APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

20 Aug 2012

Volume 101, Issue 8, Articles (08xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 101, 081102 (2012); http://dx.doi.org/10.1063/1.4745791 (3 pages)

M. K. Wu, M. Feng, and N. Holonyak, Jr.
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds
FREE

Characteristics of [6]phenacene thin film field-effect transistor

Noriko Komura, Hidenori Goto, Xuexia He, Hiroki Mitamura, Ritsuko Eguchi, Yumiko Kaji, Hideki Okamoto, Yasuyuki Sugawara, Shin Gohda, Kaori Sato, and Yoshihiro Kubozono

Appl. Phys. Lett. 101, 083301 (2012); http://dx.doi.org/10.1063/1.4747201 (4 pages) | Cited 2 times

Online Publication Date: 20 August 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility μ as high as 3.7 cm2 V−1 s−1. The similar O2 sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O2 sensing in [6]phenacene FET.
Show PACS
85.30.Tv Field effect devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
FREE

Raman and low temperature photoluminescence spectroscopy of polymer disorder in bulk heterojunction solar cell films

C. Carach, I. Riisness, and M. J. Gordon

Appl. Phys. Lett. 101, 083302 (2012); http://dx.doi.org/10.1063/1.4747320 (5 pages) | Cited 3 times

Online Publication Date: 20 August 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Raman and low temperature photoluminescence (PL) spectroscopies were used to assess how fullerene loading and thermal annealing affect the morphology (e.g., aggregation, π-stacking, and fullerene dispersion) of regio-random and regular poly(3-hexylthiophene) bulk heterojunction films. Large changes in PL and Raman show that phenyl-C61-butyric acid methyl ester (PCBM) begins to significantly hinder planarization (intra-chain) and π-overlap (inter-chain) of polymer chains over a relatively small concentration window (30–40% and 45–55% PCBM for regio-random and regular, respectively). Mild thermal annealing of blended films was seen to restore order (i.e., vibronic PL line shapes, indicative of H-like aggregation), which result from PCBM phase segregation (lower dispersion) and growth of polymer aggregates. Overall, it is demonstrated that low-temperature PL and Raman are highly sensitive and informative metrics to evaluate polymer (dis)order in bulk heterojunction films.
Show PACS
78.66.Qn Polymers; organic compounds
81.40.Gh Other heat and thermomechanical treatments
61.25.hk Polymer melts and blends
64.75.Va Phase separation and segregation in polymer blends/polymeric solutions
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.40.Pg Disordered solids
FREE

Organic single crystal transistor characteristics of single-crystal phase pentacene grown by ionic liquid-assisted vacuum deposition

Yoko Takeyama, Shimpei Ono, and Yuji Matsumoto

Appl. Phys. Lett. 101, 083303 (2012); http://dx.doi.org/10.1063/1.4747148 (4 pages) | Cited 1 time

Online Publication Date: 21 August 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Organic transistor characteristics of single-crystal phase pentacene were investigated. Ionic liquids (ILs) were used as not only a gate dielectric material in the transistors but also a crystallization solvent in vacuum deposition of pentacene. The crystal sizes reached 200 μm and their surface exhibits a molecularly step-and-terrace structure. There was no sign of IL molecules inside the crystal, and the impurity level of 6,13-pentacenequinone was also reduced. The average value of the field-effect mobility was not so inferior to those for the conventional pentacene single crystals, and the highest value exceeded 5 cm2/Vs, with the on/off current ratio of 104.
Show PACS
85.30.Tv Field effect devices
FREE

Homogeneous bulk heterojunction networks via surface energy matching at polymer/fullerene interfaces

Byoung Hoon Lee, Jooyoung Shim, Geunjin Kim, Heejoo Kim, Suhee Song, Hongsuk Suh, and Kwanghee Lee

Appl. Phys. Lett. 101, 083304 (2012); http://dx.doi.org/10.1063/1.4747331 (5 pages)

Online Publication Date: 22 August 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This work presents homogeneous bulk heterojunction (BHJ) networks between a push-pull π-conjugated polymer donor, poly(2,7-(5,5,10,10-tetrakis(2-ethylhexyl)-5,10-dihydroindeno[2,1-a]indene)-alt-5,5-(4,7-bis(2,2-bithien-5-yl)-2,2-dimethyl-2H-benzimidazole)) (PININE-BBTMBI) and a fullerene derivative acceptor, [6,6]-phenyl C71-butyric acid methyl ester (PC71BM). By introducing a bi-thiophene unit between the electron-rich and electron-deficient moieties in a repeating unit, the surface energy of PININE-BBTMBI increased to that of PC71BM, enhancing its miscibility in PININE-BBTMBI/PC71BM blends. Direct evidence obtained via atomic force microscopy and the performance of BHJ solar cells indicate that the introduction of the bi-thiophene unit leads to homogeneous BHJ networks and high-performance BHJ solar cells by matching the surface energies at the polymer/fullerene interfaces.
Show PACS
88.40.jp Multijunction solar cells
88.40.jr Organic photovoltaics
FREE

Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors

Akash Nigam, Günther Schwabegger, Mujeeb Ullah, Rizwan Ahmed, Ivan I. Fishchuk, Andrey Kadashchuk, Clemens Simbrunner, Helmut Sitter, Malin Premaratne, and V. Ramgopal Rao

Appl. Phys. Lett. 101, 083305 (2012); http://dx.doi.org/10.1063/1.4747451 (4 pages)

Online Publication Date: 22 August 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electron mobility was found to increase (decrease) upon applied compressive (tensile) strain, respectively, when a high-performance flexible C60-based organic field-effect transistor (OFET) was subjected to different bending radii. The observed almost twofold relative change in the electron mobility is considerably larger than that reported before for pentacene-based OFETs. Moreover, the strain dependency of electron mobility in C60 films is strongly anisotropic with respect to the strain direction measured relative to the current flow. Analysis within a hopping-transport model for OFET mobility suggests that the observed strain dependency on electron transport is dominated mostly by the change of inter-grain coupling in polycrystalline C60 films.
Show PACS
85.30.Tv Field effect devices
85.65.+h Molecular electronic devices
FREE

Injected charge extraction by linearly increasing voltage for bimolecular recombination studies in organic solar cells

Ardalan Armin, Marrapan Velusamy, Paul L. Burn, Paul Meredith, and Almantas Pivrikas

Appl. Phys. Lett. 101, 083306 (2012); http://dx.doi.org/10.1063/1.4747330 (5 pages)

Online Publication Date: 23 August 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a technique called “injected charge extraction by linearly increasing voltage” (i-CELIV) and apply it to evaluate bimolecular recombination in organic solar cells. The experimental setup is straightforward requiring no laser or optical-electrical pulse synchronization. The applicability of the method is discussed and non-Langevin recombination in a model poly(3-n-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PC60BM) solar cell is quantified and confirmed. Further, Langevin recombination in the low optical gap high efficiency blend, poly[2,6-(4,4-bis-{2-ethylhexyl}-4H-cyclopenta[2,1-b;3,4-b′]-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]:phenyl-C71-butyric acid methyl ester is reported using i-CELIV.
Show PACS
88.40.jr Organic photovoltaics
FREE

Response delay caused by dielectric relaxation of polymer insulators for organic transistors and resolution method

Kouji Suemori and Toshihide Kamata

Appl. Phys. Lett. 101, 083307 (2012); http://dx.doi.org/10.1063/1.4747804 (4 pages)

Online Publication Date: 23 August 2012

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigated the effect of dielectric relaxation in polymer gate insulators on the device characteristics of organic field effect transistors. Dielectric relaxation of polymer gate insulators caused an increase in drain current (ID) in a period starting immediately after the application of the gate voltage (VG) and lasting several milliseconds. This induced an apparent delay in the response of ID. Based on the observed results, we suggested an ideal gate insulator to achieve organic field effect transistors that have a fast response and high performance.
Show PACS
85.30.Tv Field effect devices
77.22.Gm Dielectric loss and relaxation
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close