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21 Jan 2013

Volume 102, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 033901 (2013); http://dx.doi.org/10.1063/1.4758300 (5 pages)

Marina S. Leite, Robyn L. Woo, Jeremy N. Munday, William D. Hong, Shoghig Mesropian, Daniel C. Law, and Harry A. Atwater
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Stochastic nonlinear electrical characteristics of graphene

Young Jun Shin, Kalon Gopinadhan, Kulothungasagaran Narayanapillai, Alan Kalitsov, Charanjit S. Bhatia, and Hyunsoo Yang

Appl. Phys. Lett. 102, 033101 (2013); http://dx.doi.org/10.1063/1.4788737 (5 pages)

Online Publication Date: 22 January 2013

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A stochastic nonlinear electrical characteristic of graphene is reported. Abrupt current changes are observed from voltage sweeps between the source and drain with an on/off ratio up to 103. It is found that graphene channel experiences the topological change. Active radicals in an uneven graphene channel cause local changes of electrostatic potential. Simulation results based on the self-trapped electron and hole mechanism account well for the experimental data. Our findings illustrate an important issue of reliable electron transports and help for the understanding of transport properties in graphene devices.
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73.63.-b Electronic transport in nanoscale materials and structures
72.20.Fr Low-field transport and mobility; piezoresistance

Electron field emission from reduced graphene oxide on polymer film

I. Sameera, Ravi Bhatia, Jianyong Ouyang, V. Prasad, and R. Menon

Appl. Phys. Lett. 102, 033102 (2013); http://dx.doi.org/10.1063/1.4788738 (5 pages)

Online Publication Date: 22 January 2013

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Field emission of reduced graphene oxide coated on polystyrene film is studied in both parallel and perpendicular configurations. Low turn-on field of 0.6 V/μm and high emission current density of 200 mA/cm2 are observed in perpendicular configuration (along the cross section), whereas a turn-on field of 6 V/μm and current density of 20 μA/cm2 are obtained in parallel configuration (top surface). The emission characteristics follow Fowler–Nordheim (FN) tunneling and the values of enhancement factor estimated from FN plots are 5818 (perpendicular) and 741 (parallel). Furthermore, stability and repeatability of the field emission characteristics in perpendicular configuration are presented.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Gk Tunneling

Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study

Yun Chang Park, Young Heon Kim, Ho-Hyun Nahm, Ji-Young Noh, Yong-Sung Kim, Joondong Kim, Won Seok Lee, Jun-Mo Yang, and Jeonghee Park

Appl. Phys. Lett. 102, 033103 (2013); http://dx.doi.org/10.1063/1.4788812 (5 pages)

Online Publication Date: 22 January 2013

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An inversion domain boundary (IDB) related to an interstitial stacking layer (ISL) was observed on the {0002} planes of the wurtzite (WZ) structure of tin (Sn)-doped ZnO nanobelts. Quantitative STEM analysis confirmed that the ISL was composed of Sn element. Oxygen related to the ISL was in a triangular coordination as determined by analyzing the electron energy-loss spectra. Expansion of the interplanar spacing along the c-axis of a WZ structure was observed near the IDB while that along the a-axis was constrained. Density functional theory calculations were carried out to elucidate the origin of microstructural evolution.
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81.16.-c Methods of micro- and nanofabrication and processing
61.72.jj Interstitials
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
79.20.Uv Electron energy loss spectroscopy

Effect of grain boundaries on thermal transport in graphene

Andrey Y. Serov, Zhun-Yong Ong, and Eric Pop

Appl. Phys. Lett. 102, 033104 (2013); http://dx.doi.org/10.1063/1.4776667 (5 pages) | Cited 2 times

Online Publication Date: 23 January 2013

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We investigate the influence of grain boundaries (GBs), line defects (LDs), and chirality on thermal transport in graphene using non-equilibrium Green's functions. At room temperature, the ballistic thermal conductance is ∼4.2 GW m−2 K−1, and single GBs or LDs yield transmission from 50% to 80% of this value. LDs with carbon atom octagon defects have lower thermal transmission than that of GBs with pentagon and heptagon defects. We apply our findings to study the thermal conductivity of polycrystalline graphene for practical applications, and find that the type and size of GBs play an important role when grain sizes are smaller than a few hundred nanometers.
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61.72.Mm Grain and twin boundaries
66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.

Spin injection properties in trilayer graphene lateral spin valves

Y. P. Liu, H. Idzuchi, Y. Fukuma, O. Rousseau, Y. Otani, and W. S. Lew

Appl. Phys. Lett. 102, 033105 (2013); http://dx.doi.org/10.1063/1.4776699 (4 pages) | Cited 2 times

Online Publication Date: 23 January 2013

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We report on the electrical injection and detection of spin accumulation in trilayer-graphene/MgO/Permalloy lateral spin-valve (LSV) structure. Non-local spin valve signal is clearly observed in the LSV, indicating that spin coherence extends underneath all ferromagnetic contacts. We also show that low-resistivity graphene/MgO/Py junctions enable efficient spin injection and detection in LSV with high applied current density, which leads to large spin accumulation of 120 μV at room temperature. A spin diffusion length of 1.5 μm was obtained for the injector-detector separation dependence of spin valve signal measurements carried out at room temperature, while at T = 10 K, the diffusion length increases to 2.3 μm.
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72.25.Mk Spin transport through interfaces
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
75.50.Bb Fe and its alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.76.+j Spin transport effects

The plasmonic J-pole antenna

T. D. James, Z. Q. Teo, D. E. Gómez, T. J. Davis, and A. Roberts

Appl. Phys. Lett. 102, 033106 (2013); http://dx.doi.org/10.1063/1.4775382 (4 pages)

Online Publication Date: 23 January 2013

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The plasmonic J-pole antenna is the nanoscale version of a radio frequency design, consisting of a half wavelength arm connected to a quarter wavelength feed pair. Here, we report on an optical J-pole antenna that displays both a dipole (1015 nm) and quadrupole resonance (653 nm). The excitation of the quadrupole resonance is optimum at an angle of incidence directly related to the geometry of the antenna, demonstrating the flexibility of the design. The J-pole antenna shows great promise for enhancing and shaping the angular emission pattern of quantum emitters.
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42.79.-e Optical elements, devices, and systems
42.82.-m Integrated optics

Probing into the metal-graphene interface by electron transport measurements

Yen-Fu Lin, Sheng-Tsung Wang, Chia-Chen Pao, Ya-Chi Li, Cheng-Chieh Lai, Chung-Kuan Lin, Shih-Ying Hsu, and Wen-Bin Jian

Appl. Phys. Lett. 102, 033107 (2013); http://dx.doi.org/10.1063/1.4789554 (4 pages) | Cited 1 time

Online Publication Date: 24 January 2013

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Metal-graphene contact recently attracts much attention because of its effects on the performance and the operational speed of graphene field-effect transistor. Simple two-probe graphene devices on mechanically exfoliated graphene flakes are fabricated and the temperature behavior of resistance is measured from room temperature down to liquid helium temperature for the study of electron transport in the interface. Comparing experimental data with several different transport theories, it is confirmed that the model of fluctuation-induced tunneling conduction describes precisely the electron transport and indicates the existence of a thin insulating layer in the metal-graphene interface. Through the interface probing by electron transport measurements, the way to reduce the contact resistance is suggested.
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85.65.+h Molecular electronic devices
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
73.40.Gk Tunneling

Size-controlled growth of nanoparticles in a highly ionized pulsed plasma

I. Pilch, D. Söderström, N. Brenning, and U. Helmersson

Appl. Phys. Lett. 102, 033108 (2013); http://dx.doi.org/10.1063/1.4788739 (4 pages)

Online Publication Date: 24 January 2013

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Copper nanoparticles (NPs) were synthesized using a high power pulsed hollow cathode technique and the produced NPs were studied as a function of pulse parameters, i.e., frequency, peak current, and pulse width. It was found that the particle size can be altered in a range from 10 to 40 nm by changing any one of the pulse parameters. The mechanisms of NP synthesis with respect to a pulsed discharge and a high degree of ionization of the sputtered material are discussed.
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81.16.-c Methods of micro- and nanofabrication and processing
52.77.-j Plasma applications
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

Surface enhanced Raman scattering effect of CdSe/ZnS quantum dots hybridized with Au nanowire

Yong-baek Lee, Seok Ho Lee, Sunmi Lee, Hyunsoo Lee, Jeongyong Kim, and Jinsoo Joo

Appl. Phys. Lett. 102, 033109 (2013); http://dx.doi.org/10.1063/1.4788926 (4 pages)

Online Publication Date: 24 January 2013

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Functionalized CdSe/ZnS quantum dots (QDs) were attached to the surface of Au nanowire (NW). Analysis of optical absorption spectra disclosed surface plasmon bands of Au NWs at 562 and 627 nm and showing an overlap with the QD absorption band. Micro Raman spectra (λex = 514 nm) of the QDs/Au single NW exhibited surface enhanced Raman scattering (SERS) peaks at 180, 205, and 277 cm−1, corresponding to surface, longitudinal, and transverse optical phonon modes, respectively. From time-resolved fluorescence spectra, the exciton lifetime of QDs decreased after hybridization with Au NW due to the energy transfer, supporting the SERS effect.
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78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
78.55.Et II-VI semiconductors
78.67.Hc Quantum dots
81.07.Ta Quantum dots
73.21.La Quantum dots

Detecting the local transport properties and the dimensionality of transport of epitaxial graphene by a multi-point probe approach

Lucas Barreto, Edward Perkins, Jens Johannsen, Søren Ulstrup, Felix Fromm, Christian Raidel, Thomas Seyller, and Philip Hofmann

Appl. Phys. Lett. 102, 033110 (2013); http://dx.doi.org/10.1063/1.4789508 (3 pages) | Cited 1 time

Online Publication Date: 25 January 2013

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The electronic transport properties of epitaxial monolayer graphene (MLG) and hydrogen-intercalated quasi free-standing bilayer graphene (QFBLG) on SiC(0001) are investigated by micro multi-point probes. Using a probe with 12 contacts, we perform four-point probe measurements with the possibility to effectively vary the contact spacing over more than one order of magnitude, allowing us to establish that the transport is purely two-dimensional. Combined with the carrier density obtained by angle-resolved photoemission spectroscopy, we find the room temperature mobility of MLG to be (870±120) cm2/V s. The transport in QFBLG is also found to be two-dimensional with a mobility of (1600±160) cm2/V s.
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72.20.Fr Low-field transport and mobility; piezoresistance
79.60.Bm Clean metal, semiconductor, and insulator surfaces
72.80.Vp Electronic transport in graphene

Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique

W. Lei, H. H. Tan, and C. Jagadish

Appl. Phys. Lett. 102, 033111 (2013); http://dx.doi.org/10.1063/1.4789513 (4 pages)

Online Publication Date: 25 January 2013

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Graded growth technique is utilized to realize the control over the composition, morphology, and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures. By increasing the initial mole fraction of the Sb precursor during the graded growth of InAsSb, more Sb atoms can be incorporated into the InAsSb nanostructures despite the same Sb mole fraction averaged over the graded growth. This leads to a shape change from dots to dashes/wires for the InAsSb nanostructures. As a result of the composition and morphology change, photoluminescence from the InAsSb nanostructures shows different polarization and temperature characteristics. This work demonstrates a technologically important technique—graded growth, to control the growth and the resultant physical properties of self-assembled semiconductor nanostructures.
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81.05.Ea III-V semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
61.46.-w Structure of nanoscale materials

Asymmetry of localised states in a single quantum ring: Polarization dependence of excitons and biexcitons

H. D. Kim, K. Kyhm, R. A. Taylor, G. Nogues, K. C. Je, E. H. Lee, and J. D. Song

Appl. Phys. Lett. 102, 033112 (2013); http://dx.doi.org/10.1063/1.4789519 (4 pages)

Online Publication Date: 25 January 2013

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We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy difference ( ∼ 0.8 meV) in the exciton emission energy for perpendicular polarizations was observed and the oscillator strengths were also compared using the photoluminescence decay rate. For perpendicular polarizations, the biexciton exhibits twice the energy difference seen for the exciton, a fact that may be attributed to a possible change in the selection rules for the lowered symmetry.
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78.67.De Quantum wells
71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors

Edge-induced flattening in the fabrication of ultrathin freestanding crystalline silicon sheets

Gokul Gopalakrishnan, David A. Czaplewski, Kyle M. McElhinny, Martin V. Holt, Juan C. Silva-Martínez, and Paul G. Evans

Appl. Phys. Lett. 102, 033113 (2013); http://dx.doi.org/10.1063/1.4789553 (4 pages)

Online Publication Date: 25 January 2013

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Silicon nanomembranes are suspended single-crystal sheets of silicon, tens of nanometers thick, with areas in the thousands of square micrometers. Challenges in fabrication arise from buckling due to strains of over 10−3 in the silicon-on-insulator starting material. In equilibrium, the distortion is distributed across the entire membrane, minimizing the elastic energy with a large radius of curvature. We show that flat nanomembranes can be created using an elastically metastable configuration driven by the silicon-water surface energy. Membranes as thin as 6 nm are fabricated with vertical deviations below 10 nm in a central 100 μm × 100 μm area.
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81.07.Bc Nanocrystalline materials
81.40.Lm Deformation, plasticity, and creep
61.46.Hk Nanocrystals
62.20.mq Buckling
81.05.Cy Elemental semiconductors
68.35.Md Surface thermodynamics, surface energies
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