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6 Aug 2012

Volume 101, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 062401 (2012); http://dx.doi.org/10.1063/1.4730997 (4 pages)

Mahdi Jamali, Kulothungasagaran Narayanapillai, Jae Hyun Kwon, and Hyunsoo Yang
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The zero temperature coefficient in junctionless nanowire transistors

Renan Doria Trevisoli, Rodrigo Trevisoli Doria, Michelly de Souza, Samaresh Das, Isabelle Ferain, and Marcelo Antonio Pavanello

Appl. Phys. Lett. 101, 062101 (2012); http://dx.doi.org/10.1063/1.4744965 (3 pages) | Cited 1 time

Online Publication Date: 6 August 2012

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This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the series resistance of the devices and its dependence on the temperature. Experimental results of drain current, threshold voltage, and series resistance are presented for both long and short channel n and p-type devices.
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85.30.Tv Field effect devices

Influence of indium cluster on the high and constant background electron density in ternary InxGa1−xN alloys

Chong Li, Fengmin Wu, Shu-Shen Li, Jian-Bai Xia, and Jingbo Li

Appl. Phys. Lett. 101, 062102 (2012); http://dx.doi.org/10.1063/1.4745008 (4 pages) | Cited 1 time

Online Publication Date: 7 August 2012

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First principles calculations and special quasirandom structure approach have been used to study the origin of the unintentional high and constant background electron density observed in InxGa1−xN alloys. Our results show that the formation energy of nitrogen vacancy (VN) surprisingly becomes nearly constant for alloys with relatively high In concentration. In strong contrast, the formation energy of hydrogenated nitrogen vacancy (HN) or interstitial hydrogen (Hi) monotonically decreases as x increases, indicating that neither HN nor Hi, but VN is the main sources of the experiment observed high and constant electron density in the alloys. The underlying mechanism is discussed.
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81.65.-b Surface treatments
82.30.-b Specific chemical reactions; reaction mechanisms
61.72.jd Vacancies

Brillouin scattering determination of the surface acoustic wave velocity in InxGa1−xN: A probe into the elastic constants

R. J. Jiménez-Riobóo, R. Cuscó, R. Oliva, N. Domènech-Amador, C. Prieto, J. Ibáñez, C. Boney, A. Bensaoula, and L. Artús

Appl. Phys. Lett. 101, 062103 (2012); http://dx.doi.org/10.1063/1.4744961 (4 pages)

Online Publication Date: 8 August 2012

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We have determined the surface acoustic wave velocity in InxGa1−xN layers for 0.34<x<0.75 by means of high resolution Brillouin spectroscopy. The sagittal dependence of the surface acoustic velocity has been analyzed by comparing the experimental results with theoretical simulations based on the Green’s function formalism. We find the best agreement with our data when the bowing parameters for the elastic constants recently reported from density functional theory calculations are taken into account. The dependence of the surface acoustic wave velocity on alloy composition is given.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Lm Deformation, plasticity, and creep
62.20.dq Other elastic constants
62.65.+k Acoustical properties of solids
68.35.Iv Acoustical properties

Monitoring structural influences on quantum transport in InAs nanowires

Robert Frielinghaus, Kilian Flöhr, Kamil Sladek, Thomas E. Weirich, Stefan Trellenkamp, Hilde Hardtdegen, Thomas Schäpers, Claus M. Schneider, and Carola Meyer

Appl. Phys. Lett. 101, 062104 (2012); http://dx.doi.org/10.1063/1.4742326 (4 pages) | Cited 1 time

Online Publication Date: 8 August 2012

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A sample design that allows for quantum transport and transmission electron microscopy (TEM) on individual suspended nanostructures is used to investigate moderately n-type doped InAs nanowires (NWs). The nanowires were grown by metal organic vapor phase epitaxy. Universal conductance fluctuations in the nanowires are investigated at temperatures down to 0.35 K. These fluctuations show two different temperature dependences. The very same nanowire segments investigated in transport are subsequently analyzed by TEM revealing crystal phase mixing. However, we find no correspondence between the atomic structure of the wires and the temperature dependences of the conductance fluctuations.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
68.55.A- Nucleation and growth
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.16.Dn Self-assembly

Optical and defect properties of hydrothermal ZnO with low lithium contamination

R. Heinhold, H.-S. Kim, F. Schmidt, H. von Wenckstern, M. Grundmann, R. J. Mendelsberg, R. J. Reeves, S. M. Durbin, and M. W. Allen

Appl. Phys. Lett. 101, 062105 (2012); http://dx.doi.org/10.1063/1.4739515 (5 pages)

Online Publication Date: 8 August 2012

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The removal of lithium and other group I contaminants from hydrothermally grown ZnO results in significant changes in its electrical, optical, and device characteristics. A significant reduction in donor compensation allows the fabrication of low series resistance Schottky contacts with extremely high rectification ratios and also quenches 4 K photoluminescence emission from excitons bound to ionized donors. Three new electron traps with activation energies of 115, 160, and 190 meV are created along with an increase in the activation energy of the dominant shallow donor from 50 to 70 eV which is associated with an accompanying removal of aluminum.
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78.55.Et II-VI semiconductors
85.30.Kk Junction diodes
72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Ey III-V and II-VI semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ei Rectification

Enhanced optical absorption and photocatalytic activity of anatase TiO2 through (Si,Ni) codoping

Yanming Lin, Zhenyi Jiang, Chaoyuan Zhu, Xiaoyun Hu, Xiaodong Zhang, Haiyan Zhu, and Jun Fan

Appl. Phys. Lett. 101, 062106 (2012); http://dx.doi.org/10.1063/1.4745193 (5 pages) | Cited 5 times

Online Publication Date: 9 August 2012

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The electronic and optical properties of (Si,Ni)-codoped anatase TiO2 are investigated using the density functional theory. The calculated results indicate that the synergistic effects of (Si,Ni) codoping can effectively extend the optical absorption edge, which can lead to higher visible-light photocatalytic activity than pure anatase TiO2. To verify the reliability of our calculated results, nanocrystalline (Si,Ni)-codoped TiO2 is synthesized by a sol-gel-solvothermal method, and experimental results also show that the (Si,Ni)-codoped sample exhibits better absorption performance and higher photocatalytic activities than pure TiO2.
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81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
78.40.Ha Other nonmetallic inorganics

“Smart” silicon: Switching between p‐ and n‐conduction under compression

Sergey V. Ovsyannikov, Igor V. Korobeinikov, Natalia V. Morozova, Andrzej Misiuk, Nikolai V. Abrosimov, and Vladimir V. Shchennikov

Appl. Phys. Lett. 101, 062107 (2012); http://dx.doi.org/10.1063/1.4742345 (4 pages) | Cited 2 times

Online Publication Date: 9 August 2012

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We report results of thermoelectric power (Seebeck effect) and Raman spectroscopy studies on undoped and Ge-doped (1.4–2.6 at. %) Czochralski-grown silicon under high pressure to ∼17 GPa. Lattice dynamics of Si:Ge under compression resembles that in Ge-free silicon. But in contrary to undoped silicon, the electrical conduction in Si1−xGex may be reversibly (irreversibly) “switched” from p- to n-type by application of pressure of ∼0.6 GPa (∼0.8–1.5 GPa). Under pressures higher than ∼2 GPa the samples turn to a compensated state. Thus, Si:Ge being a “smart” material that opens emergent perspectives for silicon-based devices. It may be utilized, e.g., as a “smart” substrate for integrated circuits or a “smart” layer in heterostructures.
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72.20.Pa Thermoelectric and thermomagnetic effects
78.30.Am Elemental semiconductors and insulators
81.10.Fq Growth from melts; zone melting and refining
62.50.-p High-pressure effects in solids and liquids

The CuInSe2–CuIn3Se5 defect compound interface: Electronic structure and band alignment

A. Hofmann and C. Pettenkofer

Appl. Phys. Lett. 101, 062108 (2012); http://dx.doi.org/10.1063/1.4739790 (4 pages)

Online Publication Date: 10 August 2012

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The interface formation between stoichiometric chalcopyrite CuInSe2 and the copper-deficient defect phase CuIn3Se5 is investigated by in situ photoelectron spectroscopy. The use of epitaxial samples allows for the preparation of highly defined surfaces and accurate analysis of the electronic structure. Valence band structures measured with synchrotron-based photoelectron spectroscopy are in agreement with density functional theory. We observe a lowering of the top valence band of CuIn3Se5 of 0.29 eV with respect to CuInSe2. The increased optical gap for copper-deficient material leads to aligned conduction bands.
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71.20.Nr Semiconductor compounds
71.55.Ht Other nonmetals
73.20.At Surface states, band structure, electron density of states
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Li Other semiconductors
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

S. Valdueza-Felip, L. Rigutti, F. B. Naranjo, P. Ruterana, J. Mangeney, F. H. Julien, M. González-Herráez, and E. Monroy

Appl. Phys. Lett. 101, 062109 (2012); http://dx.doi.org/10.1063/1.4742157 (4 pages)

Online Publication Date: 10 August 2012

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We study the carrier localization in InN/In0.9Ga0.1N multiple-quantum-wells (MQWs) and bulk InN by means of temperature-dependent photoluminescence and pump-probe measurements at 1.55 μm. The S-shaped thermal evolution of the emission energy of the InN film is attributed to carrier localization at structural defects with an average localization energy of ∼12 meV. Carrier localization is enhanced in the MQWs due to well/barrier thickness and ternary alloy composition fluctuations, leading to a localization energy above 35 meV and longer carrier relaxation time. As a result, the luminescence efficiency in the MQWs is improved by a factor of five over bulk InN.
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78.67.De Quantum wells
81.05.Ea III-V semiconductors
81.07.St Quantum wells
68.65.Fg Quantum wells
78.55.Cr III-V semiconductors
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