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13 Aug 2012

Volume 101, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 101, 071104 (2012); http://dx.doi.org/10.1063/1.4742749 (4 pages)

Judson D. Ryckman and S. M. Weiss
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Subbandgap current collection through the implementation of a doping superlattice solar cell

Michael A. Slocum, David V. Forbes, and Seth M. Hubbard

Appl. Phys. Lett. 101, 073901 (2012); http://dx.doi.org/10.1063/1.4745921 (4 pages)

Online Publication Date: 13 August 2012

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The simulation and fabrication of a multi-period GaAs n-type/intrinsic/p-type/intrinsic (nipi) doping superlattice solar cell have been demonstrated. Devices have been fabricated and characterized, demonstrating a proof of concept for a nipi device contacted via epitaxial regrowth. Current-voltage measurements in the dark and under one sun illumination were simulated and measured experimentally. Efficient current collection was demonstrated with an integrated short circuit current of 23.24 mA/cm2 measured through spectral response. Efficiency improvements from prior results have been achieved, with a maximum one sun AM0 efficiency of 3.42%. Sub-bandgap spectral response shows a 3.3% increase over the bulk response.
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88.40.jm Thin film III-V and II-VI based solar cells
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors

Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells

Kyungsun Ryu, Ajay Upadhyaya, Hyun-Jin Song, Chel-Jong Choi, Ajeet Rohatgi, and Young-Woo Ok

Appl. Phys. Lett. 101, 073902 (2012); http://dx.doi.org/10.1063/1.4746424 (4 pages)

Online Publication Date: 14 August 2012

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This paper reports on an effective chemical etching treatment to remove a boron-rich layer which has a significant negative impact on n-type silicon (Si) solar cells with boron emitter. A nitric acid-grown oxide/silicon nitride stack passivation on the boron-rich layer-etched boron emitter markedly decreases the emitter saturation current density J0e from 430 to 100 fA/cm2. This led to 1.6% increase in absolute cell efficiency including 22 mV increase in open-circuit voltage Voc and 1.9 mA/cm2 increase in short-circuit current density Jsc. This resulted in screen-printed large area (239 cm2) n-type Si solar cells with efficiency of 19.0%.
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88.40.jj Silicon solar cells
81.65.Cf Surface cleaning, etching, patterning
81.65.Rv Passivation
88.40.hj Efficiency and performance of solar cells

Nazca Lines by La ordering in La2/3−xLi3xTiO3 ion-conductive perovskite

K. Mitsuishi, T. Ohnishi, Y. Tanaka, K. Watanabe, I. Sakaguchi, N. Ishida, M. Takeguchi, T. Ohno, D. Fujita, and K. Takada

Appl. Phys. Lett. 101, 073903 (2012); http://dx.doi.org/10.1063/1.4744886 (5 pages)

Online Publication Date: 17 August 2012

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We report an unique planar defect that draws the Nazca Lines in epitaxially grown La2/3−xLi3xTiO3 (LLTO) (x ≈ 0.11) ion-conductive perovskite. Transmission electron microscopy and electron energy loss spectroscopy reveal that the lines are produced by changing the regular arrangement of alternate stacks of La-rich and La-poor layers along the c-axis into all La-rich layers near the defect. The first-principle calculation suggests that the La-rich layers should act as a barrier to Li conductivity and are, therefore, important for the application of epitaxially grown LLTO thin films.
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73.61.Ng Insulators
79.20.Uv Electron energy loss spectroscopy
81.15.Fg Pulsed laser ablation deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase
66.30.hd Ionic crystals
68.55.aj Insulators

Demonstration of high efficiency elastocaloric cooling with large ΔT using NiTi wires

Jun Cui, Yiming Wu, Jan Muehlbauer, Yunho Hwang, Reinhard Radermacher, Sean Fackler, Manfred Wuttig, and Ichiro Takeuchi

Appl. Phys. Lett. 101, 073904 (2012); http://dx.doi.org/10.1063/1.4746257 (4 pages) | Cited 2 times

Online Publication Date: 17 August 2012

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Vapor compression (VC) is by far the most dominant technology for meeting all cooling and refrigeration needs around the world. It is a mature technology with the efficiency of modern compressors approaching the theoretical limit, but its environmental footprint remains a global problem. VC refrigerants such as hydrochloroflurocarbons (HCFCs) and hydrofluorocarbons (HFCs) are a significant source of green house gas emissions, and their global warming potential (GWP) is as high as 1000 times that of CO2 [Buildings Energy Data Book (Building Technologies Program, Department of Energy, 2009)]. There is an urgent need to develop an alternative high-efficiency cooling technology that is affordable and environmentally friendly [A. D. Little, Report For Office of Building Technology State and Community Programs, Department of Energy, 2001]. Here, we demonstrate that elastocaloric cooling (EC), a type of solid-state cooling mechanism based on the latent heat of reversible martensitic transformation, can have the coefficient of performance as high as ≈11, with a directly measured ΔT of 17 °C. The solid-state refrigerant of EC completely eliminates the use of any GWP refrigerants including HCFCs/HFCs.
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07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.30.Kf Martensitic transformations
64.70.K- Solid-solid transitions

Plasmon-enhanced internal photoemission for photovoltaics: Theoretical efficiency limits

Thomas P. White and Kylie R. Catchpole

Appl. Phys. Lett. 101, 073905 (2012); http://dx.doi.org/10.1063/1.4746425 (4 pages) | Cited 2 times

Online Publication Date: 17 August 2012

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Plasmon-enhanced internal photoemission in metal-semiconductor Schottky junctions has recently been proposed as an alternative photocurrent mechanism for solar cells. Here, we identify and discuss the requirements for efficient operation of such cells and analyze their performance limits under standard solar illumination. We show that the maximum efficiency limit is <8% even if perfect optical absorption can be achieved using plasmonic nanostructures. This limit results from the fundamental electronic properties of metallic absorbers. Modifying the electron density of states of the absorber could increase the efficiency to >20%.
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88.40.jp Multijunction solar cells
88.40.hj Efficiency and performance of solar cells

Enhanced performance of photodetector and photovoltaic based on carrier reflector and back surface field generated by doped graphene

Che-Wei Chang, Di-Yan Wang, Wei-Chun Tan, I-Sheng Huang, I-Sheng Wang, Chia-Chun Chen, Ying-Jay Yang, and Yang-Fang Chen

Appl. Phys. Lett. 101, 073906 (2012); http://dx.doi.org/10.1063/1.4746763 (5 pages)

Online Publication Date: 17 August 2012

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We report the influence of carrier reflector and back surface field generated by doped graphene on n-ZnO nanoridges/p-silicon photodetectors and silicon solar cells. It is found that the p-type graphene not only acts as an electron blocking layer, but also helps the collection of photogenerated holes. Quite surprisingly, the on/off ratio of the photodetector with the insertion of doped graphene can be increased by up to 40 times. Moreover, we demonstrate that typical silicon solar cells with the doped graphene, the cell efficiency can be enhanced by about 20%. Our approach would expand numerous applications for graphene-based optoelectronic devices.
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88.40.jj Silicon solar cells
85.60.Gz Photodetectors (including infrared and CCD detectors)
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