APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

14 Jan 2013

Volume 102, Issue 2, Articles (02xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 023901 (2013); http://dx.doi.org/10.1063/1.4773526 (4 pages)

Yoshihiro Gohda and Shinji Tsuneyuki
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

From circular to triangular alumina nanopore arrays via simple replication

Guiduk Yu and Kyusoon Shin

Appl. Phys. Lett. 102, 021601 (2013); http://dx.doi.org/10.1063/1.4775667 (4 pages)

Online Publication Date: 14 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We found inverse-hexagonal packing pattern from self-assembled anodic aluminum oxide and exploited the pattern to obtain triangular pore array. By replicating the curved interface between aluminum and porous alumina, we fabricated a pattern with the opposite packing structure as well as the inversed pattern curvature. Anodization from the replicated structure formed triangular pores in inverse-hexagonal packing, whereas that from the original pattern produces circular pores in hexagonal packing. Our finding highlights the importance of the curvature as well as packing structure of pre-patterns in pore formation and achievement in the control via a simple replication process.
Show PACS
81.16.Rf Micro- and nanoscale pattern formation
61.43.Gt Powders, porous materials
61.46.Bc Structure of clusters (e.g., metcars; not fragments of crystals; free or loosely aggregated or loosely attached to a substrate)
81.16.Dn Self-assembly

Controlling interfacial states in amorphous/crystalline LaAlO3/SrTiO3 heterostructures by electric fields

D. V. Christensen, F. Trier, Y. Z. Chen, A. Smith, J. Nygård, and N. Pryds

Appl. Phys. Lett. 102, 021602 (2013); http://dx.doi.org/10.1063/1.4775669 (4 pages) | Cited 1 time

Online Publication Date: 14 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The tunable metal-insulator transition in crystalline LaAlO3/SrTiO3 heterostructures constitutes a central element in the range of remarkable interface properties that has made this oxide system subject to extensive research. Recently, metallic interfaces have also been realized when depositing amorphous LaAlO3 films on SrTiO3. Here, we present a non-volatile and reversible tuning of the interface conductivity by more than 3 orders of magnitude at room temperature by applying an electric field to such amorphous/crystalline heterostructures with amorphous LaAlO3 film thicknesses of ∼2 nm. We show that the tunability is strongly temperature dependent, and demonstrate a simple protocol for enhancing the tunability.
Show PACS
73.61.Ng Insulators
68.35.Ct Interface structure and roughness
71.30.+h Metal-insulator transitions and other electronic transitions

Formation and development of dislocation in graphene

Gun-Do Lee, Euijoon Yoon, Nong-Moon Hwang, Cai-Zhuang Wang, and Kai-Ming Ho

Appl. Phys. Lett. 102, 021603 (2013); http://dx.doi.org/10.1063/1.4775671 (4 pages)

Online Publication Date: 16 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The formation and development processes of dislocation in graphene are investigated by performing tight-binding molecular dynamics (TBMD) simulation and ab initio total energy calculation. It is found that the coalescence of pentagon-heptagon (5-7) pairs with vacancy defects induces the formation of dislocation due to the separation of two 5-7 pairs. In TBMD simulations, adatoms are ejected and evaporated from graphene surface so that the dislocation is developed. It is observed that diffusing carbon atoms nearby dangling bonds help non-hexagonal rings change into stable hexagonal rings. These results might give some ideas for the control of structural properties by inducing defect structures.
Show PACS
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.jd Vacancies
71.55.Ht Other nonmetals
66.30.Lw Diffusion of other defects

Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching

Sindhuja Sridharan, Navakanta Bhat, and K. N. Bhat

Appl. Phys. Lett. 102, 021604 (2013); http://dx.doi.org/10.1063/1.4776733 (4 pages)

Online Publication Date: 16 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A two step silicon surface texturing, consisting of potassium hydroxide (KOH) etching followed by tetra-methyl ammonium hydroxide etching is presented. This combined texturing results in 13.8% reflectivity at 600 nm compared to 16.1% reflectivity for KOH etching due to the modification of microstructure of etched pyramids. This combined etching also results in significantly lower flat-band voltage (VFB) (−0.19 V compared to −1.3 V) and interface trap density (Dit) (2.13 × 1012 cm−2 eV−1 compared to 3.2 × 1012 cm−2 eV−1).
Show PACS
68.35.bg Semiconductors
68.47.Fg Semiconductor surfaces
81.65.Cf Surface cleaning, etching, patterning

Molecular organization in organic semiconductor thin films observed in real time

D. A. Evans, O. R. Roberts, A. R. Vearey-Roberts, G. T. Williams, A. C. Brieva, and D. P. Langstaff

Appl. Phys. Lett. 102, 021605 (2013); http://dx.doi.org/10.1063/1.4775762 (5 pages)

Online Publication Date: 17 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Post-deposition molecular rearrangement in thin organic films is revealed by in situ real-time photoelectron spectroscopy during organic molecular beam deposition. Agreement between real time spectroscopy and Monte Carlo modeling confirms the role of nearest-neighbor molecular attraction in driving a time-dependent morphology for oriented films of tin phthalocyanine (SnPc) on a range of substrates. The time-dependent molecular self-organization occurs over timescales comparable to the growth rates and is therefore an important factor in the degradation of thin films of organic semiconductors typically considered for the fabrication of multilayer semiconductor devices.
Show PACS
68.55.ag Semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces

An in situ x-ray photoelectron spectroscopy study of the initial stages of rf magnetron sputter deposition of indium tin oxide on p-type Si substrate

M. H. Rein, M. V. Hohmann, A. Thøgersen, J. Mayandi, A. O. Holt, A. Klein, and E. V. Monakhov

Appl. Phys. Lett. 102, 021606 (2013); http://dx.doi.org/10.1063/1.4774404 (4 pages)

Online Publication Date: 17 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The interface between indium tin oxide and p-type silicon is studied by in situ X-ray photoelectron spectroscopy (XPS). This is done by performing XPS without breaking vacuum after deposition of ultrathin layers in sequences. Elemental tin and indium are shown to be present at the interface, both after 2 and 10 s of deposition. In addition, the silicon oxide layer at the interface is shown to be composed of mainly silicon suboxides rather than silicon dioxide.
Show PACS
68.55.ag Semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.15.Cd Deposition by sputtering
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Effect of polarity on Ni/InN interfacial reactions

K. C. Kragh-Buetow, X. Weng, E. D. Readinger, M. Wraback, and S. E. Mohney

Appl. Phys. Lett. 102, 021607 (2013); http://dx.doi.org/10.1063/1.4781768 (4 pages)

Online Publication Date: 18 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ni films on (0001) and (000math) InN exhibited different reaction kinetics upon annealing at 673K. Structural and chemical analysis using grazing incidence X-ray diffraction, transmission electron microscopy, and X-ray energy dispersive spectrometry indicated that an interfacial reaction did not occur between the Ni film and the In-polar (0001) InN layer. However, the N-polar face reacted with Ni to form the Ni3InNx ternary phase with an anti-perovskite structure. The difference in reactivity for Ni on In-face and N-face InN indicates that polarity alters the reaction and may also affect interactions between other metals and group III-nitride semiconductors.
Show PACS
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
61.72.Cc Kinetics of defect formation and annealing
82.30.Cf Atom and radical reactions; chain reactions; molecule-molecule reactions

Intrinsic bandgap of cleaved ZnO(11math0) surfaces

A. Sabitova, Ph. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R. E. Dunin-Borkowski, A. Förster, B. Grandidier, and H. Eisele

Appl. Phys. Lett. 102, 021608 (2013); http://dx.doi.org/10.1063/1.4776674 (4 pages)

Online Publication Date: 18 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The existence of intrinsic surface states, the position of the Fermi level, and the size of the surface bandgap of the non-polar ZnO(11math0) cleavage surfaces were investigated by scanning tunneling microscopy and spectroscopy. The comparison of spectroscopic measurements performed on atomically flat and stepped surfaces reveals the absence of intrinsic surface states within the fundamental bulk bandgap, but shows the occurrence of step-induced gap states. These states lead to a pinning of the Fermi level at the surface within the bandgap and generate a significant defect-related tunnel current, narrowing the measured apparent bandgap.
Show PACS
73.20.At Surface states, band structure, electron density of states
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.20.Nr Semiconductor compounds
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close