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20 Aug 2012

Volume 101, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 101, 081102 (2012); http://dx.doi.org/10.1063/1.4745791 (3 pages)

M. K. Wu, M. Feng, and N. Holonyak, Jr.
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Dispersion compensation for attosecond electron pulses

Peter Hansen, Cory Baumgarten, Herman Batelaan, and Martin Centurion

Appl. Phys. Lett. 101, 083501 (2012); http://dx.doi.org/10.1063/1.4746271 (4 pages) | Cited 1 time

Online Publication Date: 20 August 2012

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We propose a device to compensate for the dispersion of attosecond electron pulses. The device uses only static electric and magnetic fields and therefore does not require synchronization to the pulsed electron source. Analogous to the well-known optical dispersion compensator, an electron dispersion compensator separates paths by energy in space. Magnetic fields are used as the dispersing element, while a Wien filter is used for compensation of the electron arrival times. We analyze a device with a size of centimeters, which can be applied to ultrafast electron diffraction and microscopy, and fundamental studies.
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41.85.Lc Particle beam focusing and bending magnets, wiggler magnets, and quadrupoles

A remotely interrogated all-optical  87Rb magnetometer

B. Patton, O. O. Versolato, D. C. Hovde, E. Corsini, J. M. Higbie, and D. Budker

Appl. Phys. Lett. 101, 083502 (2012); http://dx.doi.org/10.1063/1.4747206 (4 pages) | Cited 1 time

Online Publication Date: 21 August 2012

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Atomic magnetometry was performed at Earth’s magnetic field over a free-space distance of ten meters. Two laser beams aimed at a distant alkali-vapor cell excited and detected the  87Rb magnetic resonance, allowing the magnetic field within the cell to be interrogated remotely. Operated as a driven oscillator, the magnetometer measured the geomagnetic field with ≲3.5 pT precision in a ∼ 2 s data acquisition; this precision was likely limited by ambient field fluctuations. The sensor was also operated in self-oscillating mode with a 5.3 pT/math noise floor. Further optimization will yield a high-bandwidth, fully remote magnetometer with sub-pT sensitivity.
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07.55.Ge Magnetometers for magnetic field measurements
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy

Contrast distortion induced by modulation voltage in scanning capacitance microscopy

M. N. Chang, C. W. Hu, T. H. Chou, and Y. J. Lee

Appl. Phys. Lett. 101, 083503 (2012); http://dx.doi.org/10.1063/1.4747319 (4 pages)

Online Publication Date: 22 August 2012

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With a dark-mode scanning capacitance microscopy (SCM), we directly observed the influence of SCM modulation voltage (MV) on image contrasts. For electrical junctions, an extensive modulated area induced by MV may lead to noticeable changes in the SCM signal phase and intensity, resulting in a narrowed junction image and a broadened carrier concentration profile. This contrast distortion in SCM images may occur even if the peak-to-peak MV is down to 0.3 V. In addition, MV may shift the measured electrical junction depth. The balance of SCM signals components explain these MV-induced contrast distortions.
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07.79.Lh Atomic force microscopes
07.79.Pk Magnetic force microscopes

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Thomas Aichinger and Patrick M. Lenahan

Appl. Phys. Lett. 101, 083504 (2012); http://dx.doi.org/10.1063/1.4747495 (5 pages) | Cited 1 time

Online Publication Date: 22 August 2012

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We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.
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85.30.Tv Field effect devices

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

Yuh-Renn Wu, Ravi Shivaraman, Kuang-Chung Wang, and James S. Speck

Appl. Phys. Lett. 101, 083505 (2012); http://dx.doi.org/10.1063/1.4747532 (4 pages) | Cited 3 times

Online Publication Date: 23 August 2012

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We report on the influence of nanoscale indium fluctuations on physical properties for multiple quantum well (QW) light emitting diodes (LEDs). A commercial grade c-plane LED was analyzed by atom probe tomography, and the indium composition distribution was extracted. The influence of the degree of fluctuation and number of quantum wells were analyzed by a two-dimensional Poisson and drift-diffusion solver with very fine mesh and compared to the experimental result and a simple normal quantum well model. The studies show that the indium fluctuation will significantly impact the device’s internal quantum efficiency, droop behavior, and current-voltage curves. Including the influence of indium-fluctuation gives a better prediction of the device performance.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell

Somnath Mondal, Hung-Yu Chen, Jim-Long Her, Fu-Hsiang Ko, and Tung-Ming Pan

Appl. Phys. Lett. 101, 083506 (2012); http://dx.doi.org/10.1063/1.4747695 (4 pages)

Online Publication Date: 23 August 2012

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We investigate the resistive memory switching behaviors of Yb2O3 thin films for different Ti-dopant concentrations. A higher doping concentration of 9.4% of Ti atom into Yb2O3 thin film causes the switching mechanism to change from bipolar to unipolar behavior. This is ascribed to different chemical compositions of the filament through the oxide film. The reset mechanism is associated with the annihilation of oxygen vacancies and other ionic and electronic defects within or near the interface area of oxide film for bipolar switching, while it is believed to be due to rupture of the conducting filament by local Joule heating effect for unipolar resistive switching. Furthermore, the incorporation of Ti atom into the Yb2O3 memory device exhibits improved electrical performances including low set/reset voltages and good endurance and retention characteristics.
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84.30.Sk Pulse and digital circuits

Short-wavelength tunable Bragg reflectors based on coupling of propagating and cutoff waves: Modeling and experimental studies

A. V. Arzhannikov, N. S. Ginzburg, P. V. Kalinin, A. M. Malkin, N. Yu. Peskov, A. S. Sergeev, S. L. Sinitsky, M. Thumm, and V. Yu. Zaslavsky

Appl. Phys. Lett. 101, 083507 (2012); http://dx.doi.org/10.1063/1.4747149 (4 pages)

Online Publication Date: 24 August 2012

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To advance relativistic masers into the short wavelength region of the millimeter and sub-millimeter wavelength bands, advanced Bragg reflectors based on coupling of propagating and quasi-cutoff waves were proposed in Ginzburg et al., Appl. Phys. Lett. 95, 043504 (2009). In this paper, we present experimental examination of the reflectors of such type, which was carried out in the 4-mm wavelength band. A power reflection coefficient of ∼0.8 was measured in the bandwidth of ∼200–300 MHz. Tunability of the reflection zone by varying the distance between the plates in the frequency band of 3%–5% was demonstrated. Experimental data agree well with the result of 3D simulations.
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42.79.Gn Optical waveguides and couplers
84.40.-x Radiowave and microwave (including millimeter wave) technology
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