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14 Jan 2013

Volume 102, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 023901 (2013); http://dx.doi.org/10.1063/1.4773526 (4 pages)

Yoshihiro Gohda and Shinji Tsuneyuki
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Orders of magnitude enhancement of optical nonlinearity in subwavelength metal-nonlinear dielectric gratings

Daniel J. Ironside and Jung-Tsung Shen

Appl. Phys. Lett. 102, 021907 (2013); http://dx.doi.org/10.1063/1.4776697 (5 pages)

Online Publication Date: 16 January 2013

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We show that the optical properties of a metal-nonlinear dielectric grating can be precisely described by a uniform nonlinear dielectric slab. Based upon such a metamaterial mapping, we show that the effective optical nonlinearity in a metal-dielectric grating can be enhanced by orders of magnitude higher than that of the underlying nonlinear dielectric material, is broadband, and can be operated at a low quality-factor regime so as to have an extremely short intrinsic temporal response of a few picoseconds. Furthermore, we demonstrate extraordinary harmonic generation efficiency enhancement and large threshold-power reduction in bistability.
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42.79.Dj Gratings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Thermoelastic response of thin metal films and their adjacent materials

S. Kang, Y. Yoon, J. Kim, and W. Kim

Appl. Phys. Lett. 102, 021908 (2013); http://dx.doi.org/10.1063/1.4776701 (4 pages)

Online Publication Date: 16 January 2013

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A pulsed laser beam applied to a thin metal film is capable of launching an acoustic wave due to thermal expansion. Heat transfer from the thin metal film to adjacent materials can also induce thermal expansion; thus, the properties of these adjacent materials (as well as the thin metal film) should be considered for a complete description of the thermoelastic response. Here, we show that adjacent materials with a small specific heat and large thermal expansion coefficient can generate an enhanced acoustic wave and we demonstrate a three-fold increase in the peak pressure of the generated acoustic wave on substitution of parylene for polydimethylsiloxane.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
62.65.+k Acoustical properties of solids
65.40.Ba Heat capacity
65.40.De Thermal expansion; thermomechanical effects

On the residual stress and fracture strength of crystalline silicon wafers

Chris Yang, Frank Mess, Kevin Skenes, Shreyes Melkote, and Steven Danyluk

Appl. Phys. Lett. 102, 021909 (2013); http://dx.doi.org/10.1063/1.4776706 (5 pages)

Online Publication Date: 16 January 2013

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This letter reports on residual stress measurement in thin crystalline silicon wafers with a full-field near-infrared polariscope. Residual stress is analyzed in combination with observed surface defects, and the results are related to measured fracture strength variation in the wafers. Measurements indicate that there is a sawing process-related residual stress in the as-cut wafers, and that etch-removal of ∼5 μm from the wafer surface eliminates a damage layer that can significantly reduce the residual stress in the wafer, and therefore increases the observed fracture strength. There is a corresponding 2 to 3 μm reduction in the observed characteristic defect size after etching. Fracture strength anisotropy observed in the wafers is related to defect orientation (scratching grooves and microcracks) caused by the sawing process.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.65.Cf Surface cleaning, etching, patterning
62.20.mm Fracture
62.20.mt Cracks
81.05.Cy Elemental semiconductors
81.20.Wk Machining, milling

Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy

D. Dagnelund, Jan Stehr, A. Yu. Egorov, W. M. Chen, and I. A. Buyanova

Appl. Phys. Lett. 102, 021910 (2013); http://dx.doi.org/10.1063/1.4781459 (4 pages)

Online Publication Date: 17 January 2013

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Defect properties of quaternary GaNAsP/GaP epilayers grown by vapor phase epitaxy (VPE) are studied by photoluminescence and optically detected magnetic resonance techniques. Incorporation of more than 0.6% of nitrogen is found to facilitate formation of several paramagnetic defects which act as competing carrier recombination centers. One of the defects (labeled as Gai-D) is identified as a complex defect that has a Ga interstitial (Gai) atom residing inside a Ga tetrahedron as its core. A comparison of Gai-D with other Gai-related defects known in ternary GaNP and GaNAs alloys suggests that this defect configuration is specific to VPE-grown dilute nitrides.
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76.30.Mi Color centers and other defects
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.ag Semiconductors

Raman spectroscopic study of plasma-treated salmon DNA

Geon Joon Lee, Young-Wan Kwon, Yong Hee Kim, and Eun Ha Choi

Appl. Phys. Lett. 102, 021911 (2013); http://dx.doi.org/10.1063/1.4776673 (4 pages)

Online Publication Date: 17 January 2013

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In this research, we studied the effect of plasma treatment on the optical/structural properties of the deoxyribonucleic acid (DNA) extracted from salmon sperm. DNA-cetyltrimethylammonium (CTMA) films were obtained by complexation of DNA with CTMA. Circular dichroism (CD) and Raman spectra indicated that DNA retained its double helical structure in the solid film. The Raman spectra exhibited several vibration modes corresponding to the nuclear bases and the deoxyribose-phosphate backbones of the DNA, as well as the alkylchains of CTMA. Dielectric-barrier-discharge (DBD) plasma treatment induced structural modification and damage to the DNA, as observed by changes in the ultraviolet-visible absorption, CD, and Raman spectra. The optical emission spectra of the DBD plasma confirmed that DNA modification was induced by plasma ions such as reactive oxygen species and reactive nitrogen species.
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87.53.Ay Biophysical mechanisms of interaction
52.40.Hf Plasma-material interactions; boundary layer effects
78.20.Fm Birefringence
78.30.Jw Organic compounds, polymers
87.14.gk DNA
87.15.B- Structure of biomolecules

Polarization-dependent optical absorption of graphene under total internal reflection

Qing Ye, Jin Wang, Zhibo Liu, Zhi-Chao Deng, Xian-Tian Kong, Fei Xing, Xu-Dong Chen, Wen-Yuan Zhou, Chun-Ping Zhang, and Jian-Guo Tian

Appl. Phys. Lett. 102, 021912 (2013); http://dx.doi.org/10.1063/1.4776694 (4 pages)

Online Publication Date: 17 January 2013

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It is shown that graphene exhibits strong polarization-dependent optical absorption under total internal reflection. Compared with universal absorbance of 2.3%, larger absorption was observed in monolayer, bilayer, and few-layer graphenes for transverse electric (TE) wave under total internal reflection. Our result indicates that reflectance ratio of transverse magnetic wave to TE waves can easily provide the information of number of graphene layers. Furthermore, the enhanced light-graphene coupling in a wide spectral range will be great potential in many applications such as photodetector, photovoltaics, and optical sensor.
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78.67.Wj Optical properties of graphene
78.30.Na Fullerenes and related materials
78.40.Ri Fullerenes and related materials

On the correction of errors in some multiple particle tracking experiments

Christopher J. Rowlands and Peter T. C. So

Appl. Phys. Lett. 102, 021913 (2013); http://dx.doi.org/10.1063/1.4776738 (4 pages)

Online Publication Date: 17 January 2013

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A common source of error in particle tracking experiments is identified, and a theoretical model for the magnitude of the error is offered. In many cases, the error is small, but in systems where only a few particles are being tracked, the measured mean squared displacement can be up to 50% smaller than the actual value. The theoretical model predictions are confirmed using numerical simulations and experimental observations of polystyrene microspheres in water.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
06.20.Dk Measurement and error theory

Transparent and flexible amorphous In-Si-O films for flexible organic solar cells

Hye-Min Lee, Sin-Bi Kang, Kwun-Bum Chung, and Han-Ki Kim

Appl. Phys. Lett. 102, 021914 (2013); http://dx.doi.org/10.1063/1.4788687 (5 pages)

Online Publication Date: 18 January 2013

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We report on transparent amorphous In-Si-O (ISO) electrodes for flexible organic solar cells (FOSCs). Effective Si doping into the In2O3 matrix led to a completely amorphous ISO film as well as a low sheet resistance of 51.91 Ω/sq and a high near-infrared optical transmittance of 81.51% (550 nm), and which are desirable electrode characteristics for FOSCs. In addition, the ISO film showed outstanding flexibility in outer and inner bending tests due to the stable amorphous structure. Based on x-ray absorption spectroscopy and high resolution transmission microscope examinations, detailed microstructure and electronic structure of amorphous ISO film were investigated. Furthermore, FOSCs with an amorphous ISO anode showed an open circuit voltage (0.578 V), short circuit current (7.641 mA/cm2), fill factor (62.96%), and power conversion efficiency (2.78%), indicating that ISO is a promising flexible amorphous transparent electrode for FOSCs.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells

Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

Morito Akiyama, Keiichi Umeda, Atsushi Honda, and Toshimi Nagase

Appl. Phys. Lett. 102, 021915 (2013); http://dx.doi.org/10.1063/1.4788728 (4 pages)

Online Publication Date: 18 January 2013

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The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (ScxAl1−xN) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc0.41Al0.59N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc0.41Al0.59N film is higher than those of lead zirconate titanate and Pb(Mg1/3Nb2/3)O3-PbTiO3 films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc0.41Al0.59N film is due to the high d31 and the low relative permittivity.
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81.15.Cd Deposition by sputtering
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
77.55.H- Piezoelectric and electrostrictive films
77.22.Ch Permittivity (dielectric function)

Laser heating and detection of bilayer microcantilevers for non-contact thermodynamic measurements

Brian G. Burke and David A. LaVan

Appl. Phys. Lett. 102, 021916 (2013); http://dx.doi.org/10.1063/1.4776197 (3 pages)

Online Publication Date: 18 January 2013

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We describe a method for optical detection (frequency and position) and heating of bilayer microcantilevers (BMCs) to high temperatures at fast heating rates (106 °C/s to 109 °C/s) for non-contact thermodynamic measurements of small quantities of materials in the femtogram range. The current experimental apparatus with a 2 μm × 10 μm BMC achieves a deflection sensitivity of 0.1 Å, heating rate of 3.0 × 106 °C/s, and heat sensitivity of 18 pJ in a 3 kHz bandwidth in air. By measuring the resonant frequency shift after sample loading, we achieve a mass resolution of 2.67 fg.
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07.10.Cm Micromechanical devices and systems
07.20.Ka High-temperature instrumentation; pyrometers
42.62.-b Laser applications

Near resonant and nonresonant third-order optical nonlinearities of colloidal InP/ZnS quantum dots

Y. Wang, X. Yang, T. C. He, Y. Gao, H. V. Demir, X. W. Sun, and H. D. Sun

Appl. Phys. Lett. 102, 021917 (2013); http://dx.doi.org/10.1063/1.4776702 (4 pages)

Online Publication Date: 18 January 2013

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We have investigated the third-order optical nonlinearities of high-quality colloidal InP/ZnS core-shell quantum dots (QDs) using Z-scan technique with femtosecond pulses. The two-photon absorption cross-sections as high as 6.2 × 103 GM are observed at 800 nm (non-resonant regime) in InP/ZnS QDs with diameter of 2.8 nm, which is even larger than those of CdSe, CdS, and CdTe QDs at similar sizes. Furthermore, both of the 2.2 nm and 2.8 nm-sized InP/ZnS QDs exhibit strong saturable absorption in near resonant regime, which is attributed to large exciton Bohr radius in this material. These results strongly suggest the promising potential of InP/ZnS QDs for widespread applications, especially in two-photon excited bio-imaging and saturable absorbing.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
82.70.Dd Colloids
42.65.-k Nonlinear optics
71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors
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Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu

César J. Lockhart de la Rosa, Jie Sun (孙捷), Niclas Lindvall, Matthew T. Cole, Youngwoo Nam, Markus Löffler, Eva Olsson, Kenneth B. K. Teo (张谋瑾), and August Yurgens

Appl. Phys. Lett. 102, 022101 (2013); http://dx.doi.org/10.1063/1.4775583 (4 pages) | Cited 1 time

Online Publication Date: 15 January 2013

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An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling- and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient.
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82.45.Hk Electrolysis
68.55.A- Nucleation and growth
78.67.Wj Optical properties of graphene
61.41.+e Polymers, elastomers, and plastics
73.61.Wp Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Temperature dependence of the direct bandgap and transport properties of CdO

S. K. Vasheghani Farahani, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, C. F. McConville, and T. D. Veal

Appl. Phys. Lett. 102, 022102 (2013); http://dx.doi.org/10.1063/1.4775691 (4 pages) | Cited 3 times

Online Publication Date: 15 January 2013

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Temperature-dependent optical absorption, Hall effect, and infrared reflectance measurements have been performed on as-grown and post-growth annealed CdO films grown by metal organic vapor phase epitaxy on sapphire substrates. The evolution of the absorption edge and conduction electron plasmon energy with temperature has been modeled, including the effects arising from the Burstein-Moss shift and bandgap renormalization. The zero-temperature fundamental direct bandgap and band edge effective mass have been determined to be 2.31 ± 0.02 eV and 0.27±0.01m0, respectively. The associated Varshni parameters for the temperature dependence of the bandgap are found to be α = 8×10−4 eV/K and β = 260 K.
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73.61.Ga II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
78.66.Hf II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers

Kana Okubo, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, and Hiroshi Fujioka

Appl. Phys. Lett. 102, 022103 (2013); http://dx.doi.org/10.1063/1.4776210 (3 pages)

Online Publication Date: 16 January 2013

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An In-polar InN ultrathin film with high electron mobility was grown on an insulating yttria-stabilized zirconia (YSZ) (111) substrate via precise control of growth conditions for initial monolayers. It was found that the first several monolayers of InN on YSZ can be grown in a two-dimensional mode using extremely N-rich (ex-N-rich) conditions. Although the growth of more than several InN monolayers under these conditions results in rough surfaces, probably because of the suppressed migration of In atoms on the surface, the combination of ex-N-rich growth for the first few monolayers with subsequent conventional In-rich growth leads to the successful formation of InN films with smooth surfaces. The electron mobility of 11-nm-thick InN on YSZ with two-dimensionally grown initial layers was 170 cm2 V−1 s−1, which is much higher than the best reported value for InN ultrathin layers grown on GaN substrates. These results indicate that the structural quality of the InN/YSZ heterointerface and a smooth surface are inherently important for obtaining InN ultrathin films with good transport properties.
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81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Ey III-V semiconductors

Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

Michael E. Ramón, Tarik Akyol, Davood Shahrjerdi, Chadwin D. Young, Julian Cheng, Leonard F. Register, and Sanjay K. Banerjee

Appl. Phys. Lett. 102, 022104 (2013); http://dx.doi.org/10.1063/1.4776678 (5 pages)

Online Publication Date: 16 January 2013

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We report measurement of fast transient charging effects (FTCE) in enhancement-mode n-channel GaAs, InP, and In0.53Ga0.47As field-effect transistors (FETs) using Al2O3 as the gate dielectric. The FTCE data reveal superior drive current and enhanced threshold voltage stability for In0.53Ga0.47As FETs. We further report charge pumping measurements for In0.53Ga0.47As transistors, revealing that the majority of interface traps are donor traps, as well as an increased trap density within the Al2O3 bulk. Such data, together with FTCE data, reveal that drain current degradation observed during pulsed I-V measurements is predominantly due to slow oxide traps, underscoring their significance within III-V/high-κ metal-oxide-semiconductor FETs.
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85.30.Tv Field effect devices
85.40.Sz Deposition technology

Green luminescence and room temperature ferromagnetism in Cu doped ZnO

Zaheer Ahmed Khan, Abhishek Rai, Sudipta Roy Barman, and Subhasis Ghosh

Appl. Phys. Lett. 102, 022105 (2013); http://dx.doi.org/10.1063/1.4775359 (3 pages) | Cited 1 time

Online Publication Date: 17 January 2013

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We report room temperature ferromagnetism and its correlation with green luminescence band in Cu doped ZnO. Magnetic moment close to theoretical value has been obtained in high quality thin film achieved by optimizing different growth conditions. Rutherford back scattering and x-ray photoelectron spectroscopy were used to ascertain composition and the oxidation states of Cu inside the ZnO host. A correlation has been established between the Cu-induced green luminescence band and the magnetization in Cu doped ZnO.
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78.55.Et II-VI semiconductors
78.60.-b Other luminescence and radiative recombination
78.66.Hf II-VI semiconductors
75.30.Cr Saturation moments and magnetic susceptibilities
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

M. J. Davies, T. J. Badcock, P. Dawson, M. J. Kappers, R. A. Oliver, and C. J. Humphreys

Appl. Phys. Lett. 102, 022106 (2013); http://dx.doi.org/10.1063/1.4781398 (3 pages)

Online Publication Date: 18 January 2013

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We report on the optical properties of InGaN/GaN quantum well structures measured at 10 K as a function of excitation density. At high excitation power densities we observe a component in the spectra that decays more rapidly than the localised carrier emission observed for low excitation power densities. We attribute this component to recombination involving weakly localised or delocalised carriers. At the high excitation power densities there is a reduction in the recombination internal quantum efficiency, so called efficiency droop. These observations are compatible with the model whereby efficiency droop is explained in terms of the non radiative loss of delocalised carriers.
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81.05.Ea III-V semiconductors
81.07.St Quantum wells
73.63.Hs Quantum wells

Liquid-phase deposition of thin Si films by ballistic electro-reduction

T. Ohta, B. Gelloz, A. Kojima, and N. Koshida

Appl. Phys. Lett. 102, 022107 (2013); http://dx.doi.org/10.1063/1.4788678 (4 pages)

Online Publication Date: 18 January 2013

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It is shown that the nanocryatalline silicon ballistic electron emitter operates in a SiCl4 solution without using any counter electrodes and that thin amorphous Si films are efficiently deposited on the emitting surface with no contaminations and by-products. Despite the large electrochemical window of the SiCl4 solution, electrons injected with sufficiently high energies preferentially reduce Si4+ ions at the interface. Using an emitter with patterned line emission windows, a Si-wires array can be formed in parallel. This low-temperature liquid-phase deposition technique provides an alternative clean process for power-effective fabrication of advanced thin Si film structures and devices.
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81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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Influence of organic layer thickness on structure, magnetic, and transport properties of Langmuir-Blodgett ttb-CuPc/CoFe

T. Yu, Q. T. Zhang, D. P. Liu, and X. F. Han

Appl. Phys. Lett. 102, 022401 (2013); http://dx.doi.org/10.1063/1.4775590 (3 pages)

Online Publication Date: 14 January 2013

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In this letter, the ill-defined layer in organic/metal vertical structure was examined using ttb-CuPc/CoFe films. The ill-defined layer thickness was estimated. Beside the usually observed damages to organic underlayer, it is found that ill-defined layer may also influence film properties by modulating the growth of top metal layer. In our case, granular rather than continuous CoFe film was found as increasing ttb-CuPc underlayer thickness with a corresponding change in film's magnetic and transport properties.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
72.25.-b Spin polarized transport

Search for spin gapless semiconductors: The case of inverse Heusler compounds

S. Skaftouros, K. Özdoğan, E. Şaşıoğlu, and I. Galanakis

Appl. Phys. Lett. 102, 022402 (2013); http://dx.doi.org/10.1063/1.4775599 (4 pages) | Cited 3 times

Online Publication Date: 14 January 2013

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We employ ab-initio electronic structure calculations to search for spin gapless semiconductors among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover, these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.
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81.05.Hd Other semiconductors
71.15.-m Methods of electronic structure calculations
71.20.Nr Semiconductor compounds
72.25.-b Spin polarized transport
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Effect of magnetic order on nucleation in undercooled Co80Pd20 melts

Shengyin Zhou, Rui Hu, Jinshan Li, Hui Chang, Hongchao Kou, and Lian Zhou

Appl. Phys. Lett. 102, 022403 (2013); http://dx.doi.org/10.1063/1.4775676 (3 pages)

Online Publication Date: 14 January 2013

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Co80Pd20 melts have been undercooled below Curie temperature of the liquids (TCL) by employing the method of molten glass denucleation combined with cyclic superheating. The largest undercooling achieved is 465 K, which indicates that the nucleation temperature is below TCL more than 100 K and then the ferromagnetic liquid is obtained. The nucleation behavior is analyzed using the classical nucleation theory extended by magnetic contributions to the Gibbs free energy. The results reveal that the onset of magnetic order facilitates rather than stimulates nucleation. Consequently, Co80Pd20 melts can be undercooled below TCL.
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75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Cc Other ferromagnetic metals and alloys
75.50.Mm Magnetic liquids
75.50.Tt Fine-particle systems; nanocrystalline materials
64.60.Q- Nucleation
65.20.Jk Studies of thermodynamic properties of specific liquids

Half-metallic ferromagnetism in wurtzite ScM (M=C, Si, Ge, and Sn): Ab initio calculations

S. W. Fan, L. J. Ding, Z. L. Wang, and K. L. Yao

Appl. Phys. Lett. 102, 022404 (2013); http://dx.doi.org/10.1063/1.4775680 (5 pages)

Online Publication Date: 14 January 2013

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Using the full potential linearized augment plane wave method with the modified Becke and Johnson (mBJ) potential, the half-metallicity and electronic structure for the wurtzite ScM (M = C, Si, Ge, and Sn) compounds are investigated. The ScM series compounds are found to be excellent half-metallic ferromagnets (HMFs) with large half-metallic gaps (0.76–0.33 eV). The magnetic moments are 2.00 μB per cell, and p-d hybridization mechanism plays crucial role in forming the half-metallic ferromagnetism. The ferromagnetic ground states, larger half metallic gaps, the robust half-metallicity with respect to the lattice compression, negative cohesive energy, and heat of formation indicate ScM compounds would be promising HMFs.
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71.20.Nr Semiconductor compounds
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Pp Magnetic semiconductors
82.60.Cx Enthalpies of combustion, reaction, and formation
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
71.15.Nc Total energy and cohesive energy calculations

Landau-Lifshitz-Bloch-Slonczewski simulations of the spin-transfer-torque driven magnetization switching assisted by Joule heating

Eugen Oniciuc, Laurentiu Stoleriu, and Alexandru Stancu

Appl. Phys. Lett. 102, 022405 (2013); http://dx.doi.org/10.1063/1.4775682 (4 pages)

Online Publication Date: 14 January 2013

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In this paper, we show that Landau-Lifshitz-Bloch-Slonczewski equation can be envisaged as one of the best options for the modeling of heat assisted spin transfer torque writing. The model is tested on a Joule assisted switching problem for a macrospin under a polarized current, with all the values for the parameters in the typical range used technologically. The switching diagram in the presence of the current is presented, explained, and the agreement with published experimental data is discussed.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Spin pumping by nonreciprocal spin waves under local excitation

R. Iguchi, K. Ando, Z. Qiu, T. An, E. Saitoh, and T. Sato

Appl. Phys. Lett. 102, 022406 (2013); http://dx.doi.org/10.1063/1.4775685 (3 pages)

Online Publication Date: 14 January 2013

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We measured spatial distribution of spin pumping by nonreciprocal magnetostatic surface waves (MSSWs) using inverse spin Hall effect (ISHE) in a YIG/Pt system under local excitation. The local intensity of spin pumping by MSSWs shows center displacement of ± 0.1 mm from the center of a waveguide according to the reversal of a bias field, which is due to the nonreciprocal propagation of MSSWs over a macroscopic distance. The combination of spin pumping and ISHE enables electrical investigation of local spin dynamics in a magnetic insulator.
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75.30.Ds Spin waves
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Rf Surface magnetism
72.25.-b Spin polarized transport

Damping of CoxFe80−xB20 ultrathin films with perpendicular magnetic anisotropy

T. Devolder, P.-H. Ducrot, J.-P. Adam, I. Barisic, N. Vernier, Joo-Von Kim, B. Ockert, and D. Ravelosona

Appl. Phys. Lett. 102, 022407 (2013); http://dx.doi.org/10.1063/1.4775684 (4 pages) | Cited 1 time

Online Publication Date: 15 January 2013

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We use vector network analyzer ferromagnetic resonance to study the perpendicularly magnetized CoFeB films. We report the dependence of the anisotropy, the g-factor, and the damping upon the Fe-Co compositional ratio in the amorphous and crystalline states. The damping and the anisotropy increase upon crystallization but vary little with composition on the Fe-rich side. At high cobalt content, the anisotropy lowers while the damping and the sample inhomogeneity increase. The compositional dependences seem to extrapolate from the properties of bulk CoFe alloys, with differences that can be understood from the correlated impacts of spin-orbit interaction on anisotropy, g-factor, and damping.
Show PACS
75.70.Ak Magnetic properties of monolayers and thin films
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.70.Tj Spin-orbit effects
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
75.30.Gw Magnetic anisotropy
75.50.Bb Fe and its alloys
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