostructures
82.30.-b Specific chemical reactions; reaction mechanisms
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Effects of SF6 plasma treatment on electrical characteristics of TaN-Al2O3-InP metal-oxide-semiconductor field-effect transistor

Yanzhen Wang, Yen-Ting Chen, Fei Xue, Fei Zhou, and Jack C. Lee

Appl. Phys. Lett. 101, 063505 (2012); http://dx.doi.org/10.1063/1.4745203 (4 pages)

Online Publication Date: 10 August 2012

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The effects of SF6 plasma treatment of Al2O3 on InP substrate have been investigated in this paper. Electrical characteristics including drive current, effective channel mobility, transconductance, subthreshold swings, etc., have been compared for devices with SF6 plasma treatment at different power (P = 30 or 50 W) for different time (t = 3, 5, or 7 min). With 5 min SF6 plasma treatment at power = 30 W, the maximum drive current is increased by 20% to 60.2 μA/μm and effective channel mobility is increased by 36.7% to 1099 cm2/V s for devices on InP substrate with 7 nm Al2O3 (EOT ∼ 3.4 nm and W/L = 600 μm/10 μm). It is believed S and F atoms are incorporated into Al2O3 bulk and Al2O3/InP interface, so that better oxide quality and a lower interface trap density are achieved by SF6 plasma treatment at optimal power with optimal time duration.
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85.30.Tv Field effect devices
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