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27 Aug 2012

Volume 101, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 101, 091102 (2012); http://dx.doi.org/10.1063/1.4747168 (3 pages)

Hagay Shpaisman, Bhaskar Jyoti Krishnatreya, and David G. Grier
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Strong exchange bias with the (110)-oriented BiFeO3 films

Feiming Bai, Guo Yu, Yicheng Wang, Lichuan Jin, Huizhong Zeng, Xiaoli Tang, Zhiyong Zhong, and Huaiwu Zhang

Appl. Phys. Lett. 101, 092401 (2012); http://dx.doi.org/10.1063/1.4748160 (5 pages) | Cited 1 time

Online Publication Date: 27 August 2012

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Epitaxial BiFeO3 films were grown on the (001)-, (110)-, and (111)-oriented SrTiO3 substrates. Using CoFe as ferromagnetic layer, we have shown that both large exchange bias and coercive field enhancement can be observed in the (001)- and (110)-oriented BiFeO3. But no exchange bias was found in the (111)-oriented BiFeO3 films, which can be understood by the lack of either 109° or 71° ferroelectric domain walls and the preservation of the spatial modulated cycloid spin structure. The observation of large exchange bias field with the (110)-oriented BiFeO3 film may lead to an alternative choice towards reversible control exchange bias by electrical field.
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75.85.+t Magnetoelectric effects, multiferroics
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
77.80.-e Ferroelectricity and antiferroelectricity
77.80.Dj Domain structure; hysteresis
68.55.at Other materials
77.22.Ej Polarization and depolarization

Prevention of dewetting during annealing of FePt films for bit patterned media applications

A. T. McCallum, D. Kercher, J. Lille, D. Weller, and O. Hellwig

Appl. Phys. Lett. 101, 092402 (2012); http://dx.doi.org/10.1063/1.4748162 (4 pages) | Cited 3 times

Online Publication Date: 27 August 2012

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We investigated different fabrication methods for (002) textured high anisotropy L10-FePt thin continuous films. While depositing at elevated temperature or post-annealing yields discontinuous or very rough films unsuitable for bit patterned media (BPM) fabrication, post-annealing with an additional SiO2 cap layer results in smooth continuous L10-FePt thin films that can be used for patterning. The SiO2 layer can be removed after annealing without significantly damaging the FePt, thus allowing additional deposition of lower anisotropy layers for forming exchange coupled composite or other layered BPM structures.
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81.05.Bx Metals, semimetals, and alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.40.Gh Other heat and thermomechanical treatments
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy

Information-signal-transfer rate and energy loss in coupled vortex-state networks

Ji-Hye Kim, Ki-Suk Lee, Hyunsung Jung, Dong-Soo Han, and Sang-Koog Kim

Appl. Phys. Lett. 101, 092403 (2012); http://dx.doi.org/10.1063/1.4748885 (4 pages) | Cited 1 time

Online Publication Date: 28 August 2012

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We employed analytical and micromagnetic numerical calculations to elucidate coupled-vortex-gyration-enabled information-signal transfer and the related energy attenuation between vortex-state nanodisks. Specifically, we explored the vortex-gyration transfer rate and the energy attenuation coefficient in terms of the material parameters and dimensions of the coupled disks. Both the micromagnetic simulation and analytical results indicated that the transfer rate is determined by the relative polarization configuration, the saturation magnetization Ms, the radius (R)-to-thickness (L) ratio (R/L) of the given magnetic disks, and the interdistance, whereas the energy attenuation is governed by the intrinsic damping constant as well as the values of Ms, L, and R of the single disks. This work provides a foundation for manipulation of the technologically essential parameters in signal processing, namely speed and energy loss, based on coupled vortex-state networks.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
02.60.-x Numerical approximation and analysis

Crossover to striped magnetic domains in Fe1−xGax magnetostrictive thin films

M. Barturen, B. Rache Salles, P. Schio, J. Milano, A. Butera, S. Bustingorry, C. Ramos, A. J. A. de Oliveira, M. Eddrief, E. Lacaze, F. Gendron, V. H. Etgens, and M. Marangolo

Appl. Phys. Lett. 101, 092404 (2012); http://dx.doi.org/10.1063/1.4748122 (4 pages) | Cited 1 time

Online Publication Date: 28 August 2012

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We have studied the magnetic properties at room temperature of Fe1−xGax (FeGa) epitaxial thin films grown on ZnSe/GaAs(100) for 0.14 ≤ x ≤ 0.29 range concentration, and film thicknesses, d = 36 and 72 nm. The study was performed by means of magnetometric measurements and magnetic force microscopy scans. Increasing x promotes the loss of the four-fold magnetic-crystalline anisotropy associated to an Fe-like behavior, which is lost completely above x = 0.20. Stripe domains with rotatable anisotropy are observed even in samples in which the theoretical conditions for stripe appearance are not completely fulfilled. An unexpected “saw-tooth” stripe structure has been found under certain conditions.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.70.Ak Magnetic properties of monolayers and thin films
75.80.+q Magnetomechanical effects, magnetostriction
75.30.Gw Magnetic anisotropy

Spin-wave excitations induced by spin current through a magnetic point contact with a confined domain wall

Hiroko Arai, Hiroshi Tsukahara, and Hiroshi Imamura

Appl. Phys. Lett. 101, 092405 (2012); http://dx.doi.org/10.1063/1.4745777 (3 pages)

Online Publication Date: 28 August 2012

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Using micromagnetic simulations, we studied spin-wave excitations induced by spin current through a nanometer-sized magnetic point contact with a confined domain wall. We found that the spin-wave excitations could be classified into three different modes by their spatial distribution profiles and oscillation frequencies. One is a localized mode while the other two are spreading modes. The oscillation frequency of the localized mode can be controlled in a wide range from 5 GHz to 147 GHz by varying the applied current density.
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75.30.Ds Spin waves
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Ch Domain walls and domain structure
75.78.Cd Micromagnetic simulations
75.78.Fg Dynamics of domain structures

Low-temperature ordering of FePt thin films induced by glow-discharge ion bombardment

F. T. Yuan, Jen-Hwa Hsu, A. C. Sun, S. N. Hsiao, and H. Y. Lee

Appl. Phys. Lett. 101, 092406 (2012); http://dx.doi.org/10.1063/1.4749274 (5 pages)

Online Publication Date: 30 August 2012

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This study investigates the effect of glow-discharge induced ion bombardment (IB) on low-temperature ordering in FePt films. H, He, and Ar ions are used. Extensive ordering occurs at 300 °C via IB at energy below sputtering threshold, achieving the degree of ordering comparable to 400 °C of thermal annealing. Distinct ordering mechanism is identified. H-IB films undergo grain-growth-dominated transformation, similar to thermal annealing. However, Ar-IB modifies diffusion behavior causing nucleation-controlled process, realizing high ordering and refined microstructure simultaneously. The mechanisms can be thoroughly elucidated by diffusion-modified nucleation-growth kinetics. The results significantly contribute to efforts in microstructure engineering for advanced thin film devices.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
61.80.Jh Ion radiation effects
61.82.Bg Metals and alloys
68.55.A- Nucleation and growth
81.40.Gh Other heat and thermomechanical treatments

Nanostructured thin manganite films in megagauss magnetic field

S. Balevičius, N. Žurauskienė, V. Stankevič, S. Keršulis, V. Plaušinaitienė, A. Abrutis, S. Zherlitsyn, T. Herrmannsdörfer, J. Wosnitza, and F. Wolff-Fabris

Appl. Phys. Lett. 101, 092407 (2012); http://dx.doi.org/10.1063/1.4749820 (4 pages) | Cited 1 time

Online Publication Date: 30 August 2012

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We report on the use of the colossal magnetoresistance (CMR) effect in manganites for the measurement of pulsed magnetic fields up to the megagauss limit. To increase the application range in a magnetic field, we fabricated nanostructured La-Sr-Mn-O films consisting of nanocrystallites cummulated into clusters separated by highly amorphous inter-cluster boundaries. We demonstrate that the CMR effect does not saturate in these films at 77 K up to 91.4 T. Moreover, the magnetoresistance behavior at 290 K shows that nanostructured manganite films are promising candidates for the development of magnetic field scalar sensors operating in wide field and temperature ranges.
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81.16.-c Methods of micro- and nanofabrication and processing
75.75.Cd Fabrication of magnetic nanostructures
75.70.Ak Magnetic properties of monolayers and thin films
75.47.Gk Colossal magnetoresistance
81.07.Bc Nanocrystalline materials
75.47.Lx Magnetic oxides
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