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28 Jan 2013

Volume 102, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 041101 (2013); http://dx.doi.org/10.1063/1.4777564 (5 pages)

K. Winkler, C. Schneider, J. Fischer, A. Rahimi-Iman, M. Amthor, A. Forchel, S. Reitzenstein, S. Höfling, and M. Kamp
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Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function

Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wan

Appl. Phys. Lett. 102, 043501 (2013); http://dx.doi.org/10.1063/1.4789515 (4 pages)

Online Publication Date: 28 January 2013

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Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.
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85.30.Tv Field effect devices
42.62.Cf Industrial applications

Demonstration and modeling of multi-bit resistance random access memory

Xiang Yang, Albert B. K. Chen, Byung Joon Choi, and I-Wei Chen

Appl. Phys. Lett. 102, 043502 (2013); http://dx.doi.org/10.1063/1.4790158 (4 pages)

Online Publication Date: 29 January 2013

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Although intermediates resistance states are common in resistance random access memory (RRAM), two-way switching among them has not been demonstrated. Using a nanometallic bipolar RRAM, we have illustrated a general scheme for writing/rewriting multi-bit memory using voltage pulses. Stability conditions for accessing intermediate states have also been determined in terms of a state distribution function and the weight of serial load resistance. A multi-bit memory is shown to realize considerable space saving at a modest decrease of switching speed.
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84.30.Sk Pulse and digital circuits

All solution processed, nanowire enhanced ultraviolet photodetectors

Aysegul Afal, Sahin Coskun, and Husnu Emrah Unalan

Appl. Phys. Lett. 102, 043503 (2013); http://dx.doi.org/10.1063/1.4789757 (5 pages)

Online Publication Date: 29 January 2013

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We report on the fabrication and characterization of transparent and fully solution processed, nanowire based ultraviolet (UV) photodetectors with high responsivity. For this purpose, UV sensitive zinc oxide (ZnO) nanowires were grown hydrothermally on transparent electrodes formed by spray coated network of silver (Ag) nanowires. Fabricated UV photodetectors showed short recovery time, around 4 s, with a decent on/off ratio of 2600. Effect of in-situ annealing and nanowire length was investigated. Our design provides a simple and cost effective approach for the fabrication of high performance UV photodetectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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Analysis of perturbations in the lateral far-field of blue InGaN laser diodes

F. Kopp, A. Lell, C. Eichler, U. T. Schwarz, and U. Strauss

Appl. Phys. Lett. 102, 043504 (2013); http://dx.doi.org/10.1063/1.4789976 (4 pages)

Online Publication Date: 29 January 2013

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The origin of perturbations in the Gaussian-shaped lateral far-field of blue InGaN laser diodes is explored. Near-field measurements reveal that small stray light intensity peaks beside the ridge waveguide exist. In order to prove quantitatively the impact of this stray light on the far field, an exemplary beam propagation method simulation is performed. Moreover, laser cuts as a chip technological process to block stray light from the out-couple facet are presented. These laser cuts result in a significant improvement of the lateral far-field.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering

Yuechan Kong, Jianjun Zhou, Cen Kong, Xun Dong, Youtao Zhang, Haiyan Lu, and Tangsheng Chen

Appl. Phys. Lett. 102, 043505 (2013); http://dx.doi.org/10.1063/1.4789868 (3 pages)

Online Publication Date: 30 January 2013

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Monolithic integrated enhancement/depletion (E/D)-mode AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on an AlGaN/GaN heterostructure with an engineered triple-cap-layer. The energy band of the cap layer is greatly tailored by the polarizations within it, which improves the controllability of D-to-E mode conversion with gate recess. The uniformity of the threshold voltage (Vth) across a 3″ wafer is assessed and the standard deviations of Vth are 0.1 V and 0.14 V for E-mode and D-mode devices, respectively. Direct-coupled field-effect transistor logic E/D HEMT inverter and 17-stage ring oscillator are demonstrated, and the latter shows a oscillation frequency of 201 MHz at a supply voltage of 1 V, corresponding to a propagation delay of 146 ps/stage and a power-delay product of 1.96 pJ/stage.
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85.30.Tv Field effect devices
84.30.Ng Oscillators, pulse generators, and function generators

Improvement in carrier transport properties by mild thermal annealing of PbS quantum dot solar cells

Jianbo Gao, Sohee Jeong, Feng Lin, Peter T. Erslev, Octavi E. Semonin, Joseph M. Luther, and Matthew C. Beard

Appl. Phys. Lett. 102, 043506 (2013); http://dx.doi.org/10.1063/1.4789434 (5 pages)

Online Publication Date: 31 January 2013

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We studied the effect of post-deposition thermal annealing in the preparation of PbS quantum dot (QD) solar cells. We find an optimal annealing temperature that improves the power conversion efficiency by a factor of 1.5 for different sized QDs with bandgaps of 1.65 and 1.27 eV. We examined the onset of the photocurrent response and correlated that with domain grain growth and find that annealing the PbS QD array at 120 °C causes little change in the PbS QD size, bandgap, and open-circuit voltage and yet leads to an increase in the carrier transport as realized by an improved current response. We also find a decrease in the activation energy of a shallow trap, which also likely contributes to the improvement in the solar cell efficiency.
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88.40.jm Thin film III-V and II-VI based solar cells
88.40.hj Efficiency and performance of solar cells
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.40.Gh Other heat and thermomechanical treatments

Low attenuation of GHz Rayleigh-like surface acoustic waves in ZnO/GaAs systems immersed in liquid helium

J. Pedrós, L. García-Gancedo, C. J. B. Ford, J. P. Griffiths, G. A. C. Jones, and A. J. Flewitt

Appl. Phys. Lett. 102, 043507 (2013); http://dx.doi.org/10.1063/1.4789973 (4 pages)

Online Publication Date: 31 January 2013

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Low attenuation of Sezawa modes operating at GHz frequencies in ZnO/GaAs systems immersed in liquid helium has been observed. This unexpected behaviour for Rayleigh-like surface acoustic waves (SAWs) is explained in terms of the calculated depth profiles of their acoustic Poynting vectors. This analysis allows reproduction of the experimental dispersion of the attenuation coefficient. In addition, the high attenuation of the Rayleigh mode is compensated by the strengthening provided by the ZnO layer. The introduction of the ZnO film will enable the operation of SAW-driven single-photon sources in GaAs-based systems with the best thermal stability provided by the liquid helium bath.
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68.35.Iv Acoustical properties
62.65.+k Acoustical properties of solids
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Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory

Yu-Ting Chen, Ting-Chang Chang, Jheng-Jie Huang, Hsueh-Chih Tseng, Po-Chun Yang, Ann-Kuo Chu, Jyun-Bao Yang, Hui-Chun Huang, Der-Shin Gan, Ming-Jinn Tsai, and Simon M. Sze

Appl. Phys. Lett. 102, 043508 (2013); http://dx.doi.org/10.1063/1.4790277 (4 pages)

Online Publication Date: 1 February 2013

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This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2.
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84.30.Sk Pulse and digital circuits
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