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27 Aug 2012

Volume 101, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 101, 091102 (2012); http://dx.doi.org/10.1063/1.4747168 (3 pages)

Hagay Shpaisman, Bhaskar Jyoti Krishnatreya, and David G. Grier
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Schottky solar cells based on CsSnI3 thin-films

Zhuo Chen, Jian J. Wang, Yuhang Ren, Chonglong Yu, and Kai Shum

Appl. Phys. Lett. 101, 093901 (2012); http://dx.doi.org/10.1063/1.4748888 (4 pages)

Online Publication Date: 27 August 2012

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We describe a Schottky solar cell based on the perovskite semiconductor CsSnI3 thin-film. The cell consists of a simple layer structure of indium-tin-oxide/CsSnI3/Au/Ti on glass substrate. The measured power conversion efficiency is 0.9%, which is limited by the series and shunt resistance. The influence of light intensity on open-circuit voltage and short-circuit current supports the Schottky solar cell model. Additionally, the spectrally resolved short-circuit current was measured, confirming the unintentionally doped CsSnI3 is of p-type characteristics. The CsSnI3 thin-film was synthesized by alternately depositing layers of SnCl2 and CsI on glass substrate followed by a thermal annealing process.
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88.40.hj Efficiency and performance of solar cells
73.61.Ga II-VI semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Measured efficiency of a ZnO nanostructured diode piezoelectric energy harvesting device

J. Briscoe, E. Bilotti, and S. Dunn

Appl. Phys. Lett. 101, 093902 (2012); http://dx.doi.org/10.1063/1.4749279 (4 pages) | Cited 2 times

Online Publication Date: 30 August 2012

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We used controlled bending of a ZnO/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) diode at known strain rates to measure the mechanical-to-electrical energy conversion efficiency. The mechanical energy input into the nanostructured diode was measured as 330 ± 2 nJ cm−2. The electrical energy output was calculated by integrating the product of the short-circuit current and open-circuit voltage over time. This gives a measured external efficiency of the device at a bending rate of 500 mm/min of 0.0067%. The efficiency increased exponentially with bending rate, though this increase must slow as the mechanical coupling efficiency is approached, which gives a maximum possible efficiency of 23% for ZnO.
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84.60.-h Direct energy conversion and storage
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.Kk Junction diodes

Origin of breakdown mechanism in multicrystalline silicon solar cells

B. Y. Zhang, C. Yang, W. F. Liu, and A. M. Liu

Appl. Phys. Lett. 101, 093903 (2012); http://dx.doi.org/10.1063/1.4749821 (4 pages)

Online Publication Date: 30 August 2012

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The local breakdown behavior of multicrystalline silicon solar cells occurring at reverse bias voltages of −10 V has been investigated by means of electroluminescence images and temperature dependent current density-voltage (J-V) measurements. Identification of temperature coefficient of breakdown current indicates that Zener effect is the dominating mechanism of the local breakdown (so-called type II breakdown). Investigations of the carrier transport mechanism under forward bias voltage suggest that there exist a large amount of defects in depletion region. The origin of type II breakdown is attributed to the defects in depletion region.
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88.40.jj Silicon solar cells
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