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Appl. Phys. Lett. 102, 023107 (2013); http://dx.doi.org/10.1063/1.4776221 (5 pages)

Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots

Meng Sun1, Paul J. Simmonds2, Ramesh Babu Laghumavarapu1, Andrew Lin1, Charles J. Reyner1, Hsin-Sheng Duan2,3, Baolai Liang2, and Diana L. Huffaker1,2

1Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA
2California NanoSystems Institute, University of California, Los Angeles, California 90095, USA
3Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA

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(Received 31 October 2012; accepted 28 December 2012; published online 16 January 2013)

The structural and optical properties of InAs self-assembled quantum dots buried in AlAs0.56Sb0.44 barriers can be controlled using GaAs1−xSbx cladding layers. These cladding layers allow us to manage the amount of Sb immediately underneath and above the InAs quantum dots. The optimal cladding scheme has a GaAs layer beneath the InAs, and a GaAs0.95Sb0.05 layer above. This scheme results in improved dot morphology and significantly increased photoluminescence (PL) intensity. Both power-dependent and time-resolved photoluminescence confirm that the quantum dots have type-II band alignment. Enhanced carrier lifetimes in this quantum dot system show great potential for application in intermediate band solar cells.

© 2013 American Institute of Physics

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KEYWORDS, PACS, and IPC

PACS

International Patent Classification (IPC)

  • C09K11/00

    Luminescent, e.g. electroluminescent, chemiluminescent, materials

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ISSN

0003-6951 (print)  
1077-3118 (online)

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