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6 Aug 2012

Volume 101, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 101, 062401 (2012); http://dx.doi.org/10.1063/1.4730997 (4 pages)

Mahdi Jamali, Kulothungasagaran Narayanapillai, Jae Hyun Kwon, and Hyunsoo Yang
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Electromechanical properties of freestanding graphene functionalized with tin oxide (SnO2) nanoparticles

L. Dong, J. Hansen, P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, D. Qi, and P. M. Thibado

Appl. Phys. Lett. 101, 061601 (2012); http://dx.doi.org/10.1063/1.4745780 (4 pages)

Online Publication Date: 8 August 2012

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Freestanding graphene membranes were functionalized with SnO2 nanoparticles. A detailed procedure providing uniform coverage and chemical synthesis is presented. Elemental composition was determined using scanning electron microscopy combined with energy dispersive x-ray analysis. A technique called electrostatic-manipulation scanning tunneling microscopy was used to probe the electromechanical properties of functionalized freestanding graphene samples. We found ten times larger movement perpendicular to the plane compared to pristine freestanding graphene and propose a nanoparticle encapsulation model.
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81.05.ue Graphene
77.65.-j Piezoelectricity and electromechanical effects
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Hard x-ray photoelectron spectroscopy study of As and Ga out-diffusion in In0.53Ga0.47As/Al2O3 film systems

C. Weiland, P. Lysaght, J. Price, J. Huang, and J. C. Woicik

Appl. Phys. Lett. 101, 061602 (2012); http://dx.doi.org/10.1063/1.4745207 (4 pages) | Cited 2 times

Online Publication Date: 9 August 2012

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Hard x-ray photoelectron spectroscopy (HAXPES) was performed on In0.53Ga0.47As/Al2O3 gate stacks as deposited and annealed at 400 °C, 500 °C, and 700 °C to test for out-diffusion of substrate elements. Ga and As core-level intensities increase with increasing anneal temperature, while the In intensity decreases. HAXPES was performed at two different beam energies to vary the surface sensitivity; results demonstrate Ga and As out-diffuse into the Al2O3 film. Analysis suggests the presence of an interlayer containing Ga and As oxides, which thickens with increasing anneal temperature. Further diffusion, especially of Ga, into the Al2O3 film is also observed with increasing anneal temperature.
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.55.at Other materials
68.55.J- Morphology of films
61.72.Cc Kinetics of defect formation and annealing
66.30.Lw Diffusion of other defects
79.60.Bm Clean metal, semiconductor, and insulator surfaces
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