LOG IN or SELECT A PURCHASE OPTION:
Appl. Phys. Lett. 102, 023107 (2013); http://dx.doi.org/10.1063/1.4776221 (5 pages)
Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots
(Received 31 October 2012; accepted 28 December 2012; published online 16 January 2013)
© 2013 American Institute of Physics
RELATED DATABASES
KEYWORDS, PACS, and IPC
Keywords
aluminium compounds, carrier lifetime, claddings, gallium arsenide, III-V semiconductors, indium compounds, interface structure, photoluminescence, self-assembly, semiconductor quantum dots, surface morphology, time resolved spectra
PACS
International Patent Classification (IPC)
Luminescent, e.g. electroluminescent, chemiluminescent, materials
ARTICLE DATA
References
A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997).A. Martí, E. Antolín, C. R. Stanley, C. D. Farmer, N. López, P. Díaz, E. Cánovas, P. G. Linares, and A. Luque, Phys. Rev. Lett. 97, 247701 (2006).
S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, S. G. Bailey, and D. M. Wilt, Appl. Phys. Lett. 92, 123512 (2008)APPLAB000092000012123512000001.
A. Luque, A. Martí, C. Stanley, N. López, L. Cuadra, D. Zhou, J. L. Pearson, and A. McKee, J. Appl. Phys. 96, 903 (2004)JAPIAU000096000001000903000001.
R. Oshima, A. Takata, and Y. Okada, Appl. Phys. Lett. 93, 083111 (2008)APPLAB000093000008083111000001.
V. Popescu, G. Bester, M. C. Hanna, A. G. Norman, and A. Zunger, Phys. Rev. B 78, 205321 (2008).
R. B. Laghumavarapu, A. Moscho, A. Khoshakhlagh, M. El-Emawy, L. F. Lester, and D. L. Huffaker, Appl. Phys. Lett. 90, 173125 (2007)APPLAB000090000017173125000001.
N. Ahsan, N. Miyashita, M. Monirul Islam, K. Man Yu, W. Walukiewicz, and Y. Okada, Appl. Phys. Lett. 100, 172111 (2012)APPLAB000100000017172111000001.
Y. Okada, T. Morioka, K. Yoshida, R. Oshima, Y. Shoji, T. Inoue, and T. Kita, J. Appl. Phys. 109, 024301 (2011)JAPIAU000109000002024301000001.
P. G. Linares, A. Martí, E. Antolín, and A. Luque, J. Appl. Phys. 109, 014313 (2011)JAPIAU000109000001014313000001.
S. P. Bremner, M. Y. Levy, and C. B. Honsberg, Appl. Phys. Lett. 92, 171110 (2008)APPLAB000092000017171110000001.
P. J. Simmonds, R. Babu Laghumavarapu, M. Sun, A. Lin, C. J. Reyner, B. Liang, and D. L. Huffaker, Appl. Phys. Lett. 100, 243108 (2012)APPLAB000100000024243108000001.
J. M. Ulloa, R. Gargallo-Caballero, M. Bozkurt, M. del Moral, A. Guzmán, P. M. Koenraad, and A. Hierro, Phys. Rev. B 81, 165305 (2010).
J. C. Harmand, L. H. Li, G. Patriarche, and L. Travers, Appl. Phys. Lett. 84, 3981 (2004)APPLAB000084000020003981000001.
T. Yamauchi, Y. Matsuba, L. Bolotov, M. Tabuchi, and A. Nakamura, Appl. Phys. Lett. 77, 4368 (2000)APPLAB000077000026004368000001.
Y. I. Mazur, V. G. Dorogan, G. J. Salamo, G. G. Tarasov, B. L. Liang, C. J. Reyner, K. Nunna, and D. L. Huffaker, Appl. Phys. Lett. 100, 033102 (2012)APPLAB000100000003033102000001.
Y. S. Chiu, M. H. Ya, W. S. Su, and Y. F. Chen, J. Appl. Phys. 92, 5810 (2002)JAPIAU000092000010005810000001.
K. Suzuki, R. A. Hogg, and Y. Arakawa, J. Appl. Phys. 85, 8349 (1999)JAPIAU000085000012008349000001.
L. Shterengas, R. Kaspi, A. P. Ongstad, S. Suchalkin, and G. Belenky, Appl. Phys. Lett. 91, 101106 (2007)APPLAB000091000010101106000001.
K. Gradkowski, N. Pavarelli, T. J. Ochalski, D. P. Williams, J. Tatebayashi, G. Huyet, E. P. O'Reilly, and D. L. Huffaker, Appl. Phys. Lett. 95, 061102 (2009)APPLAB000095000006061102000001.
W.-H. Chang, Y.-A. Liao, W.-T. Hsu, M.-C. Lee, P.-C. Chiu, and J.-I. Chyi, Appl. Phys. Lett. 93, 033107 (2008)APPLAB000093000003033107000001.
For access to citing articles, you need to log in.
Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)

















This Publication
Scitation
Google Scholar
PubMed