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14 Jan 2013

Volume 102, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 102, 023901 (2013); http://dx.doi.org/10.1063/1.4773526 (4 pages)

Yoshihiro Gohda and Shinji Tsuneyuki
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Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu

César J. Lockhart de la Rosa, Jie Sun (孙捷), Niclas Lindvall, Matthew T. Cole, Youngwoo Nam, Markus Löffler, Eva Olsson, Kenneth B. K. Teo (张谋瑾), and August Yurgens

Appl. Phys. Lett. 102, 022101 (2013); http://dx.doi.org/10.1063/1.4775583 (4 pages) | Cited 1 time

Online Publication Date: 15 January 2013

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An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling- and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient.
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82.45.Hk Electrolysis
68.55.A- Nucleation and growth
78.67.Wj Optical properties of graphene
61.41.+e Polymers, elastomers, and plastics
73.61.Wp Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Temperature dependence of the direct bandgap and transport properties of CdO

S. K. Vasheghani Farahani, V. Muñoz-Sanjosé, J. Zúñiga-Pérez, C. F. McConville, and T. D. Veal

Appl. Phys. Lett. 102, 022102 (2013); http://dx.doi.org/10.1063/1.4775691 (4 pages) | Cited 2 times

Online Publication Date: 15 January 2013

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Temperature-dependent optical absorption, Hall effect, and infrared reflectance measurements have been performed on as-grown and post-growth annealed CdO films grown by metal organic vapor phase epitaxy on sapphire substrates. The evolution of the absorption edge and conduction electron plasmon energy with temperature has been modeled, including the effects arising from the Burstein-Moss shift and bandgap renormalization. The zero-temperature fundamental direct bandgap and band edge effective mass have been determined to be 2.31 ± 0.02 eV and 0.27±0.01m0, respectively. The associated Varshni parameters for the temperature dependence of the bandgap are found to be α = 8×10−4 eV/K and β = 260 K.
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73.61.Ga II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
78.66.Hf II-VI semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers

Kana Okubo, Atsushi Kobayashi, Jitsuo Ohta, Masaharu Oshima, and Hiroshi Fujioka

Appl. Phys. Lett. 102, 022103 (2013); http://dx.doi.org/10.1063/1.4776210 (3 pages)

Online Publication Date: 16 January 2013

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An In-polar InN ultrathin film with high electron mobility was grown on an insulating yttria-stabilized zirconia (YSZ) (111) substrate via precise control of growth conditions for initial monolayers. It was found that the first several monolayers of InN on YSZ can be grown in a two-dimensional mode using extremely N-rich (ex-N-rich) conditions. Although the growth of more than several InN monolayers under these conditions results in rough surfaces, probably because of the suppressed migration of In atoms on the surface, the combination of ex-N-rich growth for the first few monolayers with subsequent conventional In-rich growth leads to the successful formation of InN films with smooth surfaces. The electron mobility of 11-nm-thick InN on YSZ with two-dimensionally grown initial layers was 170 cm2 V−1 s−1, which is much higher than the best reported value for InN ultrathin layers grown on GaN substrates. These results indicate that the structural quality of the InN/YSZ heterointerface and a smooth surface are inherently important for obtaining InN ultrathin films with good transport properties.
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81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.Ey III-V semiconductors

Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric

Michael E. Ramón, Tarik Akyol, Davood Shahrjerdi, Chadwin D. Young, Julian Cheng, Leonard F. Register, and Sanjay K. Banerjee

Appl. Phys. Lett. 102, 022104 (2013); http://dx.doi.org/10.1063/1.4776678 (5 pages)

Online Publication Date: 16 January 2013

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We report measurement of fast transient charging effects (FTCE) in enhancement-mode n-channel GaAs, InP, and In0.53Ga0.47As field-effect transistors (FETs) using Al2O3 as the gate dielectric. The FTCE data reveal superior drive current and enhanced threshold voltage stability for In0.53Ga0.47As FETs. We further report charge pumping measurements for In0.53Ga0.47As transistors, revealing that the majority of interface traps are donor traps, as well as an increased trap density within the Al2O3 bulk. Such data, together with FTCE data, reveal that drain current degradation observed during pulsed I-V measurements is predominantly due to slow oxide traps, underscoring their significance within III-V/high-κ metal-oxide-semiconductor FETs.
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85.30.Tv Field effect devices
85.40.Sz Deposition technology

Green luminescence and room temperature ferromagnetism in Cu doped ZnO

Zaheer Ahmed Khan, Abhishek Rai, Sudipta Roy Barman, and Subhasis Ghosh

Appl. Phys. Lett. 102, 022105 (2013); http://dx.doi.org/10.1063/1.4775359 (3 pages) | Cited 1 time

Online Publication Date: 17 January 2013

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We report room temperature ferromagnetism and its correlation with green luminescence band in Cu doped ZnO. Magnetic moment close to theoretical value has been obtained in high quality thin film achieved by optimizing different growth conditions. Rutherford back scattering and x-ray photoelectron spectroscopy were used to ascertain composition and the oxidation states of Cu inside the ZnO host. A correlation has been established between the Cu-induced green luminescence band and the magnetization in Cu doped ZnO.
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78.55.Et II-VI semiconductors
78.60.-b Other luminescence and radiative recombination
78.66.Hf II-VI semiconductors
75.30.Cr Saturation moments and magnetic susceptibilities
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

M. J. Davies, T. J. Badcock, P. Dawson, M. J. Kappers, R. A. Oliver, and C. J. Humphreys

Appl. Phys. Lett. 102, 022106 (2013); http://dx.doi.org/10.1063/1.4781398 (3 pages)

Online Publication Date: 18 January 2013

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We report on the optical properties of InGaN/GaN quantum well structures measured at 10 K as a function of excitation density. At high excitation power densities we observe a component in the spectra that decays more rapidly than the localised carrier emission observed for low excitation power densities. We attribute this component to recombination involving weakly localised or delocalised carriers. At the high excitation power densities there is a reduction in the recombination internal quantum efficiency, so called efficiency droop. These observations are compatible with the model whereby efficiency droop is explained in terms of the non radiative loss of delocalised carriers.
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81.05.Ea III-V semiconductors
81.07.St Quantum wells
73.63.Hs Quantum wells

Liquid-phase deposition of thin Si films by ballistic electro-reduction

T. Ohta, B. Gelloz, A. Kojima, and N. Koshida

Appl. Phys. Lett. 102, 022107 (2013); http://dx.doi.org/10.1063/1.4788678 (4 pages)

Online Publication Date: 18 January 2013

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It is shown that the nanocryatalline silicon ballistic electron emitter operates in a SiCl4 solution without using any counter electrodes and that thin amorphous Si films are efficiently deposited on the emitting surface with no contaminations and by-products. Despite the large electrochemical window of the SiCl4 solution, electrons injected with sufficiently high energies preferentially reduce Si4+ ions at the interface. Using an emitter with patterned line emission windows, a Si-wires array can be formed in parallel. This low-temperature liquid-phase deposition technique provides an alternative clean process for power-effective fabrication of advanced thin Si film structures and devices.
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81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
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