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14 Jan 2013

Volume 102, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 102, 023901 (2013); http://dx.doi.org/10.1063/1.4773526 (4 pages)

Yoshihiro Gohda and Shinji Tsuneyuki
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Structural and mechanical stability of dilute yttrium doped chromium

Jialin Lei, Bin Chen, Shengmin Guo, Kaiyang Wang, Liuxi Tan, Ebrahim Khosravi, Jinyuan Yan, Selva Vennila Raju, and Shizhong Yang

Appl. Phys. Lett. 102, 021901 (2013); http://dx.doi.org/10.1063/1.4775596 (4 pages)

Online Publication Date: 14 January 2013

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Rare earth element doping of chromium is much desired for various applications, but is technically difficult because of dopant segregation. Using a room temperature mechanical alloying method, dilute yttrium doping into nanosized chromium was achieved. Synchrotron-based high-pressure X-ray diffraction indicated that the Cr-Y alloy (Cr0.97Y0.03) was stable at up to 39 GPa, and the bulk modulus was 203 ± 2.6 GPa. The experimental results were consistent with first-principles density functional theory simulation. The diffraction line broadening profiles indicated the deformation anisotropy of the nanoalloy. This study suggests that Cr0.97Y0.03 alloy is promising for ultrahigh stress applications such as airplane engines and land-based turbines.
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81.40.Lm Deformation, plasticity, and creep
62.20.de Elastic moduli
62.20.F- Deformation and plasticity
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.40.Jj Elasticity and anelasticity, stress-strain relations

12% magnetic field-induced strain in Ni-Mn-Ga-based non-modulated martensite

A. Sozinov, N. Lanska, A. Soroka, and W. Zou

Appl. Phys. Lett. 102, 021902 (2013); http://dx.doi.org/10.1063/1.4775677 (5 pages) | Cited 1 time

Online Publication Date: 14 January 2013

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Magnetic field-induced strain (MFIS) of 12% is reported in ferromagnetic Ni46Mn24Ga22Co4Cu4 martensite exhibiting non-modulated (NM) tetragonal crystal structure with lattice parameter ratio c/a>1. The strain was measured at ambient temperature in a magnetic field of the order of 1 T. The twinning stress σTW and the magnetic stress σMAG were also measured and the condition for a giant MFIS observation σTW<σMAG was confirmed. The MFIS was achieved in NM Ni46Mn24Ga22Co4Cu4 martensite by considerable lowering of the σTW value as compared to the values for NM martensites in ternary Ni-Mn-Ga system.
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61.66.Dk Alloys
61.72.Mm Grain and twin boundaries
75.50.Cc Other ferromagnetic metals and alloys

Monolayer graphene oxide as a building block for artificial muscles

Geoffrey W. Rogers and Jefferson Z. Liu

Appl. Phys. Lett. 102, 021903 (2013); http://dx.doi.org/10.1063/1.4775597 (4 pages)

Online Publication Date: 15 January 2013

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The electromechanical actuation of a highly ordered compound of graphene oxide (GO) is shown via ab initio simulations to produce high-performance quantum-mechanical responses, which mimic the behaviour of mammalian skeletal muscle. In addition to large expansive strains (∼10%), this GO compound (asymmetrically unzipped C4O) exhibits large contractive strains of −4.8% upon −0.15 e/C-atom electron injection. Furthermore, as these contractive strains are coupled with equally high stresses (∼100 GPa) and short response times ( ∼ 1 ns), we show that this GO material meets all of the functional requirements of an artificial muscle building block.
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82.45.Mp Thin layers, films, monolayers, membranes
87.19.Ff Muscles
61.48.Gh Structure of graphene
81.05.ue Graphene
71.15.-m Methods of electronic structure calculations
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Fabrication of stereo metallic resonant structures with polymer droplets as template

Xiao-Chun Chen, Yuan-Wei Wu, Yu-Hui Hu, Hong-Min Li, Ru-Wen Peng, Xi-Ping Hao, and Mu Wang

Appl. Phys. Lett. 102, 021904 (2013); http://dx.doi.org/10.1063/1.4775765 (4 pages)

Online Publication Date: 15 January 2013

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Using polymer droplets formed in dewetting of polymer film on silicon surface as template, the silicon columns capped with circular polymer plates are fabricated via plasma etching. By blanket deposition of a gold layer on the structure, an array of metallic microcavities featured by a metal circular plate separated by a silicon column with the bottom metallic film is achieved. The geometrical parameters of the stereo structures can be tuned. We show that the electric field at the edge of the cap is greatly enhanced, which can be used as the hot spot for trace amount of chemical detection.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.66.Bz Metals and metallic alloys
81.65.Cf Surface cleaning, etching, patterning
68.55.-a Thin film structure and morphology
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate

Arnaud Stolz, Suk-Min Ko, Gilles Patriarche, Elhadj Dogheche, Yong-Hoon Cho, and Didier Decoster

Appl. Phys. Lett. 102, 021905 (2013); http://dx.doi.org/10.1063/1.4776671 (3 pages) | Cited 1 time

Online Publication Date: 16 January 2013

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We report here the experimental results on a field effect refractive index change into gallium nitride (GaN) structures. This effect is characterized through the common prism-coupling technique with the application of a vertical direct-current electric field. Surface plasmon propagation was used to increase the sensitivity of the electro-optic measurements. We have obtained a large refractive index variation for GaN epilayer, around 1.4×10−2 at 1.55μm wavelength. In order to understand the origin of the index modulation, we have conducted a scanning transmission electron microscopy analysis and discussed the influence of threading dislocations density acting as traps and thermo-optic effect. According to recent works, we observed experimentally the optical response of a non-linear electro-optic effect on GaN on Si(111) substrate and estimated a Kerr coefficient of about 2.14×10−16m2V−2.
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78.20.nd Thermophotonic effects
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Nonlocal electro-optic effects for transverse electric modes in quantum well Mach-Zehnder modulators

Guanghui Wang and Ruiqiang Wang

Appl. Phys. Lett. 102, 021906 (2013); http://dx.doi.org/10.1063/1.4776688 (3 pages)

Online Publication Date: 16 January 2013

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We develop a microscopic nonlocal theory for the electro-optic effect (Pockels effect) and report its effective electrorefractive modulation for transverse electric (TE) waves in a quantum well (QW) waveguide Mach-Zehnder modulator. A general expression for the dielectric function with spatial dispersion for TE modes is derived. Furthermore, it is desirable that a low absorption loss (α<9.0 cm−1) and a large refractive index change (Δn ∼ 0.00137) are obtained by an optimal bias electric field and QW width. These properties may have extensive applications in the field of optoelectronics.
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78.20.Jq Electro-optical effects

Orders of magnitude enhancement of optical nonlinearity in subwavelength metal-nonlinear dielectric gratings

Daniel J. Ironside and Jung-Tsung Shen

Appl. Phys. Lett. 102, 021907 (2013); http://dx.doi.org/10.1063/1.4776697 (5 pages)

Online Publication Date: 16 January 2013

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We show that the optical properties of a metal-nonlinear dielectric grating can be precisely described by a uniform nonlinear dielectric slab. Based upon such a metamaterial mapping, we show that the effective optical nonlinearity in a metal-dielectric grating can be enhanced by orders of magnitude higher than that of the underlying nonlinear dielectric material, is broadband, and can be operated at a low quality-factor regime so as to have an extremely short intrinsic temporal response of a few picoseconds. Furthermore, we demonstrate extraordinary harmonic generation efficiency enhancement and large threshold-power reduction in bistability.
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42.79.Dj Gratings
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Thermoelastic response of thin metal films and their adjacent materials

S. Kang, Y. Yoon, J. Kim, and W. Kim

Appl. Phys. Lett. 102, 021908 (2013); http://dx.doi.org/10.1063/1.4776701 (4 pages)

Online Publication Date: 16 January 2013

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A pulsed laser beam applied to a thin metal film is capable of launching an acoustic wave due to thermal expansion. Heat transfer from the thin metal film to adjacent materials can also induce thermal expansion; thus, the properties of these adjacent materials (as well as the thin metal film) should be considered for a complete description of the thermoelastic response. Here, we show that adjacent materials with a small specific heat and large thermal expansion coefficient can generate an enhanced acoustic wave and we demonstrate a three-fold increase in the peak pressure of the generated acoustic wave on substitution of parylene for polydimethylsiloxane.
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81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
62.65.+k Acoustical properties of solids
65.40.Ba Heat capacity
65.40.De Thermal expansion; thermomechanical effects

On the residual stress and fracture strength of crystalline silicon wafers

Chris Yang, Frank Mess, Kevin Skenes, Shreyes Melkote, and Steven Danyluk

Appl. Phys. Lett. 102, 021909 (2013); http://dx.doi.org/10.1063/1.4776706 (5 pages)

Online Publication Date: 16 January 2013

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This letter reports on residual stress measurement in thin crystalline silicon wafers with a full-field near-infrared polariscope. Residual stress is analyzed in combination with observed surface defects, and the results are related to measured fracture strength variation in the wafers. Measurements indicate that there is a sawing process-related residual stress in the as-cut wafers, and that etch-removal of ∼5 μm from the wafer surface eliminates a damage layer that can significantly reduce the residual stress in the wafer, and therefore increases the observed fracture strength. There is a corresponding 2 to 3 μm reduction in the observed characteristic defect size after etching. Fracture strength anisotropy observed in the wafers is related to defect orientation (scratching grooves and microcracks) caused by the sawing process.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.65.Cf Surface cleaning, etching, patterning
62.20.mm Fracture
62.20.mt Cracks
81.05.Cy Elemental semiconductors
81.20.Wk Machining, milling

Optically detected magnetic resonance studies of point defects in quaternary GaNAsP epilayers grown by vapor phase epitaxy

D. Dagnelund, Jan Stehr, A. Yu. Egorov, W. M. Chen, and I. A. Buyanova

Appl. Phys. Lett. 102, 021910 (2013); http://dx.doi.org/10.1063/1.4781459 (4 pages)

Online Publication Date: 17 January 2013

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Defect properties of quaternary GaNAsP/GaP epilayers grown by vapor phase epitaxy (VPE) are studied by photoluminescence and optically detected magnetic resonance techniques. Incorporation of more than 0.6% of nitrogen is found to facilitate formation of several paramagnetic defects which act as competing carrier recombination centers. One of the defects (labeled as Gai-D) is identified as a complex defect that has a Ga interstitial (Gai) atom residing inside a Ga tetrahedron as its core. A comparison of Gai-D with other Gai-related defects known in ternary GaNP and GaNAs alloys suggests that this defect configuration is specific to VPE-grown dilute nitrides.
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76.30.Mi Color centers and other defects
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.ag Semiconductors

Raman spectroscopic study of plasma-treated salmon DNA

Geon Joon Lee, Young-Wan Kwon, Yong Hee Kim, and Eun Ha Choi

Appl. Phys. Lett. 102, 021911 (2013); http://dx.doi.org/10.1063/1.4776673 (4 pages)

Online Publication Date: 17 January 2013

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In this research, we studied the effect of plasma treatment on the optical/structural properties of the deoxyribonucleic acid (DNA) extracted from salmon sperm. DNA-cetyltrimethylammonium (CTMA) films were obtained by complexation of DNA with CTMA. Circular dichroism (CD) and Raman spectra indicated that DNA retained its double helical structure in the solid film. The Raman spectra exhibited several vibration modes corresponding to the nuclear bases and the deoxyribose-phosphate backbones of the DNA, as well as the alkylchains of CTMA. Dielectric-barrier-discharge (DBD) plasma treatment induced structural modification and damage to the DNA, as observed by changes in the ultraviolet-visible absorption, CD, and Raman spectra. The optical emission spectra of the DBD plasma confirmed that DNA modification was induced by plasma ions such as reactive oxygen species and reactive nitrogen species.
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87.53.Ay Biophysical mechanisms of interaction
52.40.Hf Plasma-material interactions; boundary layer effects
78.20.Fm Birefringence
78.30.Jw Organic compounds, polymers
87.14.gk DNA
87.15.B- Structure of biomolecules

Polarization-dependent optical absorption of graphene under total internal reflection

Qing Ye, Jin Wang, Zhibo Liu, Zhi-Chao Deng, Xian-Tian Kong, Fei Xing, Xu-Dong Chen, Wen-Yuan Zhou, Chun-Ping Zhang, and Jian-Guo Tian

Appl. Phys. Lett. 102, 021912 (2013); http://dx.doi.org/10.1063/1.4776694 (4 pages)

Online Publication Date: 17 January 2013

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It is shown that graphene exhibits strong polarization-dependent optical absorption under total internal reflection. Compared with universal absorbance of 2.3%, larger absorption was observed in monolayer, bilayer, and few-layer graphenes for transverse electric (TE) wave under total internal reflection. Our result indicates that reflectance ratio of transverse magnetic wave to TE waves can easily provide the information of number of graphene layers. Furthermore, the enhanced light-graphene coupling in a wide spectral range will be great potential in many applications such as photodetector, photovoltaics, and optical sensor.
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78.67.Wj Optical properties of graphene
78.30.Na Fullerenes and related materials
78.40.Ri Fullerenes and related materials

On the correction of errors in some multiple particle tracking experiments

Christopher J. Rowlands and Peter T. C. So

Appl. Phys. Lett. 102, 021913 (2013); http://dx.doi.org/10.1063/1.4776738 (4 pages)

Online Publication Date: 17 January 2013

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A common source of error in particle tracking experiments is identified, and a theoretical model for the magnitude of the error is offered. In many cases, the error is small, but in systems where only a few particles are being tracked, the measured mean squared displacement can be up to 50% smaller than the actual value. The theoretical model predictions are confirmed using numerical simulations and experimental observations of polystyrene microspheres in water.
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06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
06.20.Dk Measurement and error theory

Transparent and flexible amorphous In-Si-O films for flexible organic solar cells

Hye-Min Lee, Sin-Bi Kang, Kwun-Bum Chung, and Han-Ki Kim

Appl. Phys. Lett. 102, 021914 (2013); http://dx.doi.org/10.1063/1.4788687 (5 pages)

Online Publication Date: 18 January 2013

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We report on transparent amorphous In-Si-O (ISO) electrodes for flexible organic solar cells (FOSCs). Effective Si doping into the In2O3 matrix led to a completely amorphous ISO film as well as a low sheet resistance of 51.91 Ω/sq and a high near-infrared optical transmittance of 81.51% (550 nm), and which are desirable electrode characteristics for FOSCs. In addition, the ISO film showed outstanding flexibility in outer and inner bending tests due to the stable amorphous structure. Based on x-ray absorption spectroscopy and high resolution transmission microscope examinations, detailed microstructure and electronic structure of amorphous ISO film were investigated. Furthermore, FOSCs with an amorphous ISO anode showed an open circuit voltage (0.578 V), short circuit current (7.641 mA/cm2), fill factor (62.96%), and power conversion efficiency (2.78%), indicating that ISO is a promising flexible amorphous transparent electrode for FOSCs.
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88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells

Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

Morito Akiyama, Keiichi Umeda, Atsushi Honda, and Toshimi Nagase

Appl. Phys. Lett. 102, 021915 (2013); http://dx.doi.org/10.1063/1.4788728 (4 pages)

Online Publication Date: 18 January 2013

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The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (ScxAl1−xN) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc0.41Al0.59N film was 67 GPa, indicating that the FOM is five times larger than that of AlN. The FOM of Sc0.41Al0.59N film is higher than those of lead zirconate titanate and Pb(Mg1/3Nb2/3)O3-PbTiO3 films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc0.41Al0.59N film is due to the high d31 and the low relative permittivity.
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81.15.Cd Deposition by sputtering
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
77.55.H- Piezoelectric and electrostrictive films
77.22.Ch Permittivity (dielectric function)

Laser heating and detection of bilayer microcantilevers for non-contact thermodynamic measurements

Brian G. Burke and David A. LaVan

Appl. Phys. Lett. 102, 021916 (2013); http://dx.doi.org/10.1063/1.4776197 (3 pages)

Online Publication Date: 18 January 2013

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We describe a method for optical detection (frequency and position) and heating of bilayer microcantilevers (BMCs) to high temperatures at fast heating rates (106 °C/s to 109 °C/s) for non-contact thermodynamic measurements of small quantities of materials in the femtogram range. The current experimental apparatus with a 2 μm × 10 μm BMC achieves a deflection sensitivity of 0.1 Å, heating rate of 3.0 × 106 °C/s, and heat sensitivity of 18 pJ in a 3 kHz bandwidth in air. By measuring the resonant frequency shift after sample loading, we achieve a mass resolution of 2.67 fg.
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07.10.Cm Micromechanical devices and systems
07.20.Ka High-temperature instrumentation; pyrometers
42.62.-b Laser applications

Near resonant and nonresonant third-order optical nonlinearities of colloidal InP/ZnS quantum dots

Y. Wang, X. Yang, T. C. He, Y. Gao, H. V. Demir, X. W. Sun, and H. D. Sun

Appl. Phys. Lett. 102, 021917 (2013); http://dx.doi.org/10.1063/1.4776702 (4 pages)

Online Publication Date: 18 January 2013

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We have investigated the third-order optical nonlinearities of high-quality colloidal InP/ZnS core-shell quantum dots (QDs) using Z-scan technique with femtosecond pulses. The two-photon absorption cross-sections as high as 6.2 × 103 GM are observed at 800 nm (non-resonant regime) in InP/ZnS QDs with diameter of 2.8 nm, which is even larger than those of CdSe, CdS, and CdTe QDs at similar sizes. Furthermore, both of the 2.2 nm and 2.8 nm-sized InP/ZnS QDs exhibit strong saturable absorption in near resonant regime, which is attributed to large exciton Bohr radius in this material. These results strongly suggest the promising potential of InP/ZnS QDs for widespread applications, especially in two-photon excited bio-imaging and saturable absorbing.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
82.70.Dd Colloids
42.65.-k Nonlinear optics
71.35.-y Excitons and related phenomena
78.40.Fy Semiconductors
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