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20 Aug 2012

Volume 101, Issue 8, Articles (08xxxx)

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Appl. Phys. Lett. 101, 081102 (2012); http://dx.doi.org/10.1063/1.4745791 (3 pages)

M. K. Wu, M. Feng, and N. Holonyak, Jr.
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Patterned superhydrophobic surface based on Pd-based metallic glass

Ting Xia, Ning Li, Yue Wu, and Lin Liu

Appl. Phys. Lett. 101, 081601 (2012); http://dx.doi.org/10.1063/1.4747327 (4 pages) | Cited 2 times

Online Publication Date: 20 August 2012

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Without any modification or post-treatment, superhydrophobic surfaces with good stability were fabricated by hot-embossing honeycomb patterns on Pd40Cu30Ni10P20 bulk metallic glass (BMG). The water contact angle reaches above 150° when the pitch between adjacent cells is larger than the critical size of 115.5 μm. The wetting behavior on the patterned BMG can be well rationalized in terms of the modified Cassie-Baxter theory [A. B. D. Cassie and S. Baxter, Trans. Faraday Soc. 40, 546 (1944)] by considering surface energy gradient. The achievement of the superhydrophobicity on BMG surface opens a window for the functional applications of metallic glasses.
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68.35.bd Metals and alloys
61.43.Fs Glasses
68.03.Cd Surface tension and related phenomena
68.08.Bc Wetting

Solid phase epitaxy of ultra-shallow Sn implanted Si observed using high-resolution Rutherford backscattering spectrometry

T. K. Chan, F. Fang, A. Markwitz, and T. Osipowicz

Appl. Phys. Lett. 101, 081602 (2012); http://dx.doi.org/10.1063/1.4747487 (4 pages)

Online Publication Date: 21 August 2012

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We present detailed observations of the solid phase epitaxy process in Sn-implanted Si samples with nanometric depth resolution within a 50 nm ultra-shallow region beneath the surface. Measurements were made using high-resolution Rutherford backscattering spectrometry coupled with the ion channeling technique. Samples with Sn ions implanted onto Si substrates with and without prior Si+ self-amorphization implantation process show different crystal regrowth characteristics during annealing. Regrowth proceeds at a non-uniform rate up to a certain depth before stopping, and an Arrhenius-type defect density limiting model of crystal regrowth is proposed to account for this effect.
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81.05.Cy Elemental semiconductors
81.15.Np Solid phase epitaxy; growth from solid phases
61.72.uf Ge and Si
68.55.ag Semiconductors
61.72.Cc Kinetics of defect formation and annealing
61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Molecular beam epitaxy of bilayer Bi(111) films on topological insulator Bi2Te3: A scanning tunneling microscopy study

Mu Chen, Jun-Ping Peng, Hui-Min Zhang, Li-Li Wang, Ke He, Xu-Cun Ma, and Qi-Kun Xue

Appl. Phys. Lett. 101, 081603 (2012); http://dx.doi.org/10.1063/1.4747715 (4 pages) | Cited 1 time

Online Publication Date: 21 August 2012

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We report on molecular beam epitaxy growth of bilayer Bi(111) films on topological insulator Bi2Te3. In situ scanning tunneling microscopy/spectroscopy shows that Bi growth mode changes from quasi bilayer-by-bilayer to step-flow with increasing substrate temperature. Bilayer Bi(111) exhibits an electron donor behavior, causing an 80 meV downshift of the Dirac point of Bi2Te3. Local work function difference between the bilayer films and Bi2Te3 films is measured to be 390 meV. Based on the observations, we propose a schematic energy-band diagram which reveals band bending effect at the Bi/Bi2Te3 interface. Our work paves a way to explore the exotic topological properties of bilayer islands and thin films of Bi.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.aj Insulators
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
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