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27 Aug 2012

Volume 101, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 101, 091102 (2012); http://dx.doi.org/10.1063/1.4747168 (3 pages)

Hagay Shpaisman, Bhaskar Jyoti Krishnatreya, and David G. Grier
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An experimental investigation of electrically induced-birefringence of Kerr effect in polymer-stabilized blue phase liquid crystals resulting from orientations of liquid crystals

Hung-Shan Chen, Shih-Ya Ni, and Yi-Hsin Lin

Appl. Phys. Lett. 101, 093501 (2012); http://dx.doi.org/10.1063/1.4748117 (4 pages)

Online Publication Date: 27 August 2012

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The electrically induced-birefringence (EIB) of Kerr effect of polymer-stabilized blue phase liquid crystals (PSBP-LCs) is experimentally investigated by discussing the orientations of liquid cryastal (LC) molecules. The results show that the EIB of Kerr effect of PSBP-LCs mainly results from the orientations of LC molecules when the voltage is larger than the voltage of disappearance of the lattice deformation; otherwise, lattice deformation is also involved in the contribution of EIB besides the orientations of LC molecules. This study proves that the orientations of liquid crystals indeed play roles in the EIB of Kerr effect in PSBP-LCs.
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78.20.Jq Electro-optical effects
61.30.Mp Blue phases and other defect-phases
78.20.Fm Birefringence

Electromagnetically induced transparencies in a closed waveguide with high efficiency and wide frequency band

Xian Qi Lin, Jia Wei Yu, Yuan Jiang, Jun Ye Jin, and Yong Fan

Appl. Phys. Lett. 101, 093502 (2012); http://dx.doi.org/10.1063/1.4748121 (3 pages) | Cited 1 time

Online Publication Date: 27 August 2012

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We propose an effective method to alleviate the conflict between large group delay and wide frequency band in electromagnetically induced transparency (EIT) design. Two kinds of electrically induced transparency (E-IT) and magnetically induced transparency (M-IT) are proposed, respectively. Then an EIT with wide transparency window is developed by combining the independent E-IT and M-IT structures. All of the transparencies are designed in a closed waveguide system, and high efficiency is obtained at the same time. One sample is fabricated and the bandwidth is increased to more than 3 times without decrease of the group delay and increase of the size.
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42.79.Gn Optical waveguides and couplers
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Analysis of electrical parameters of p-channel silicon nanowire transistors with selectively thinned channels on plastics

M. Lee, Y. Jeon, and S. Kim

Appl. Phys. Lett. 101, 093503 (2012); http://dx.doi.org/10.1063/1.4747812 (4 pages) | Cited 1 time

Online Publication Date: 27 August 2012

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We present a technique for thinning the channel region of silicon nanowires (SiNWs) selectively while maintaining a thickness of the source/drain (S/D) regions in an attempt to minimize the parasitic series resistance of SiNW transistors (SNWTs). By transferring the as-fabricated SiNWs onto a plastic substrate, p-SNWTs were fabricated on a plastic substrate, and carrier transport in p-SNWTs was investigated by extracting electrical parameters using the YΦ method, which include mobility attenuation factors, parasitic series resistance (Rsd), and effective channel resistance. It is shown that, in the strong inversion region, the parameters fit the measurement data well and that degradation in device performance in our p-SNWTs under high transverse electric fields is dominated by surface roughness scattering, with minimal Rsd impact on it due to the relatively thick S/D regions.
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85.30.Tv Field effect devices
85.30.Pq Bipolar transistors
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Side-gate graphene field-effect transistors with high transconductance

B. Hähnlein, B. Händel, J. Pezoldt, H. Töpfer, R. Granzner, and F. Schwierz

Appl. Phys. Lett. 101, 093504 (2012); http://dx.doi.org/10.1063/1.4748112 (3 pages)

Online Publication Date: 29 August 2012

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We have fabricated epitaxial side-gate graphene field-effect transistors (FETs) with high transconductance. A side-gate graphene FET with 55 × 60 nm2 active channel dimensions and a lateral gate-channel separation of 95 nm showing a high transconductance of 590 mS/mm is presented. An estimation of the electrostatic gate-channel capacitance of epitaxial side-gate graphene FETs shows that it is in the same order as the electrostatic gate capacitance of common top-gate graphene MOSFETs justifying the high transconductances of our devices. The results of the present paper demonstrate the potential of the side-gate architecture for graphene transistors.
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85.30.Tv Field effect devices
81.05.ue Graphene

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafría

Appl. Phys. Lett. 101, 093505 (2012); http://dx.doi.org/10.1063/1.4748115 (4 pages)

Online Publication Date: 29 August 2012

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The gate leakage current of AlGaN/GaN (on silicon) high electron mobility transistor (HEMT) is investigated at the micro and nanoscale. The gate current dependence (25–310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale.
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85.30.Tv Field effect devices

P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes

A. V. Sampath, Q. G. Zhou, R. W. Enck, D. McIntosh, H. Shen, J. C. Campbell, and M. Wraback

Appl. Phys. Lett. 101, 093506 (2012); http://dx.doi.org/10.1063/1.4748793 (4 pages)

Online Publication Date: 29 August 2012

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A p-type interface charge control layer (PICCL) is introduced that enables optimization of the net positive polarization induced interface charge at the GaN/SiC interface in GaN/SiC separate absorption and multiplication avalanche photodiodes (SAM-APDs) by varying its thickness. The response from SAM-APDs with PICCL thickness less than 10 nm has an anomalous shape at all bias attributed to the collection of carriers generated directly in the SiC layer. Devices with a 15 nm thick PICCL exhibit GaN related response at high bias that is indicative of punch-through of the electric field into the GaN absorption region due to optimization of the net interface charge.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Bipolar effects in unipolar junctionless transistors

Mukta Singh Parihar, Dipankar Ghosh, G. Alastair Armstrong, Ran Yu, Pedram Razavi, and Abhinav Kranti

Appl. Phys. Lett. 101, 093507 (2012); http://dx.doi.org/10.1063/1.4748909 (3 pages) | Cited 3 times

Online Publication Date: 29 August 2012

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In this work, we analyze hysteresis and bipolar effects in unipolar junctionless transistors. A change in subthreshold drain current by 5 orders of magnitude is demonstrated at a drain voltage of 2.25 V in silicon junctionless transistor. Contrary to the conventional theory, increasing gate oxide thickness results in (i) a reduction of subthreshold slope (S-slope) and (ii) an increase in drain current, due to bipolar effects. The high sensitivity to film thickness in junctionless devices will be most crucial factor in achieving steep transition from ON to OFF state.
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85.30.Pq Bipolar transistors

Band offsets in ZrO2/InGaZnO4 heterojunction

Jianke Yao, Shengdong Zhang, and Li Gong

Appl. Phys. Lett. 101, 093508 (2012); http://dx.doi.org/10.1063/1.4750069 (4 pages)

Online Publication Date: 30 August 2012

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X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (△EV) of amorphous InGaZnO4 (a-IGZO)/ZrO2 heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of △EV = 0 eV was obtained by using the Ga and Zn 2p3 and In 3d3 energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO2, respectively, this would indicate a conduction band offset of 2.7 eV in the system.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Jv Interfaces; heterostructures; nanostructures
73.21.Ac Multilayers
81.15.Cd Deposition by sputtering

Vertically stacked individually tunable nanowire field effect transistors for low power operation with ultrahigh radio frequency linearity

Yi Song, Jun Luo, and Xiuling Li

Appl. Phys. Lett. 101, 093509 (2012); http://dx.doi.org/10.1063/1.4747448 (4 pages)

Online Publication Date: 30 August 2012

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In this letter, we present an experimentally feasible design of vertically stacked nanowire (NW) gate-all-around (GAA) metal-oxide-semiconductor field effect transistors (MOSFETs) for operation in radio-frequency (RF) circuits with ultrahigh linearity. We demonstrate that by properly tuning the diameters and doping levels of individual NWs in the vertical stack, a much higher third order intercept point is achieved compared to single nanowire designs, without degrading other performance metrics. This methodology for improving linearity overcomes the design tradeoff between RF linearity and power supply, and should be applicable to multi-stack nanowire GAA MOSFETs of all materials.
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85.30.Tv Field effect devices
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