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27 Aug 2012

Volume 101, Issue 9, Articles (09xxxx)

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Appl. Phys. Lett. 101, 091102 (2012); http://dx.doi.org/10.1063/1.4747168 (3 pages)

Hagay Shpaisman, Bhaskar Jyoti Krishnatreya, and David G. Grier
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Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

B. Mazumder, M. H. Wong, C. A. Hurni, J. Y. Zhang, U. K. Mishra, and J. S. Speck

Appl. Phys. Lett. 101, 091601 (2012); http://dx.doi.org/10.1063/1.4748116 (5 pages) | Cited 1 time

Online Publication Date: 27 August 2012

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In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (000math) GaN substrates. An NH3 assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al2O3 templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
66.30.-h Diffusion in solids
68.35.Ct Interface structure and roughness

Near dispersion-less surface plasmon polariton resonances at a metal-dielectric interface with patterned dielectric on top

Sachin Kasture, P. Mandal, Amandev Singh, Andrew Ramsay, A. S. Vengurlekar, S. Dutta Gupta, Vladimir Belotelov, and Achanta Venu Gopal

Appl. Phys. Lett. 101, 091602 (2012); http://dx.doi.org/10.1063/1.4749277 (4 pages)

Online Publication Date: 29 August 2012

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We report possibility of surface plasmon polariton modes that can be excited by incident light of a fixed frequency coming at wide angles. We experimentally show such modes in structures with smooth dielectric-metal-dielectric interfaces having 2-D dielectric patterns on top. Calculated field profile establishes the field localization at the metal-dielectric interfaces. We show that the position and dispersion of the excited modes can be controlled by the excitation geometry and the 2-D pattern.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
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